135 related articles for article (PubMed ID: 38258266)
1. Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation.
Nakamura T; Yoshino M; Toyabe T; Yasuda A
Micromachines (Basel); 2024 Jan; 15(1):. PubMed ID: 38258266
[TBL] [Abstract][Full Text] [Related]
2. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics.
Yoshino M; Ando Y; Deki M; Toyabe T; Kuriyama K; Honda Y; Nishimura T; Amano H; Kachi T; Nakamura T
Materials (Basel); 2019 Feb; 12(5):. PubMed ID: 30813566
[TBL] [Abstract][Full Text] [Related]
3. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
Hong S; Rana Au; Heo JW; Kim HS
J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
[TBL] [Abstract][Full Text] [Related]
4. Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.
Khediri A; Talbi A; Jaouad A; Maher H; Soltani A
Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832696
[TBL] [Abstract][Full Text] [Related]
5. A Novel Nitrogen Ion Implantation Technique for Turning Thin Film "Normally On" AlGaN/GaN Transistor into "Normally Off" Using TCAD Simulation.
Sheu G; Song YL; Susmitha D; Issac K; Mogarala R
Membranes (Basel); 2021 Nov; 11(11):. PubMed ID: 34832128
[TBL] [Abstract][Full Text] [Related]
6. Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices.
Shi YT; Ren FF; Xu WZ; Chen X; Ye J; Li L; Zhou D; Zhang R; Zheng Y; Tan HH; Jagadish C; Lu H
Sci Rep; 2019 Jun; 9(1):8796. PubMed ID: 31217468
[TBL] [Abstract][Full Text] [Related]
7. Nanofabrication of normally-off GaN vertical nanowire MESFETs.
Doundoulakis G; Adikimenakis A; Stavrinidis A; Tsagaraki K; Androulidaki M; Iacovella F; Deligeorgis G; Konstantinidis G; Georgakilas A
Nanotechnology; 2019 Jul; 30(28):285304. PubMed ID: 30917358
[TBL] [Abstract][Full Text] [Related]
8. Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications.
Paramasivam P; Gowthaman N; Srivastava VM
Recent Pat Nanotechnol; 2024; 18(3):335-349. PubMed ID: 37723950
[TBL] [Abstract][Full Text] [Related]
9. Design and Analysis of DC/DC Boost Converter Using Vertical GaN Power Device.
Cho MS; Mun HJ; Lee SH; An HD; Park J; Jang J; Bae JH; Kang IM
J Nanosci Nanotechnol; 2021 Aug; 21(8):4320-4324. PubMed ID: 33714321
[TBL] [Abstract][Full Text] [Related]
10. Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes.
Yin R; Li C; Zhang B; Wang J; Fu Y; Wen CP; Hao Y; Shen B; Wang M
Fundam Res; 2022 Jul; 2(4):629-634. PubMed ID: 38934000
[TBL] [Abstract][Full Text] [Related]
11. Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study.
Lee JH; Choi JH; Kang WS; Kim D; Min BG; Kang DM; Choi JH; Kim HS
Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36422387
[TBL] [Abstract][Full Text] [Related]
12. Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications.
Liu AC; Tu PT; Chen HC; Lai YY; Yeh PC; Kuo HC
Micromachines (Basel); 2023 Aug; 14(8):. PubMed ID: 37630118
[TBL] [Abstract][Full Text] [Related]
13. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range.
Wang S; Zhou Q; Chen K; Bai P; Wang J; Zhu L; Zhou C; Gao W; Zhang B
Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057371
[TBL] [Abstract][Full Text] [Related]
14. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.
Mukherjee K; De Santi C; Borga M; You S; Geens K; Bakeroot B; Decoutere S; Meneghesso G; Zanoni E; Meneghini M
Materials (Basel); 2020 Oct; 13(21):. PubMed ID: 33114060
[TBL] [Abstract][Full Text] [Related]
15. Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate.
Han Z; Li X; Wang H; Yuan J; Wang J; Wang M; Yang W; You S; Chang J; Zhang J; Hao Y
Micromachines (Basel); 2023 Apr; 14(5):. PubMed ID: 37241564
[TBL] [Abstract][Full Text] [Related]
16. Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation.
Sheu G; Song YL; Mogarala R; Susmitha D; Issac K
Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208294
[TBL] [Abstract][Full Text] [Related]
17. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
[TBL] [Abstract][Full Text] [Related]
18. Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure.
Park YJ; Kwak HT; Chang SB; Kim HS
J Nanosci Nanotechnol; 2019 Apr; 19(4):2298-2301. PubMed ID: 30486986
[TBL] [Abstract][Full Text] [Related]
19. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
[TBL] [Abstract][Full Text] [Related]
20. Fabrication and Evaluation of N-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods.
Nguyen HT; Yamada H; Yamada T; Takahashi T; Shimizu M
Materials (Basel); 2020 Feb; 13(4):. PubMed ID: 32085428
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]