129 related articles for article (PubMed ID: 38138318)
1. Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance.
Shan C; Liu Y; Wang Y; Cai R; Su L
Micromachines (Basel); 2023 Nov; 14(12):. PubMed ID: 38138318
[TBL] [Abstract][Full Text] [Related]
2. In-Built N
Li J; Liu Y; Wei SF; Shan C
Micromachines (Basel); 2020 Oct; 11(11):. PubMed ID: 33120922
[TBL] [Abstract][Full Text] [Related]
3. Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET.
Shan C; Yang L; Liu Y; Liu ZM; Zheng H
Micromachines (Basel); 2023 Jan; 14(2):. PubMed ID: 36838002
[TBL] [Abstract][Full Text] [Related]
4. Study of a Gate-Engineered Vertical TFET with GaSb/GaAs
Xie H; Chen Y; Liu H; Guo D
Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33804142
[TBL] [Abstract][Full Text] [Related]
5. Performance Assessment of a Junctionless Heterostructure Tunnel FET Biosensor Using Dual Material Gate.
Xie H; Liu H
Micromachines (Basel); 2023 Mar; 14(4):. PubMed ID: 37421038
[TBL] [Abstract][Full Text] [Related]
6. Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor.
Chen S; Liu H; Wang S; Li W; Wang X; Zhao L
Nanoscale Res Lett; 2018 Oct; 13(1):321. PubMed ID: 30315380
[TBL] [Abstract][Full Text] [Related]
7. High performance tunnel field-effect transistor by gate and source engineering.
Huang R; Huang Q; Chen S; Wu C; Wang J; An X; Wang Y
Nanotechnology; 2014 Dec; 25(50):505201. PubMed ID: 25427134
[TBL] [Abstract][Full Text] [Related]
8. Electrical Characteristics of Ge/Si-Based Source Pocket Tunnel Field-Effect Transistors.
Ahn TJ; Yu YS
J Nanosci Nanotechnol; 2018 Sep; 18(9):5887-5892. PubMed ID: 29677711
[TBL] [Abstract][Full Text] [Related]
9. Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions.
Woo SY; Yoon YJ; Cho S; Lee JH; Kang IM
J Nanosci Nanotechnol; 2013 Dec; 13(12):8133-6. PubMed ID: 24266205
[TBL] [Abstract][Full Text] [Related]
10. Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.
Li W; Liu H; Wang S; Chen S; Yang Z
Nanoscale Res Lett; 2017 Dec; 12(1):198. PubMed ID: 28314362
[TBL] [Abstract][Full Text] [Related]
11. Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.
Lu H; Lu B; Zhang Y; Zhang Y; Lv Z
Nanomaterials (Basel); 2019 Feb; 9(2):. PubMed ID: 30717154
[TBL] [Abstract][Full Text] [Related]
12. Work-Function Engineering of Source-Overlapped Dual-Gate Tunnel Field-Effect Transistor.
Lee JC; Ahn TJ; Yu YS
J Nanosci Nanotechnol; 2018 Sep; 18(9):5925-5931. PubMed ID: 29677718
[TBL] [Abstract][Full Text] [Related]
13. Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection.
Tamersit K; Kouzou A; Rodriguez J; Abdelrahem M
Nanomaterials (Basel); 2024 Jan; 14(2):. PubMed ID: 38276738
[TBL] [Abstract][Full Text] [Related]
14. High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling.
Kim G; Lee J; Kim JH; Kim S
Micromachines (Basel); 2019 Jan; 10(2):. PubMed ID: 30678322
[TBL] [Abstract][Full Text] [Related]
15. A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor.
Vitale WA; Casu EA; Biswas A; Rosca T; Alper C; Krammer A; Luong GV; Zhao QT; Mantl S; Schüler A; Ionescu AM
Sci Rep; 2017 Mar; 7(1):355. PubMed ID: 28336970
[TBL] [Abstract][Full Text] [Related]
16. Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs.
Seo JH; Yoon YJ; Cho S; Kang IM; Lee JH
J Nanosci Nanotechnol; 2019 Oct; 19(10):6070-6076. PubMed ID: 31026910
[TBL] [Abstract][Full Text] [Related]
17. Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier.
Singh S; Solay LR; Anand S; Kumar N; Ranjan R; Singh A
Micromachines (Basel); 2023 Jun; 14(7):. PubMed ID: 37512666
[TBL] [Abstract][Full Text] [Related]
18. Effect of Curie Temperature on Ferroelectric Tunnel FET and Its RF/Analog Performance.
Das B; Bhowmick B
IEEE Trans Ultrason Ferroelectr Freq Control; 2021 Apr; 68(4):1437-1441. PubMed ID: 33104502
[TBL] [Abstract][Full Text] [Related]
19. Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor.
Kim JH; Kim HW; Song YS; Kim S; Kim G
Micromachines (Basel); 2020 Aug; 11(8):. PubMed ID: 32824238
[TBL] [Abstract][Full Text] [Related]
20. A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement.
Lin JT; Weng SC
Discov Nano; 2023 Jul; 18(1):96. PubMed ID: 37505432
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
