These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

143 related articles for article (PubMed ID: 38315970)

  • 1. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers.
    Li R; Hussain K; Liao ME; Huynh K; Hoque MSB; Wyant S; Koh YR; Xu Z; Wang Y; Luccioni DP; Cheng Z; Shi J; Lee E; Graham S; Henry A; Hopkins PE; Goorsky MS; Khan MA; Luo T
    ACS Appl Mater Interfaces; 2024 Feb; 16(6):8109-8118. PubMed ID: 38315970
    [TBL] [Abstract][Full Text] [Related]  

  • 2. High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces.
    Mu F; Cheng Z; Shi J; Shin S; Xu B; Shiomi J; Graham S; Suga T
    ACS Appl Mater Interfaces; 2019 Sep; 11(36):33428-33434. PubMed ID: 31408316
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The role of optical phonons in intermediate layer-mediated thermal transport across solid interfaces.
    Lee E; Luo T
    Phys Chem Chem Phys; 2017 Jul; 19(28):18407-18415. PubMed ID: 28678278
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Significantly Enhanced Interfacial Thermal Conductance across GaN/Diamond Interfaces Utilizing Al
    Wu K; Chang G; Ye J; Zhang G
    ACS Appl Mater Interfaces; 2024 Oct; 16(43):58880-58890. PubMed ID: 39422442
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Thermal Boundary Conductance Across Heteroepitaxial ZnO/GaN Interfaces: Assessment of the Phonon Gas Model.
    Gaskins JT; Kotsonis G; Giri A; Ju S; Rohskopf A; Wang Y; Bai T; Sachet E; Shelton CT; Liu Z; Cheng Z; Foley BM; Graham S; Luo T; Henry A; Goorsky MS; Shiomi J; Maria JP; Hopkins PE
    Nano Lett; 2018 Dec; 18(12):7469-7477. PubMed ID: 30412411
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Thermal boundary conductance enhancement using experimentally achievable nanostructured interfaces - analytical study combined with molecular dynamics simulation.
    Lee E; Zhang T; Hu M; Luo T
    Phys Chem Chem Phys; 2016 Jun; 18(25):16794-801. PubMed ID: 27275647
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices.
    Cheng Z; Mu F; Yates L; Suga T; Graham S
    ACS Appl Mater Interfaces; 2020 Feb; 12(7):8376-8384. PubMed ID: 31986013
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices.
    Yates L; Anderson J; Gu X; Lee C; Bai T; Mecklenburg M; Aoki T; Goorsky MS; Kuball M; Piner EL; Graham S
    ACS Appl Mater Interfaces; 2018 Jul; 10(28):24302-24309. PubMed ID: 29939717
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN.
    Hwang T; Lee PC; Kummel AC; Cho K
    ACS Appl Mater Interfaces; 2024 Oct; 16(39):53098-53105. PubMed ID: 39287622
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Properties for Thermally Conductive Interfaces with Wide Band Gap Materials.
    Khan S; Angeles F; Wright J; Vishwakarma S; Ortiz VH; Guzman E; Kargar F; Balandin AA; Smith DJ; Jena D; Xing HG; Wilson R
    ACS Appl Mater Interfaces; 2022 Aug; 14(31):36178-36188. PubMed ID: 35895030
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.
    Field DE; Cuenca JA; Smith M; Fairclough SM; Massabuau FC; Pomeroy JW; Williams O; Oliver RA; Thayne I; Kuball M
    ACS Appl Mater Interfaces; 2020 Dec; 12(48):54138-54145. PubMed ID: 33196180
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch.
    Yu X; Li Y; He R; Wen Y; Chen R; Xu B; Gao Y
    Nanoscale Horiz; 2024 Aug; 9(9):1557-1567. PubMed ID: 39016031
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Effect of light atoms on thermal transport across solid-solid interfaces.
    Li R; Gordiz K; Henry A; Hopkins PE; Lee E; Luo T
    Phys Chem Chem Phys; 2019 Aug; 21(31):17029-17035. PubMed ID: 31353367
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC.
    Serban AB; Ene VL; Dinescu D; Zai I; Djourelov N; Vasile BS; Leca V
    Nanomaterials (Basel); 2021 May; 11(5):. PubMed ID: 34069169
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes.
    Kagawa R; Cheng Z; Kawamura K; Ohno Y; Moriyama C; Sakaida Y; Ouchi S; Uratani H; Inoue K; Nagai Y; Shigekawa N; Liang J
    Small; 2024 Mar; 20(13):e2305574. PubMed ID: 37964293
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Role of vibrational properties and electron-phonon coupling on thermal transport across metal-dielectric interfaces with ultrathin metallic interlayers.
    Oommen SM; Fallarino L; Heinze J; Hellwig O; Pisana S
    J Phys Condens Matter; 2022 Sep; 34(46):. PubMed ID: 36108621
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Thermal Visualization of Buried Interfaces Enabled by Ratio Signal and Steady-State Heating of Time-Domain Thermoreflectance.
    Cheng Z; Mu F; Ji X; You T; Xu W; Suga T; Ou X; Cahill DG; Graham S
    ACS Appl Mater Interfaces; 2021 Jul; 13(27):31843-31851. PubMed ID: 34191480
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Atomic-scale probing of heterointerface phonon bridges in nitride semiconductor.
    Li YH; Qi RS; Shi RC; Hu JN; Liu ZT; Sun YW; Li MQ; Li N; Song CL; Wang L; Hao ZB; Luo Y; Xue QK; Ma XC; Gao P
    Proc Natl Acad Sci U S A; 2022 Feb; 119(8):. PubMed ID: 35181607
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Tuning interfacial thermal conductance of GaN/AlN heterostructure nanowires by constructing core/shell structure.
    Ren X; Wu CW; Li SY; Xie ZX; Zhou WX
    J Phys Condens Matter; 2023 Jan; 35(11):. PubMed ID: 36623322
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces.
    Nieminen T; Koskinen T; Kornienko V; Ross G; Paulasto-Kröckel M
    ACS Appl Electron Mater; 2024 Apr; 6(4):2413-2419. PubMed ID: 38680727
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.