These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

108 related articles for article (PubMed ID: 38258220)

  • 21. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.
    Mukherjee K; De Santi C; Borga M; You S; Geens K; Bakeroot B; Decoutere S; Meneghesso G; Zanoni E; Meneghini M
    Materials (Basel); 2020 Oct; 13(21):. PubMed ID: 33114060
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer.
    Chang SJ; Kim DS; Kim TW; Lee JH; Bae Y; Jung HW; Kang SC; Kim H; Noh YS; Lee SH; Kim SI; Ahn HK; Lim JW
    Nanomaterials (Basel); 2020 Oct; 10(11):. PubMed ID: 33143313
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN.
    Jung JH; Cho MS; Jang WD; Lee SH; Jang J; Bae JH; Kang IM
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4678-4683. PubMed ID: 32126640
    [TBL] [Abstract][Full Text] [Related]  

  • 25. High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates.
    Deng S; Wei J; Zhang C; Liao D; Sun T; Yang K; Xi L; Zhang B; Luo X
    Nanoscale Res Lett; 2022 Aug; 17(1):73. PubMed ID: 35951269
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
    Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage.
    Xia X; Guo Z; Sun H
    Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832730
    [TBL] [Abstract][Full Text] [Related]  

  • 28. An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP
    Park M; Yang JY; Yeom MJ; Bae B; Baek Y; Yoo G; Lee K
    Sci Adv; 2023 Sep; 9(38):eadh9889. PubMed ID: 37738348
    [TBL] [Abstract][Full Text] [Related]  

  • 29. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.
    Liu XY; Zhao SX; Zhang LQ; Huang HF; Shi JS; Zhang CM; Lu HL; Wang PF; Zhang DW
    Nanoscale Res Lett; 2015; 10():109. PubMed ID: 25852404
    [TBL] [Abstract][Full Text] [Related]  

  • 30. An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology.
    Alim MA; Gaquiere C; Crupi G
    Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34065962
    [TBL] [Abstract][Full Text] [Related]  

  • 31. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
    Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
    Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.
    Chu BH; Kang BS; Hung SC; Chen KH; Ren F; Sciullo A; Gila BP; Pearton SJ
    J Diabetes Sci Technol; 2010 Jan; 4(1):171-9. PubMed ID: 20167182
    [TBL] [Abstract][Full Text] [Related]  

  • 33. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT.
    Niu D; Wang Q; Li W; Chen C; Xu J; Jiang L; Feng C; Xiao H; Wang Q; Xu X; Wang X
    Micromachines (Basel); 2021 Jan; 12(2):. PubMed ID: 33530451
    [TBL] [Abstract][Full Text] [Related]  

  • 34. The Evolution of Manufacturing Technology for GaN Electronic Devices.
    Liu AC; Tu PT; Langpoklakpam C; Huang YW; Chang YT; Tzou AJ; Hsu LH; Lin CH; Kuo HC; Chang EY
    Micromachines (Basel); 2021 Jun; 12(7):. PubMed ID: 34201620
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT.
    Qin Y; Chai C; Li F; Liang Q; Wu H; Yang Y
    Micromachines (Basel); 2022 Jan; 13(1):. PubMed ID: 35056271
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.
    Heo JW; Kim YJ; Kim HS
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9436-42. PubMed ID: 25971079
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching.
    Zhang Y; Xiong W; Chen W; Luo X; Zhang X; Zheng Y
    Phys Chem Chem Phys; 2020 Feb; 22(8):4685-4691. PubMed ID: 32057040
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.
    Zhu S; Jia H; Li T; Tong Y; Liang Y; Wang X; Zeng T; Yang Y
    Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269635
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Enhanced Ferroelectric and Piezoelectric Properties in Graphene-Electroded Pb(Zr,Ti)O
    Fan H; Tan Z; Liu H; Zhang L; Zhang F; Du W; Fan Z; Gao X; Pan F; Yu D; Zhao Y
    ACS Appl Mater Interfaces; 2022 Apr; 14(15):17987-17994. PubMed ID: 35380776
    [TBL] [Abstract][Full Text] [Related]  

  • 40. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
    Roccaforte F; Greco G; Fiorenza P; Iucolano F
    Materials (Basel); 2019 May; 12(10):. PubMed ID: 31096689
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 6.