These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

131 related articles for article (PubMed ID: 38140956)

  • 1. Research Progress in Liquid Phase Growth of GaN Crystals.
    Sun D; Liu L; Wang G; Yu J; Li Q; Tian G; Wang B; Xu X; Zhang L; Wang S
    Chemistry; 2024 Mar; 30(17):e202303710. PubMed ID: 38140956
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production.
    Key D; Letts E; Tsou CW; Ji MH; Bakhtiary-Noodeh M; Detchprohm T; Shen SC; Dupuis R; Hashimoto T
    Materials (Basel); 2019 Jun; 12(12):. PubMed ID: 31207922
    [TBL] [Abstract][Full Text] [Related]  

  • 3. A GaN bulk crystal with improved structural quality grown by the ammonothermal method.
    Hashimoto T; Wu F; Speck JS; Nakamura S
    Nat Mater; 2007 Aug; 6(8):568-71. PubMed ID: 17603489
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Review of Recent Progress on Vertical GaN-Based PN Diodes.
    Pu T; Younis U; Chiu HC; Xu K; Kuo HC; Liu X
    Nanoscale Res Lett; 2021 Jun; 16(1):101. PubMed ID: 34097144
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.
    Zhang L; Li X; Shao Y; Yu J; Wu Y; Hao X; Yin Z; Dai Y; Tian Y; Huo Q; Shen Y; Hua Z; Zhang B
    ACS Appl Mater Interfaces; 2015 Mar; 7(8):4504-10. PubMed ID: 25665033
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model.
    Han P; Gao B; Song B; Yu Y; Tang X; Liu B
    Materials (Basel); 2022 Jun; 15(12):. PubMed ID: 35744193
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates.
    Chuang CW; Hong FC
    ACS Omega; 2022 Nov; 7(43):38289-38298. PubMed ID: 36340153
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review.
    Zhan T; Xu M; Cao Z; Zheng C; Kurita H; Narita F; Wu YJ; Xu Y; Wang H; Song M; Wang W; Zhou Y; Liu X; Shi Y; Jia Y; Guan S; Hanajiri T; Maekawa T; Okino A; Watanabe T
    Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004933
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Piezoelectricity in wide bandgap semiconductor 2D crystal GaN nanosheets.
    Wang Y; Wang S; Zhang Y; Cheng Z; Yang D; Wang Y; Wang T; Cheng L; Wu Y; Hao Y
    Nanoscale; 2024 Aug; 16(32):15170-15175. PubMed ID: 39052086
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Temperature dependent control of the solubility of gallium nitride in supercritical ammonia using mixed mineralizer.
    Tomida D; Kuroda K; Nakamura K; Qiao K; Yokoyama C
    Chem Cent J; 2018 Dec; 12(1):127. PubMed ID: 30511321
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Epitaxial growth and interfacial property of monolayer MoS
    Yan P; Tian Q; Yang G; Weng Y; Zhang Y; Wang J; Xie F; Lu N
    RSC Adv; 2018 Sep; 8(58):33193-33197. PubMed ID: 35548113
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential.
    Wostatek T; Chirala VYMR; Stoddard N; Civas EN; Pimputkar S; Schimmel S
    Materials (Basel); 2024 Jun; 17(13):. PubMed ID: 38998188
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride.
    Chen J; Zhao J; Feng S; Zhang L; Cheng Y; Liao H; Zheng Z; Chen X; Gao Z; Chen KJ; Hua M
    Adv Mater; 2023 Mar; 35(12):e2208960. PubMed ID: 36609822
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration.
    Hsu LH; Lai YY; Tu PT; Langpoklakpam C; Chang YT; Huang YW; Lee WC; Tzou AJ; Cheng YJ; Lin CH; Kuo HC; Chang EY
    Micromachines (Basel); 2021 Sep; 12(10):. PubMed ID: 34683210
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Vertical GaN MOSFET Power Devices.
    Langpoklakpam C; Liu AC; Hsiao YK; Lin CH; Kuo HC
    Micromachines (Basel); 2023 Oct; 14(10):. PubMed ID: 37893374
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition.
    Dhasiyan AK; Amalraj FW; Jayaprasad S; Shimizu N; Oda O; Ishikawa K; Hori M
    Sci Rep; 2024 May; 14(1):10861. PubMed ID: 38740895
    [TBL] [Abstract][Full Text] [Related]  

  • 17. High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN.
    Schimmel S; Salamon M; Tomida D; Neumeier S; Ishiguro T; Honda Y; Chichibu SF; Amano H
    Materials (Basel); 2022 Sep; 15(17):. PubMed ID: 36079544
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth.
    Utsumi W; Saitoh H; Kaneko H; Watanuki T; Aoki K; Shimomura O
    Nat Mater; 2003 Nov; 2(11):735-8. PubMed ID: 14578879
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
    Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
    [TBL] [Abstract][Full Text] [Related]  

  • 20. The Studies on Gallium Nitride-Based Materials: A Bibliometric Analysis.
    Lam WH; Lam WS; Lee PF
    Materials (Basel); 2023 Jan; 16(1):. PubMed ID: 36614740
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.