180 related articles for article (PubMed ID: 38138834)
1. Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications.
Maimon O; Li Q
Materials (Basel); 2023 Dec; 16(24):. PubMed ID: 38138834
[TBL] [Abstract][Full Text] [Related]
2. State-of-the-Art β-Ga
Liu AC; Hsieh CH; Langpoklakpam C; Singh KJ; Lee WC; Hsiao YK; Horng RH; Kuo HC; Tu CC
ACS Omega; 2022 Oct; 7(41):36070-36091. PubMed ID: 36278089
[TBL] [Abstract][Full Text] [Related]
3. Ga
Chi Z; Asher JJ; Jennings MR; Chikoidze E; Pérez-Tomás A
Materials (Basel); 2022 Feb; 15(3):. PubMed ID: 35161108
[TBL] [Abstract][Full Text] [Related]
4. Ga
Song Y; Shoemaker D; Leach JH; McGray C; Huang HL; Bhattacharyya A; Zhang Y; Gonzalez-Valle CU; Hess T; Zhukovsky S; Ferri K; Lavelle RM; Perez C; Snyder DW; Maria JP; Ramos-Alvarado B; Wang X; Krishnamoorthy S; Hwang J; Foley BM; Choi S
ACS Appl Mater Interfaces; 2021 Sep; 13(34):40817-40829. PubMed ID: 34470105
[TBL] [Abstract][Full Text] [Related]
5. Ultra-Wide Band Gap Ga
Song Y; Bhattacharyya A; Karim A; Shoemaker D; Huang HL; Roy S; McGray C; Leach JH; Hwang J; Krishnamoorthy S; Choi S
ACS Appl Mater Interfaces; 2023 Feb; 15(5):7137-7147. PubMed ID: 36700621
[TBL] [Abstract][Full Text] [Related]
6. Recent Advances in β-Ga
Huan YW; Sun SM; Gu CJ; Liu WJ; Ding SJ; Yu HY; Xia CT; Zhang DW
Nanoscale Res Lett; 2018 Aug; 13(1):246. PubMed ID: 30136254
[TBL] [Abstract][Full Text] [Related]
7. 2D Amorphous GaO
Moon S; Lee D; Park J; Kim J
ACS Appl Mater Interfaces; 2023 Aug; 15(31):37687-37695. PubMed ID: 37498125
[TBL] [Abstract][Full Text] [Related]
8. Ultra-wide bandgap semiconductor Ga
Zhang J; Dong P; Dang K; Zhang Y; Yan Q; Xiang H; Su J; Liu Z; Si M; Gao J; Kong M; Zhou H; Hao Y
Nat Commun; 2022 Jul; 13(1):3900. PubMed ID: 35794123
[TBL] [Abstract][Full Text] [Related]
9. An Overview of the Ultrawide Bandgap Ga
Xue H; He Q; Jian G; Long S; Pang T; Liu M
Nanoscale Res Lett; 2018 Sep; 13(1):290. PubMed ID: 30232628
[TBL] [Abstract][Full Text] [Related]
10. Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga
Li XX; Sun Y; Zeng G; Li YC; Zhang R; Sai QL; Xia CT; Zhang DW; Yang YG; Lu HL
J Phys Chem Lett; 2022 Apr; 13(15):3377-3381. PubMed ID: 35404057
[TBL] [Abstract][Full Text] [Related]
11. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review.
Zhan T; Xu M; Cao Z; Zheng C; Kurita H; Narita F; Wu YJ; Xu Y; Wang H; Song M; Wang W; Zhou Y; Liu X; Shi Y; Jia Y; Guan S; Hanajiri T; Maekawa T; Okino A; Watanabe T
Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004933
[TBL] [Abstract][Full Text] [Related]
12. Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to β-Ga
Chen JX; Li XX; Ma HP; Huang W; Ji ZG; Xia C; Lu HL; Zhang DW
ACS Appl Mater Interfaces; 2019 Sep; 11(35):32127-32134. PubMed ID: 31403281
[TBL] [Abstract][Full Text] [Related]
13. Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications.
Ma CT; Gu ZH
Micromachines (Basel); 2021 Jan; 12(1):. PubMed ID: 33430093
[TBL] [Abstract][Full Text] [Related]
14. Thermal Conductivity of β-Phase Ga
Song Y; Ranga P; Zhang Y; Feng Z; Huang HL; Santia MD; Badescu SC; Gonzalez-Valle CU; Perez C; Ferri K; Lavelle RM; Snyder DW; Klein BA; Deitz J; Baca AG; Maria JP; Ramos-Alvarado B; Hwang J; Zhao H; Wang X; Krishnamoorthy S; Foley BM; Choi S
ACS Appl Mater Interfaces; 2021 Aug; 13(32):38477-38490. PubMed ID: 34370459
[TBL] [Abstract][Full Text] [Related]
15. Influence of High-Energy Proton Irradiation on β-Ga
Yang G; Jang S; Ren F; Pearton SJ; Kim J
ACS Appl Mater Interfaces; 2017 Nov; 9(46):40471-40476. PubMed ID: 29083157
[TBL] [Abstract][Full Text] [Related]
16. Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga
Kim J; Kim J
ACS Appl Mater Interfaces; 2020 Feb; 12(6):7310-7316. PubMed ID: 31898449
[TBL] [Abstract][Full Text] [Related]
17. Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition.
Rafie Borujeny E; Sendetskyi O; Fleischauer MD; Cadien KC
ACS Appl Mater Interfaces; 2020 Sep; 12(39):44225-44237. PubMed ID: 32865966
[TBL] [Abstract][Full Text] [Related]
18. Thermal Transport across Ion-Cut Monocrystalline β-Ga
Cheng Z; Mu F; You T; Xu W; Shi J; Liao ME; Wang Y; Huynh K; Suga T; Goorsky MS; Ou X; Graham S
ACS Appl Mater Interfaces; 2020 Oct; 12(40):44943-44951. PubMed ID: 32909730
[TBL] [Abstract][Full Text] [Related]
19. Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices.
Rafin SMSH; Ahmed R; Haque MA; Hossain MK; Haque MA; Mohammed OA
Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004900
[TBL] [Abstract][Full Text] [Related]
20. Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using AL
Gowthaman N; Srivastava VM
Recent Pat Nanotechnol; 2024; 18(3):374-385. PubMed ID: 37132315
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
