119 related articles for article (PubMed ID: 38061057)
41. Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating.
Si M; Andler J; Lyu X; Niu C; Datta S; Agrawal R; Ye PD
ACS Nano; 2020 Sep; 14(9):11542-11547. PubMed ID: 32833445
[TBL] [Abstract][Full Text] [Related]
42. All-2D ReS
Kwon J; Shin Y; Kwon H; Lee JY; Park H; Watanabe K; Taniguchi T; Kim J; Lee CH; Im S; Lee GH
Sci Rep; 2019 Jul; 9(1):10354. PubMed ID: 31316081
[TBL] [Abstract][Full Text] [Related]
43. Nanowire gate all around-TFET-based biosensor by considering ambipolar transport.
Reddy NN; Panda DK
Appl Phys A Mater Sci Process; 2021; 127(9):682. PubMed ID: 34429569
[TBL] [Abstract][Full Text] [Related]
44. High-Density Vertical Transistors with Pitch Size Down to 20 nm.
Xiao Z; Liu L; Chen Y; Lu Z; Yang X; Gong Z; Li W; Kong L; Ding S; Li Z; Lu D; Ma L; Liu S; Liu X; Liu Y
Adv Sci (Weinh); 2023 Oct; 10(29):e2302760. PubMed ID: 37552811
[TBL] [Abstract][Full Text] [Related]
45. A Review of Reliability in Gate-All-Around Nanosheet Devices.
Wang M
Micromachines (Basel); 2024 Feb; 15(2):. PubMed ID: 38398997
[TBL] [Abstract][Full Text] [Related]
46. Sub-5 nm Gate-Length Monolayer Selenene Transistors.
Li Q; Tan X; Yang Y; Xiong X; Zhang T; Weng Z
Molecules; 2023 Jul; 28(14):. PubMed ID: 37513262
[TBL] [Abstract][Full Text] [Related]
47. Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide.
Yao Z; Liu J; Xu K; Chow EKC; Zhu W
Sci Rep; 2018 Mar; 8(1):5221. PubMed ID: 29588469
[TBL] [Abstract][Full Text] [Related]
48. Nanoscale Vacuum Channel Transistor.
Han JW; Moon DI; Meyyappan M
Nano Lett; 2017 Apr; 17(4):2146-2151. PubMed ID: 28334531
[TBL] [Abstract][Full Text] [Related]
49. Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
Li J; Li Y; Zhou N; Xiong W; Wang G; Zhang Q; Du A; Gao J; Kong Z; Lin H; Xiang J; Li C; Yin X; Wang X; Yang H; Ma X; Han J; Zhang J; Hu T; Cao Z; Yang T; Li J; Yin H; Zhu H; Luo J; Wang W; Radamson HH
Nanomaterials (Basel); 2020 Apr; 10(4):. PubMed ID: 32326106
[TBL] [Abstract][Full Text] [Related]
50. Scaling of MoS
Tian J; Wang Q; Huang X; Tang J; Chu Y; Wang S; Shen C; Zhao Y; Li N; Liu J; Ji Y; Huang B; Peng Y; Yang R; Yang W; Watanabe K; Taniguchi T; Bai X; Shi D; Du L; Zhang G
Nano Lett; 2023 Apr; 23(7):2764-2770. PubMed ID: 37010357
[TBL] [Abstract][Full Text] [Related]
51. Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier.
Singh S; Solay LR; Anand S; Kumar N; Ranjan R; Singh A
Micromachines (Basel); 2023 Jun; 14(7):. PubMed ID: 37512666
[TBL] [Abstract][Full Text] [Related]
52. Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer.
Mondal A; Biswas C; Park S; Cha W; Kang SH; Yoon M; Choi SH; Kim KK; Lee YH
Nat Nanotechnol; 2024 Jan; 19(1):34-43. PubMed ID: 37666942
[TBL] [Abstract][Full Text] [Related]
53. Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around.
Guerfi Y; Larrieu G
Nanoscale Res Lett; 2016 Dec; 11(1):210. PubMed ID: 27094824
[TBL] [Abstract][Full Text] [Related]
54. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
Smith C; Qaisi R; Liu Z; Yu Q; Hussain MM
ACS Nano; 2013 Jul; 7(7):5818-23. PubMed ID: 23777434
[TBL] [Abstract][Full Text] [Related]
55. High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium-Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach.
Hur JS; Kim MJ; Yoon SH; Choi H; Park CK; Lee SH; Cho MH; Kuh BJ; Jeong JK
ACS Appl Mater Interfaces; 2022 Nov; 14(43):48857-48867. PubMed ID: 36259658
[TBL] [Abstract][Full Text] [Related]
56. Short channel monolayer MoS
Bi K; Liu H; Chen Y; Luo F; Shu Z; Lin J; Liu S; Liu H; Zeng Z; Dai P; Zhu M; Duan H
Nanotechnology; 2019 Jul; 30(29):295301. PubMed ID: 30917350
[TBL] [Abstract][Full Text] [Related]
57. Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual-Gate Antiambipolar Transistor.
Hayakawa R; Honma K; Nakaharai S; Kanai K; Wakayama Y
Adv Mater; 2022 Apr; 34(15):e2109491. PubMed ID: 35146811
[TBL] [Abstract][Full Text] [Related]
58. Damage-free mica/MoS
Zou X; Xu J; Liu L; Wang H; Lai PT; Tang WM
Nanotechnology; 2019 Aug; 30(34):345204. PubMed ID: 31067521
[TBL] [Abstract][Full Text] [Related]
59. Vertical Gate-All-Around Device Architecture to Improve the Device Performance for Sub-5-nm Technology.
Noh C; Han C; Won SM; Shin C
Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144174
[TBL] [Abstract][Full Text] [Related]
60. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.
Chuang HJ; Chamlagain B; Koehler M; Perera MM; Yan J; Mandrus D; Tománek D; Zhou Z
Nano Lett; 2016 Mar; 16(3):1896-902. PubMed ID: 26844954
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]