These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
144 related articles for article (PubMed ID: 38138817)
21. Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses. Bronnikov K; Dostovalov A; Cherepakhin A; Mitsai E; Nepomniaschiy A; Kulinich SA; Zhizhchenko A; Kuchmizhak A Materials (Basel); 2020 Nov; 13(22):. PubMed ID: 33238502 [TBL] [Abstract][Full Text] [Related]
22. Atomically Thin Delta-Doping of Self-Assembled Molecular Monolayers by Flash Lamp Annealing for Si-Based Deep UV Photodiodes. Chang S; He J; Prucnal S; Zhang J; Zhang J; Zhou S; Helm M; Dan Y ACS Appl Mater Interfaces; 2022 Jul; 14(26):30000-30006. PubMed ID: 35666627 [TBL] [Abstract][Full Text] [Related]
23. Fundamental research on semiconductor SiC and its applications to power electronics. Matsunami H Proc Jpn Acad Ser B Phys Biol Sci; 2020; 96(7):235-254. PubMed ID: 32788548 [TBL] [Abstract][Full Text] [Related]
24. Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers. Cao Y; Lu P; Zhang X; Xu J; Xu L; Chen K Nanoscale Res Lett; 2014; 9(1):634. PubMed ID: 25489285 [TBL] [Abstract][Full Text] [Related]
25. 4H-SiC surface morphology after Al ion implantation and annealing with C-cap. Canino M; Fedeli P; Albonetti C; Nipoti R J Microsc; 2020 Dec; 280(3):229-240. PubMed ID: 32495384 [TBL] [Abstract][Full Text] [Related]
26. Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide. Schöler M; Brecht C; Wellmann PJ Materials (Basel); 2019 Aug; 12(15):. PubMed ID: 31390722 [TBL] [Abstract][Full Text] [Related]
27. Fabrication and characterization of silicon quantum dots in Si-rich silicon carbide films. Chang GR; Ma F; Ma D; Xu K J Nanosci Nanotechnol; 2011 Dec; 11(12):10824-8. PubMed ID: 22409005 [TBL] [Abstract][Full Text] [Related]
28. Evolution of the Microstructure and Mechanical Performance of As-Sprayed and Annealed Silicon Coating on Melt-Infiltrated Silicon Carbide Composites. Guo M; Cui Y; Wang C; Jiao J; Bi X; Tao C Materials (Basel); 2023 Jun; 16(12):. PubMed ID: 37374589 [TBL] [Abstract][Full Text] [Related]
29. Materials and Processes for Schottky Contacts on Silicon Carbide. Vivona M; Giannazzo F; Roccaforte F Materials (Basel); 2021 Dec; 15(1):. PubMed ID: 35009445 [TBL] [Abstract][Full Text] [Related]
30. Design and Fabrication of Bulk Micromachined 4H-SiC Piezoresistive Pressure Chips Based on Femtosecond Laser Technology. Wang L; Zhao Y; Zhao Y; Yang Y; Gong T; Hao L; Ren W Micromachines (Basel); 2021 Jan; 12(1):. PubMed ID: 33418919 [TBL] [Abstract][Full Text] [Related]
31. In situ TEM near-field optical probing of nanoscale silicon crystallization. Xiang B; Hwang DJ; In JB; Ryu SG; Yoo JH; Dubon O; Minor AM; Grigoropoulos CP Nano Lett; 2012 May; 12(5):2524-9. PubMed ID: 22471760 [TBL] [Abstract][Full Text] [Related]
32. Nano-scale depth-varying recrystallization of oblique Ar Gupta D; Umapathy GR; Singhal R; Ojha S; Aggarwal S Sci Rep; 2020 Jul; 10(1):11905. PubMed ID: 32681020 [TBL] [Abstract][Full Text] [Related]
34. Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers. Yang B; Wang H; Peng S; Cao Q Micromachines (Basel); 2022 Jun; 13(7):. PubMed ID: 35888828 [TBL] [Abstract][Full Text] [Related]
35. Recrystallization by annealing in SiC amorphized with Ne irradiation. Aihara J; Hojou K; Furuno S; Ishihara M; Hayashi K J Electron Microsc (Tokyo); 2002; 51(2):93-8. PubMed ID: 12005168 [TBL] [Abstract][Full Text] [Related]
36. Thermal and Mechanical Properties of Amorphous Silicon Carbide Thin Films Using the Femtosecond Pump-Probe Technique. Kim YY Materials (Basel); 2022 Mar; 15(6):. PubMed ID: 35329613 [TBL] [Abstract][Full Text] [Related]
37. Single-crystal cubic silicon carbide: an in vivo biocompatible semiconductor for brain machine interface devices. Frewin CL; Locke C; Saddow SE; Weeber EJ Annu Int Conf IEEE Eng Med Biol Soc; 2011; 2011():2957-60. PubMed ID: 22254961 [TBL] [Abstract][Full Text] [Related]
38. Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices. Lo Nigro R; Fiorenza P; Greco G; Schilirò E; Roccaforte F Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160775 [TBL] [Abstract][Full Text] [Related]
39. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment. Wang F; Zhang X; Wang L; Jiang Y; Wei C; Xu S; Zhao Y Phys Chem Chem Phys; 2014 Oct; 16(37):20202-8. PubMed ID: 25138166 [TBL] [Abstract][Full Text] [Related]
40. Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices. Shi X; Lu Y; Chaussende D; Rottwitt K; Ou H Materials (Basel); 2023 Mar; 16(6):. PubMed ID: 36984202 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]