These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

135 related articles for article (PubMed ID: 38090095)

  • 1. Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing.
    Elboughdiri N; Iqbal S; Abdullaev S; Aljohani M; Safeen A; Althubeiti K; Khan R
    RSC Adv; 2023 Dec; 13(51):35993-36008. PubMed ID: 38090095
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Interface engineering in ZnO/CdO hybrid nanocomposites to enhanced resistive switching memory for neuromorphic computing.
    Ghafoor F; Kim H; Ghafoor B; Rehman S; Asghar Khan M; Aziz J; Rabeel M; Faheem Maqsood M; Dastgeer G; Lee MJ; Farooq Khan M; Kim DK
    J Colloid Interface Sci; 2024 Apr; 659():1-10. PubMed ID: 38157721
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Expression of concern: Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing.
    Elboughdiri N; Iqbal S; Abdullaev S; Aljohani M; Safeen A; Althubeiti K; Khan R
    RSC Adv; 2024 Sep; 14(39):28299. PubMed ID: 39239293
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.
    Mahata C; Ismail M; Kang M; Kim S
    Nanoscale Res Lett; 2022 Jun; 17(1):58. PubMed ID: 35687194
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.
    Zhao X; Li Y; Ai C; Wen D
    Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.
    Ismail M; Mahata C; Kang M; Kim S
    Nanoscale Res Lett; 2022 Jun; 17(1):61. PubMed ID: 35749003
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System.
    Oh I; Pyo J; Kim S
    Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35808021
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Sputtering-deposited amorphous SrVO
    Lee TJ; Kim SK; Seong TY
    Sci Rep; 2020 Apr; 10(1):5761. PubMed ID: 32238846
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Metal doped polyaniline as neuromorphic circuit elements for in-materia computing.
    Higuchi R; Lilak S; Sillin HO; Tsuruoka T; Kunitake M; Nakayama T; Gimzewski JK; Stieg AZ
    Sci Technol Adv Mater; 2023; 24(1):2178815. PubMed ID: 36872943
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High on-off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing.
    Sun Y; Yan X; Zheng X; Liu Y; Zhao Y; Shen Y; Liao Q; Zhang Y
    ACS Appl Mater Interfaces; 2015 Apr; 7(13):7382-8. PubMed ID: 25786156
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Hydrothermally grown ZnO nanowire array as an oxygen vacancies reservoir for improved resistive switching.
    Fra V; Beccaria M; Milano G; Guastella S; Bianco S; Porro S; Laurenti M; Stassi S; Ricciardi C
    Nanotechnology; 2020 Sep; 31(37):374001. PubMed ID: 32492668
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics.
    Choi HW; Song KW; Kim SH; Nguyen KT; Eadi SB; Kwon HM; Lee HD
    Sci Rep; 2022 Jan; 12(1):1259. PubMed ID: 35075173
    [TBL] [Abstract][Full Text] [Related]  

  • 13. 1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature.
    Li JC; Ma YX; Wu SH; Liu ZC; Ding PF; Dai D; Ding YT; Zhang YY; Huang Y; Lai PT; Wang YL
    ACS Appl Mater Interfaces; 2024 Apr; 16(14):17766-17777. PubMed ID: 38534058
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al
    Mahata C; Park J; Ismail M; Kim DH; Kim S
    Materials (Basel); 2022 Sep; 15(19):. PubMed ID: 36234005
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.
    Huang Y; Yu J; Kong Y; Wang X
    RSC Adv; 2022 Nov; 12(52):33634-33640. PubMed ID: 36505707
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures.
    Tominov RV; Vakulov ZE; Polupanov NV; Saenko AV; Avilov VI; Ageev OA; Smirnov VA
    Nanomaterials (Basel); 2022 Jan; 12(3):. PubMed ID: 35159799
    [TBL] [Abstract][Full Text] [Related]  

  • 17. A Novel Characterization and Performance Measurement of Memristor Devices for Synaptic Emulators in Advanced Neuro-Computing.
    Al-Shidaifat A; Chakrabartty S; Kumar S; Acharjee S; Song H
    Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31941084
    [TBL] [Abstract][Full Text] [Related]  

  • 18. ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications.
    Mundle R; Carvajal C; Pradhan AK
    Langmuir; 2016 May; 32(19):4983-95. PubMed ID: 27124366
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications.
    Simanjuntak FM; Ohno T; Chandrasekaran S; Tseng TY; Samukawa S
    Nanotechnology; 2020 Apr; 31(26):26LT01. PubMed ID: 32168495
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials.
    Li X; Jia J; Li Y; Bai Y; Li J; Shi Y; Wang L; Xu X
    Sci Rep; 2016 Sep; 6():31934. PubMed ID: 27585644
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.