These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
136 related articles for article (PubMed ID: 38138381)
1. A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique. Wang B; Xu H; Ren N; Wang H; Huang K; Sheng K Micromachines (Basel); 2023 Dec; 14(12):. PubMed ID: 38138381 [TBL] [Abstract][Full Text] [Related]
2. Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed. Ou Y; Lan Z; Hu X; Liu D Micromachines (Basel); 2024 Feb; 15(2):. PubMed ID: 38398982 [TBL] [Abstract][Full Text] [Related]
3. A Novel 4H-SiC Asymmetric MOSFET with Step Trench. Lan Z; Ou Y; Hu X; Liu D Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930694 [TBL] [Abstract][Full Text] [Related]
4. SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode. Deng X; Liu R; Li S; Li L; Wu H; Li X Materials (Basel); 2021 Nov; 14(22):. PubMed ID: 34832495 [TBL] [Abstract][Full Text] [Related]
5. A Novel Asymmetric Trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance. Yu Y; Cheng Z; Hu Y; Lv R; Hu S Micromachines (Basel); 2024 Mar; 15(4):. PubMed ID: 38675272 [TBL] [Abstract][Full Text] [Related]
6. A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness. Yin S; Cao W; Hu X; Ge X; Liu D Micromachines (Basel); 2023 Oct; 14(10):. PubMed ID: 37893399 [TBL] [Abstract][Full Text] [Related]
7. A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics. Wu H; Li X; Deng X; Wu Y; Ding J; Peng W; Zhang B Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258211 [TBL] [Abstract][Full Text] [Related]
8. SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss. Ran S; Huang Z; Hu S; Yang H Micromachines (Basel); 2022 Feb; 13(2):. PubMed ID: 35208372 [TBL] [Abstract][Full Text] [Related]
9. A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance. Wu L; Zhang M; Liang J; Liu M; Zhang T; Yang G Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241684 [TBL] [Abstract][Full Text] [Related]
10. Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example. Wei Z; Fu H; Yan X; Li S; Zhang L; Wei J; Liu S; Sun W; Wu W; Bai S Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057175 [TBL] [Abstract][Full Text] [Related]
11. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics. Na J; Cheon J; Kim K Materials (Basel); 2021 Jun; 14(13):. PubMed ID: 34202093 [TBL] [Abstract][Full Text] [Related]
12. A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance. Ma R; Wang R; Fang H; Li P; Zhao L; Wu H; Huang Z; Tao J; Hu S Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930654 [TBL] [Abstract][Full Text] [Related]
13. A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching. Li P; Guo J; Hu S; Lin Z Micromachines (Basel); 2023 Jun; 14(7):. PubMed ID: 37512592 [TBL] [Abstract][Full Text] [Related]
14. A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode. Cao X; Liu J; An Y; Ren X; Yin Z Micromachines (Basel); 2024 Jul; 15(7):. PubMed ID: 39064444 [TBL] [Abstract][Full Text] [Related]
15. TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode. Wang R; Guo J; Liu C; Wu H; Huang Z; Hu S Micromachines (Basel); 2022 Oct; 13(10):. PubMed ID: 36296094 [TBL] [Abstract][Full Text] [Related]
16. Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions. Zou Y; Wang J; Xu H; Wang H Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057316 [TBL] [Abstract][Full Text] [Related]
17. Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET. Li H; Yu R; Zhong Y; Yao R; Liao X; Chen X Micromachines (Basel); 2019 May; 10(5):. PubMed ID: 31083371 [TBL] [Abstract][Full Text] [Related]
18. A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures. Liu L; Guo J; Shi Y; Zeng K; Li G Micromachines (Basel); 2024 Jun; 15(6):. PubMed ID: 38930742 [TBL] [Abstract][Full Text] [Related]
19. A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET. Nie X; Wang Y; Yu C; Fei X; Yang J; Li X Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258154 [TBL] [Abstract][Full Text] [Related]
20. 150-200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers. Chien FT; Wang ZZ; Lin CL; Kang TK; Chen CW; Chiu HC Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32429285 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]