These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

132 related articles for article (PubMed ID: 38112123)

  • 1. The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation.
    Liu S; Dong J; Ma Z; Hu W; Deng Y; Shi Y; Wang X; Qiu Y; Walther T
    J Microsc; 2024 Mar; 293(3):169-176. PubMed ID: 38112123
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Quantification of sample thickness and in-concentration of InGaAs quantum wells by transmission measurements in a scanning electron microscope.
    Volkenandt T; Müller E; Hu DZ; Schaadt DM; Gerthsen D
    Microsc Microanal; 2010 Oct; 16(5):604-13. PubMed ID: 20633317
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Atomic layer deposited Al
    Gurrentz JM; Jarvis KA; Gearba-Dolocan IR; Rose MJ
    Ultramicroscopy; 2022 Sep; 239():113562. PubMed ID: 35675735
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Systematic study of FIB-induced damage for the high-quality TEM sample preparation.
    Uzuhashi J; Ohkubo T
    Ultramicroscopy; 2024 Aug; 262():113980. PubMed ID: 38701660
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Low damage lamella preparation of metallic materials by FIB processing with low acceleration voltage and a low incident angle Ar ion milling finish.
    Sato T; Aizawa Y; Matsumoto H; Kiyohara M; Kamiya C; VON Cube F
    J Microsc; 2020 Sep; 279(3):234-241. PubMed ID: 32043578
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave.
    Walther T
    Nanomaterials (Basel); 2022 Oct; 12(21):. PubMed ID: 36364626
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images.
    Mehrtens T; Müller K; Schowalter M; Hu D; Schaadt DM; Rosenauer A
    Ultramicroscopy; 2013 Aug; 131():1-9. PubMed ID: 23666109
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of Ion Irradiation Introduced by Focused Ion-Beam Milling on the Mechanical Behaviour of Sub-Micron-Sized Samples.
    Liu J; Niu R; Gu J; Cabral M; Song M; Liao X
    Sci Rep; 2020 Jun; 10(1):10324. PubMed ID: 32587335
    [TBL] [Abstract][Full Text] [Related]  

  • 9. A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN.
    Jiang S; Ortalan V
    Nanomaterials (Basel); 2023 Nov; 13(21):. PubMed ID: 37947742
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Evaluation of neon focused ion beam milling for TEM sample preparation.
    Pekin TC; Allen FI; Minor AM
    J Microsc; 2016 Oct; 264(1):59-63. PubMed ID: 27172066
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Measuring Non-Destructively the Total Indium Content and Its Lateral Distribution in Very Thin Single Layers or Quantum Dots Deposited onto Gallium Arsenide Substrates Using Energy-Dispersive X-ray Spectroscopy in a Scanning Electron Microscope.
    Walther T
    Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35808054
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Direct investigation of (sub-) surface preparation artifacts in GaAs based materials by FIB sectioning.
    Belz J; Beyer A; Torunski T; Stolz W; Volz K
    Ultramicroscopy; 2016 Apr; 163():19-30. PubMed ID: 26855206
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode.
    Hamada H
    Materials (Basel); 2017 Jul; 10(8):. PubMed ID: 28773227
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Nanofabrication of cylindrical STEM specimen of InGaAs/GaAs quantum dots for 3D-STEM observation.
    Ozasa K; Aoyagi Y; Iwaki M; Hara M; Maeda M
    Ultramicroscopy; 2004 Nov; 101(2-4):55-61. PubMed ID: 15450652
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Comparing Xe
    Zhong X; Wade CA; Withers PJ; Zhou X; Cai C; Haigh SJ; Burke MG
    J Microsc; 2021 May; 282(2):101-112. PubMed ID: 33210738
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Improvements in performance of focused ion beam cross-sectioning: aspects of ion-sample interaction.
    Ishitani T; Umemura K; Ohnishi T; Yaguchi T; Kamino T
    J Electron Microsc (Tokyo); 2004; 53(5):443-9. PubMed ID: 15582945
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation.
    Grieb T; Tewes M; Schowalter M; Müller-Caspary K; Krause FF; Mehrtens T; Hartmann JM; Rosenauer A
    Ultramicroscopy; 2018 Jan; 184(Pt B):29-36. PubMed ID: 29078105
    [TBL] [Abstract][Full Text] [Related]  

  • 18. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.
    Heiss M; Ketterer B; Uccelli E; Morante JR; Arbiol J; Fontcuberta i Morral A
    Nanotechnology; 2011 May; 22(19):195601. PubMed ID: 21430322
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures.
    Sužiedėlis A; Ašmontas S; Gradauskas J; Čerškus A; Požela K; Anbinderis M
    Sensors (Basel); 2023 Jan; 23(3):. PubMed ID: 36772490
    [TBL] [Abstract][Full Text] [Related]  

  • 20. A technique for the preparation of cross-sectional TEM samples of ZnSe/GaAs heterostructures which eliminates process-induced defects.
    Yu JE; Jones KS; Park RM
    J Electron Microsc Tech; 1991 Jul; 18(3):315-24. PubMed ID: 1880604
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.