147 related articles for article (PubMed ID: 38277430)
1. Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS
Shin H; Katiyar AK; Hoang AT; Yun SM; Kim BJ; Lee G; Kim Y; Lee J; Kim H; Ahn JH
ACS Nano; 2024 Feb; 18(5):4414-4423. PubMed ID: 38277430
[TBL] [Abstract][Full Text] [Related]
2. Mobility Enhancement of Strained MoS
Chen Y; Lu D; Kong L; Tao Q; Ma L; Liu L; Lu Z; Li Z; Wu R; Duan X; Liao L; Liu Y
ACS Nano; 2023 Aug; 17(15):14954-14962. PubMed ID: 37459447
[TBL] [Abstract][Full Text] [Related]
3. Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides.
Yang JA; Bennett RKA; Hoang L; Zhang Z; Thompson KJ; Michail A; Parthenios J; Papagelis K; Mannix AJ; Pop E
ACS Nano; 2024 Jun; ():. PubMed ID: 38921699
[TBL] [Abstract][Full Text] [Related]
4. Electrically Controlled High Sensitivity Strain Modulation in MoS
Varghese A; Pandey AH; Sharma P; Yin Y; Medhekar NV; Lodha S
Nano Lett; 2024 Jul; ():. PubMed ID: 38950892
[TBL] [Abstract][Full Text] [Related]
5. Enhancing Carrier Mobility in Monolayer MoS
Zhang Y; Zhao HL; Huang S; Hossain MA; van der Zande AM
ACS Nano; 2024 May; 18(19):12377-12385. PubMed ID: 38701373
[TBL] [Abstract][Full Text] [Related]
6. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.
Kang K; Xie S; Huang L; Han Y; Huang PY; Mak KF; Kim CJ; Muller D; Park J
Nature; 2015 Apr; 520(7549):656-60. PubMed ID: 25925478
[TBL] [Abstract][Full Text] [Related]
7. Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication.
Wu CR; Chu TW; Chen KC; Lin SY
J Vis Exp; 2017 Nov; (129):. PubMed ID: 29286451
[TBL] [Abstract][Full Text] [Related]
8. MoS
Gu Z; Zhang T; Luo J; Wang Y; Liu H; Chen L; Liu X; Yu W; Zhu H; Sun QQ; Zhang DW
ACS Appl Mater Interfaces; 2020 Dec; 12(49):54972-54979. PubMed ID: 33253522
[TBL] [Abstract][Full Text] [Related]
9. Strain-Enhanced Mobility of Monolayer MoS
Datye IM; Daus A; Grady RW; Brenner K; Vaziri S; Pop E
Nano Lett; 2022 Oct; 22(20):8052-8059. PubMed ID: 36198070
[TBL] [Abstract][Full Text] [Related]
10. Wafer-Scale Integration of Highly Uniform and Scalable MoS
Kim Y; Kim AR; Zhao G; Choi SY; Kang SC; Lim SK; Lee KE; Park J; Lee BH; Hahm MG; Kim DH; Yun J; Lee KH; Cho B
ACS Appl Mater Interfaces; 2017 Oct; 9(42):37146-37153. PubMed ID: 28976735
[TBL] [Abstract][Full Text] [Related]
11. Large-Scale Ultrafast Strain Engineering of CVD-Grown Two-Dimensional Materials on Strain Self-Limited Deformable Nanostructures toward Enhanced Field-Effect Transistors.
Huang Z; Lu N; Wang Z; Xu S; Guan J; Hu Y
Nano Lett; 2022 Sep; 22(18):7734-7741. PubMed ID: 35951414
[TBL] [Abstract][Full Text] [Related]
12. Wafer-Scale Uniform Growth of an Atomically Thin MoS
Hong W; Park C; Shim GW; Yang SY; Choi SY
ACS Appl Mater Interfaces; 2021 Oct; 13(42):50497-50504. PubMed ID: 34657426
[TBL] [Abstract][Full Text] [Related]
13. Realizing an Omega-Shaped Gate MoS
Zhao DH; Tian ZL; Liu H; Gu ZH; Zhu H; Chen L; Sun QQ; Zhang DW
ACS Appl Mater Interfaces; 2020 Mar; 12(12):14308-14314. PubMed ID: 32100523
[TBL] [Abstract][Full Text] [Related]
14. Benchmarking monolayer MoS
Sebastian A; Pendurthi R; Choudhury TH; Redwing JM; Das S
Nat Commun; 2021 Jan; 12(1):693. PubMed ID: 33514710
[TBL] [Abstract][Full Text] [Related]
15. Growth of large-scale and thickness-modulated MoSâ‚‚ nanosheets.
Choudhary N; Park J; Hwang JY; Choi W
ACS Appl Mater Interfaces; 2014 Dec; 6(23):21215-22. PubMed ID: 25382854
[TBL] [Abstract][Full Text] [Related]
16. Layer-controlled precise fabrication of ultrathin MoS
Liu L; Huang Y; Sha J; Chen Y
Nanotechnology; 2017 May; 28(19):195605. PubMed ID: 28323252
[TBL] [Abstract][Full Text] [Related]
17. High-Performance Wafer-Scale MoS
Xu H; Zhang H; Guo Z; Shan Y; Wu S; Wang J; Hu W; Liu H; Sun Z; Luo C; Wu X; Xu Z; Zhang DW; Bao W; Zhou P
Small; 2018 Nov; 14(48):e1803465. PubMed ID: 30328296
[TBL] [Abstract][Full Text] [Related]
18. Determining layer number of two-dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrates.
Li XL; Qiao XF; Han WP; Zhang X; Tan QH; Chen T; Tan PH
Nanotechnology; 2016 Apr; 27(14):145704. PubMed ID: 26906625
[TBL] [Abstract][Full Text] [Related]
19. High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems.
Chang HY; Yang S; Lee J; Tao L; Hwang WS; Jena D; Lu N; Akinwande D
ACS Nano; 2013 Jun; 7(6):5446-52. PubMed ID: 23668386
[TBL] [Abstract][Full Text] [Related]
20. Wafer-scale transferred multilayer MoS
Zhang S; Xu H; Liao F; Sun Y; Ba K; Sun Z; Qiu ZJ; Xu Z; Zhu H; Chen L; Sun Q; Zhou P; Bao W; Zhang DW
Nanotechnology; 2019 Apr; 30(17):174002. PubMed ID: 30641493
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]