These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

141 related articles for article (PubMed ID: 38258154)

  • 1. A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET.
    Nie X; Wang Y; Yu C; Fei X; Yang J; Li X
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258154
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures.
    Liu L; Guo J; Shi Y; Zeng K; Li G
    Micromachines (Basel); 2024 Jun; 15(6):. PubMed ID: 38930742
    [TBL] [Abstract][Full Text] [Related]  

  • 3. A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance.
    Wu L; Zhang M; Liang J; Liu M; Zhang T; Yang G
    Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241684
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures.
    Chen CY; Lai YK; Lee KY; Huang CF; Huang SY
    Micromachines (Basel); 2021 Jun; 12(7):. PubMed ID: 34198997
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress.
    Marek J; Kozarik J; Minarik M; Chvála A; Matus M; Donoval M; Stuchlikova L; Weis M
    Materials (Basel); 2022 Nov; 15(22):. PubMed ID: 36431714
    [TBL] [Abstract][Full Text] [Related]  

  • 6. TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode.
    Wang R; Guo J; Liu C; Wu H; Huang Z; Hu S
    Micromachines (Basel); 2022 Oct; 13(10):. PubMed ID: 36296094
    [TBL] [Abstract][Full Text] [Related]  

  • 7. A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance.
    Ma R; Wang R; Fang H; Li P; Zhao L; Wu H; Huang Z; Tao J; Hu S
    Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930654
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Improved MRD 4H-SiC MESFET with High Power Added Efficiency.
    Zhu S; Jia H; Wang X; Liang Y; Tong Y; Li T; Yintang Y
    Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31319511
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET.
    Li H; Yu R; Zhong Y; Yao R; Liao X; Chen X
    Micromachines (Basel); 2019 May; 10(5):. PubMed ID: 31083371
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.
    Farhadi R; Farhadi B
    Electron Physician; 2014; 6(2):816-9. PubMed ID: 25763152
    [TBL] [Abstract][Full Text] [Related]  

  • 11. A Novel Asymmetric Trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance.
    Yu Y; Cheng Z; Hu Y; Lv R; Hu S
    Micromachines (Basel); 2024 Mar; 15(4):. PubMed ID: 38675272
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness.
    Yin S; Cao W; Hu X; Ge X; Liu D
    Micromachines (Basel); 2023 Oct; 14(10):. PubMed ID: 37893399
    [TBL] [Abstract][Full Text] [Related]  

  • 13. A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique.
    Wang B; Xu H; Ren N; Wang H; Huang K; Sheng K
    Micromachines (Basel); 2023 Dec; 14(12):. PubMed ID: 38138381
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example.
    Wei Z; Fu H; Yan X; Li S; Zhang L; Wei J; Liu S; Sun W; Wu W; Bai S
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057175
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors.
    Lee G; Ha J; Kim K; Bae H; Kim CE; Kim J
    Micromachines (Basel); 2022 Jun; 13(6):. PubMed ID: 35744515
    [TBL] [Abstract][Full Text] [Related]  

  • 16. A Novel 4H-SiC Asymmetric MOSFET with Step Trench.
    Lan Z; Ou Y; Hu X; Liu D
    Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930694
    [TBL] [Abstract][Full Text] [Related]  

  • 17. New Power MOSFET with Beyond-1D-Limit
    Zhang M; Li B; Wei J
    Materials (Basel); 2020 Jun; 13(11):. PubMed ID: 32516987
    [TBL] [Abstract][Full Text] [Related]  

  • 18. High-voltage SiC power devices for improved energy efficiency.
    Kimoto T
    Proc Jpn Acad Ser B Phys Biol Sci; 2022; 98(4):161-189. PubMed ID: 35400694
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Improved DRUS 4H-SiC MESFET with High Power Added Efficiency.
    Jia H; Liang Y; Li T; Tong Y; Zhu S; Wang X; Zeng T; Yang Y
    Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31892117
    [TBL] [Abstract][Full Text] [Related]  

  • 20. SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode.
    Deng X; Liu R; Li S; Li L; Wu H; Li X
    Materials (Basel); 2021 Nov; 14(22):. PubMed ID: 34832495
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.