These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
149 related articles for article (PubMed ID: 38277430)
21. Optimized single-layer MoS Kim H; Kim W; O'Brien M; McEvoy N; Yim C; Marcia M; Hauke F; Hirsch A; Kim GT; Duesberg GS Nanoscale; 2018 Sep; 10(37):17557-17566. PubMed ID: 30226520 [TBL] [Abstract][Full Text] [Related]
22. Large Biaxial Compressive Strain Tuning of Neutral and Charged Excitons in Single-Layer Transition Metal Dichalcogenides. Henríquez-Guerra E; Li H; Pasqués-Gramage P; Gosálbez-Martínez D; D'Agosta R; Castellanos-Gomez A; Calvo MR ACS Appl Mater Interfaces; 2023 Nov; 15(49):57369-78. PubMed ID: 38033040 [TBL] [Abstract][Full Text] [Related]
23. Monolayer MoS Lim HE; Irisawa T; Okada N; Okada M; Endo T; Nakanishi Y; Maniwa Y; Miyata Y Nanoscale; 2019 Nov; 11(42):19700-19704. PubMed ID: 31460548 [TBL] [Abstract][Full Text] [Related]
24. Large area, patterned growth of 2D MoS Sharma A; Mahlouji R; Wu L; Verheijen MA; Vandalon V; Balasubramanyam S; Hofmann JP; Erwin Kessels WMM; Bol AA Nanotechnology; 2020 Apr; 31(25):255603. PubMed ID: 32056974 [TBL] [Abstract][Full Text] [Related]
25. Recyclable free-polymer transfer of nano-grain MoS Woo G; Kim HU; Yoo H; Kim T Nanotechnology; 2021 Jan; 32(4):045702. PubMed ID: 32998130 [TBL] [Abstract][Full Text] [Related]
26. Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS Sohn W; Kwon KC; Suh JM; Lee TH; Roh KC; Jang HW Nano Converg; 2021 Apr; 8(1):11. PubMed ID: 33834329 [TBL] [Abstract][Full Text] [Related]
30. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Wang Y; Kim JC; Wu RJ; Martinez J; Song X; Yang J; Zhao F; Mkhoyan A; Jeong HY; Chhowalla M Nature; 2019 Apr; 568(7750):70-74. PubMed ID: 30918403 [TBL] [Abstract][Full Text] [Related]
31. Low-temperature growth of MoS Hoang AT; Hu L; Kim BJ; Van TTN; Park KD; Jeong Y; Lee K; Ji S; Hong J; Katiyar AK; Shong B; Kim K; Im S; Chung WJ; Ahn JH Nat Nanotechnol; 2023 Dec; 18(12):1439-1447. PubMed ID: 37500777 [TBL] [Abstract][Full Text] [Related]
32. Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets. Lv R; Robinson JA; Schaak RE; Sun D; Sun Y; Mallouk TE; Terrones M Acc Chem Res; 2015 Jan; 48(1):56-64. PubMed ID: 25490673 [TBL] [Abstract][Full Text] [Related]
33. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. Liu Z; Amani M; Najmaei S; Xu Q; Zou X; Zhou W; Yu T; Qiu C; Birdwell AG; Crowne FJ; Vajtai R; Yakobson BI; Xia Z; Dubey M; Ajayan PM; Lou J Nat Commun; 2014 Nov; 5():5246. PubMed ID: 25404060 [TBL] [Abstract][Full Text] [Related]
34. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS Chee SS; Seo D; Kim H; Jang H; Lee S; Moon SP; Lee KH; Kim SW; Choi H; Ham MH Adv Mater; 2019 Jan; 31(2):e1804422. PubMed ID: 30411825 [TBL] [Abstract][Full Text] [Related]
35. Additive manufacturing of patterned 2D semiconductor through recyclable masked growth. Guo Y; Shen PC; Su C; Lu AY; Hempel M; Han Y; Ji Q; Lin Y; Shi E; McVay E; Dou L; Muller DA; Palacios T; Li J; Ling X; Kong J Proc Natl Acad Sci U S A; 2019 Feb; 116(9):3437-3442. PubMed ID: 30755527 [TBL] [Abstract][Full Text] [Related]
36. Layer-controlled CVD growth of large-area two-dimensional MoS2 films. Jeon J; Jang SK; Jeon SM; Yoo G; Jang YH; Park JH; Lee S Nanoscale; 2015 Feb; 7(5):1688-95. PubMed ID: 25385535 [TBL] [Abstract][Full Text] [Related]
37. Wafer-scale production of highly uniform two-dimensional MoS Kim T; Mun J; Park H; Joung D; Diware M; Won C; Park J; Jeong SH; Kang SW Nanotechnology; 2017 May; 28(18):18LT01. PubMed ID: 28346218 [TBL] [Abstract][Full Text] [Related]
38. Highly Efficient Thin-Film Transistor via Cross-Linking of 1T Edge Functional 2H Molybdenum Disulfides. Lee H; Bak S; An SJ; Kim JH; Yun E; Kim M; Seo S; Jeong MS; Lee H ACS Nano; 2017 Dec; 11(12):12832-12839. PubMed ID: 29182846 [TBL] [Abstract][Full Text] [Related]
39. Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability. Shi ML; Chen L; Zhang TB; Xu J; Zhu H; Sun QQ; Zhang DW Small; 2017 Sep; 13(35):. PubMed ID: 28639331 [TBL] [Abstract][Full Text] [Related]
40. Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition. Woo WJ; Seo S; Yoon H; Lee S; Kim D; Park S; Kim Y; Sohn I; Park J; Chung SM; Kim H J Chem Phys; 2024 Mar; 160(10):. PubMed ID: 38456534 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]