These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

107 related articles for article (PubMed ID: 38251961)

  • 1. Gradual degradation in InAs quantum dot lasers on Si and GaAs.
    Hughes ET; Shang C; Selvidge J; Jung D; Wan Y; Herrick RW; Bowers JE; Mukherjee K
    Nanoscale; 2024 Feb; 16(6):2966-2973. PubMed ID: 38251961
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
    Du Y; Wei W; Xu B; Wang G; Li B; Miao Y; Zhao X; Kong Z; Lin H; Yu J; Su J; Dong Y; Wang W; Ye T; Zhang J; Radamson HH
    Micromachines (Basel); 2022 Sep; 13(10):. PubMed ID: 36295932
    [TBL] [Abstract][Full Text] [Related]  

  • 3. InAs/GaAs quantum-dot lasers grown on on-axis Si (001) without dislocation filter layers.
    Wang Y; Ma B; Li J; Liu Z; Jiang C; Li C; Liu H; Zhang Y; Zhang Y; Wang Q; Xie X; Qiu X; Ren X; Wei X
    Opt Express; 2023 Jan; 31(3):4862-4872. PubMed ID: 36785443
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.
    Xu B; Wang G; Du Y; Miao Y; Li B; Zhao X; Lin H; Yu J; Su J; Dong Y; Ye T; Radamson HH
    Nanomaterials (Basel); 2022 Aug; 12(15):. PubMed ID: 35957135
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission.
    Kim Y; Chu RJ; Ryu G; Woo S; Lung QND; Ahn DH; Han JH; Choi WJ; Jung D
    ACS Appl Mater Interfaces; 2022 Oct; 14(39):45051-45058. PubMed ID: 36162121
    [TBL] [Abstract][Full Text] [Related]  

  • 6. All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).
    Kwoen J; Jang B; Lee J; Kageyama T; Watanabe K; Arakawa Y
    Opt Express; 2018 Apr; 26(9):11568-11576. PubMed ID: 29716075
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Red-emitting InP quantum dot micro-disk lasers epitaxially grown on (001) silicon.
    Luo W; Lin L; Huang J; Han Y; Lau KM
    Opt Lett; 2021 Sep; 46(18):4514-4517. PubMed ID: 34525035
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.
    Su XB; Ding Y; Ma B; Zhang KL; Chen ZS; Li JL; Cui XR; Xu YQ; Ni HQ; Niu ZC
    Nanoscale Res Lett; 2018 Feb; 13(1):59. PubMed ID: 29468483
    [TBL] [Abstract][Full Text] [Related]  

  • 9. High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001).
    Kwoen J; Jang B; Watanabe K; Arakawa Y
    Opt Express; 2019 Feb; 27(3):2681-2688. PubMed ID: 30732302
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon.
    Inoue D; Jung D; Norman J; Wan Y; Nishiyama N; Arai S; Gossard AC; Bowers JE
    Opt Express; 2018 Mar; 26(6):7022-7033. PubMed ID: 29609387
    [TBL] [Abstract][Full Text] [Related]  

  • 11. InAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration.
    Wei WQ; Feng Q; Guo JJ; Guo MC; Wang JH; Wang ZH; Wang T; Zhang JJ
    Opt Express; 2020 Aug; 28(18):26555-26563. PubMed ID: 32906927
    [TBL] [Abstract][Full Text] [Related]  

  • 12. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.
    Tang M; Chen S; Wu J; Jiang Q; Dorogan VG; Benamara M; Mazur YI; Salamo GJ; Seeds A; Liu H
    Opt Express; 2014 May; 22(10):11528-35. PubMed ID: 24921274
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Phosphorus-free 1.5  µm InAs quantum-dot microdisk lasers on metamorphic InGaAs/SOI platform.
    Wei WQ; Zhang JY; Wang JH; Cong H; Guo JJ; Wang ZH; Xu HX; Wang T; Zhang JJ
    Opt Lett; 2020 Apr; 45(7):2042-2045. PubMed ID: 32236063
    [TBL] [Abstract][Full Text] [Related]  

  • 14. InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods.
    Zhukov AE; Kryzhanovskaya NV; Moiseev EI; Dragunova AS; Tang M; Chen S; Liu H; Kulagina MM; Kadinskaya SA; Zubov FI; Mozharov AM; Maximov MV
    Materials (Basel); 2020 May; 13(10):. PubMed ID: 32443456
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 °C.
    Lv Z; Wang S; Wang S; Chai H; Meng L; Yang X; Yang T
    Opt Express; 2023 Jul; 31(15):24173-24182. PubMed ID: 37475250
    [TBL] [Abstract][Full Text] [Related]  

  • 16. InAs/GaAs quantum dot laser epitaxially grown on on-axis (001) GaAsOI substrate.
    Liang H; Jin T; Chi C; Sun J; Zhang X; You T; Zhou M; Lin J; Wang S
    Opt Express; 2021 Nov; 29(23):38465-38476. PubMed ID: 34808899
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.
    Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y
    Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Optically pumped 1.3  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.
    Wan Y; Li Q; Liu AY; Gossard AC; Bowers JE; Hu EL; Lau KM
    Opt Lett; 2016 Apr; 41(7):1664-7. PubMed ID: 27192313
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates.
    Wan Y; Zhang Z; Chao R; Norman J; Jung D; Shang C; Li Q; Kennedy MJ; Liang D; Zhang C; Shi JW; Gossard AC; Lau KM; Bowers JE
    Opt Express; 2017 Oct; 25(22):27715-27723. PubMed ID: 29092242
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Electrically pumped InP/GaAsP quantum dot lasers grown on (001) Si emitting at 750 nm.
    Luo W; Lin L; Huang J; Lin Q; Lau KM
    Opt Express; 2022 Oct; 30(22):40750-40755. PubMed ID: 36299004
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.