135 related articles for article (PubMed ID: 38258266)
21. Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure.
Li Y; Xu L; Guo Z; Sun H
Micromachines (Basel); 2022 Aug; 13(8):. PubMed ID: 36014195
[TBL] [Abstract][Full Text] [Related]
22. UV light-emitting diodes grown on GaN templates with selective-area Si implantation.
Lee ML; Liao PH; Cheng HY; Yen WY; Sheu JK
Opt Express; 2020 Feb; 28(4):4674-4685. PubMed ID: 32121700
[TBL] [Abstract][Full Text] [Related]
23. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
[TBL] [Abstract][Full Text] [Related]
24. Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs.
Ma M; Cao Y; Lv H; Wang Z; Zhang X; Chen C; Wu L; Lv L; Zheng X; Tian W; Ma X; Hao Y
Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677140
[TBL] [Abstract][Full Text] [Related]
25. Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques.
Gallagher JC; Ebrish MA; Porter MA; Jacobs AG; Gunning BP; Kaplar RJ; Hobart KD; Anderson TJ
Sci Rep; 2022 Jan; 12(1):658. PubMed ID: 35027582
[TBL] [Abstract][Full Text] [Related]
26. Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications.
Cui P; Zeng Y
Sci Rep; 2022 Oct; 12(1):16683. PubMed ID: 36202953
[TBL] [Abstract][Full Text] [Related]
27. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
[TBL] [Abstract][Full Text] [Related]
28. GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance.
Yang X; Duan B; Yang Y
Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374753
[TBL] [Abstract][Full Text] [Related]
29. Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors.
Abid I; Hamdaoui Y; Mehta J; Derluyn J; Medjdoub F
Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144142
[TBL] [Abstract][Full Text] [Related]
30. Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction.
Sun T; Luo X; Wei J; Yang C; Zhang B
Nanoscale Res Lett; 2020 Jul; 15(1):149. PubMed ID: 32676687
[TBL] [Abstract][Full Text] [Related]
31. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.
Abidin MS; Hashim AM; Sharifabad ME; Rahman SF; Sadoh T
Sensors (Basel); 2011; 11(3):3067-77. PubMed ID: 22163786
[TBL] [Abstract][Full Text] [Related]
32. Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure.
Mohanty SK; Chen YY; Yeh PH; Horng RH
Sci Rep; 2019 Dec; 9(1):19691. PubMed ID: 31873168
[TBL] [Abstract][Full Text] [Related]
33. Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.
Mukherjee K; De Santi C; Borga M; Geens K; You S; Bakeroot B; Decoutere S; Diehle P; Hübner S; Altmann F; Buffolo M; Meneghesso G; Zanoni E; Meneghini M
Materials (Basel); 2021 Apr; 14(9):. PubMed ID: 33946943
[TBL] [Abstract][Full Text] [Related]
34. Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN.
Jung JH; Cho MS; Jang WD; Lee SH; Jang J; Bae JH; Kang IM
J Nanosci Nanotechnol; 2020 Aug; 20(8):4678-4683. PubMed ID: 32126640
[TBL] [Abstract][Full Text] [Related]
35. Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode.
Kim TH; Jang WH; Yim JH; Cha HY
Micromachines (Basel); 2021 Mar; 12(3):. PubMed ID: 33802182
[TBL] [Abstract][Full Text] [Related]
36. Structure and Technological Parameters' Effect on MISFET-Based Hydrogen Sensors' Characteristics.
Podlepetsky B; Samotaev N; Etrekova M; Litvinov A
Sensors (Basel); 2023 Mar; 23(6):. PubMed ID: 36991983
[TBL] [Abstract][Full Text] [Related]
37. Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers.
Cao W; Song C; Liao H; Yang N; Wang R; Tang G; Ji H
Sci Rep; 2023 Sep; 13(1):14820. PubMed ID: 37684297
[TBL] [Abstract][Full Text] [Related]
38. A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application.
Guan H; Shen G; Liu S; Jiang C; Wu J
Micromachines (Basel); 2023 Jan; 14(1):. PubMed ID: 36677229
[TBL] [Abstract][Full Text] [Related]
39. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A; Borga M; Meneghini M; De Santi C; Benazzi D; Besendörfer S; Püsche R; Derluyn J; Degroote S; Germain M; Kabouche R; Abid I; Meissner E; Zanoni E; Medjdoub F; Meneghesso G
Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31963553
[TBL] [Abstract][Full Text] [Related]
40. Ti
Wang C; Xu X; Tyagi S; Rout PC; Schwingenschlögl U; Sarkar B; Khandelwal V; Liu X; Gao L; Hedhili MN; Alshareef HN; Li X
Adv Mater; 2023 Jun; 35(22):e2211738. PubMed ID: 36942383
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]