164 related articles for article (PubMed ID: 38390365)
1. New structure transistors for advanced technology node CMOS ICs.
Zhang Q; Zhang Y; Luo Y; Yin H
Natl Sci Rev; 2024 Mar; 11(3):nwae008. PubMed ID: 38390365
[TBL] [Abstract][Full Text] [Related]
2. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.
Radamson HH; Miao Y; Zhou Z; Wu Z; Kong Z; Gao J; Yang H; Ren Y; Zhang Y; Shi J; Xiang J; Cui H; Lu B; Li J; Liu J; Lin H; Xu H; Li M; Cao J; He C; Duan X; Zhao X; Su J; Du Y; Yu J; Wu Y; Jiang M; Liang D; Li B; Dong Y; Wang G
Nanomaterials (Basel); 2024 May; 14(10):. PubMed ID: 38786792
[TBL] [Abstract][Full Text] [Related]
3. The future transistors.
Cao W; Bu H; Vinet M; Cao M; Takagi S; Hwang S; Ghani T; Banerjee K
Nature; 2023 Aug; 620(7974):501-515. PubMed ID: 37587295
[TBL] [Abstract][Full Text] [Related]
4. On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node.
Wong H; Kakushima K
Nanomaterials (Basel); 2022 May; 12(10):. PubMed ID: 35630961
[TBL] [Abstract][Full Text] [Related]
5. State of the Art and Future Perspectives in Advanced CMOS Technology.
Radamson HH; Zhu H; Wu Z; He X; Lin H; Liu J; Xiang J; Kong Z; Xiong W; Li J; Cui H; Gao J; Yang H; Du Y; Xu B; Li B; Zhao X; Yu J; Dong Y; Wang G
Nanomaterials (Basel); 2020 Aug; 10(8):. PubMed ID: 32784801
[TBL] [Abstract][Full Text] [Related]
6. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.
Rigante S; Scarbolo P; Wipf M; Stoop RL; Bedner K; Buitrago E; Bazigos A; Bouvet D; Calame M; Schönenberger C; Ionescu AM
ACS Nano; 2015 May; 9(5):4872-81. PubMed ID: 25817336
[TBL] [Abstract][Full Text] [Related]
7. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La
Mah SK; Ker PJ; Ahmad I; Zainul Abidin NF; Ali Gamel MM
Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34640118
[TBL] [Abstract][Full Text] [Related]
8. Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays.
Liu C; Cao Y; Wang B; Zhang Z; Lin Y; Xu L; Yang Y; Jin C; Peng LM; Zhang Z
ACS Nano; 2022 Dec; 16(12):21482-21490. PubMed ID: 36416375
[TBL] [Abstract][Full Text] [Related]
9. A Novel Graphene Metal Semi-Insulator Semiconductor Transistor and Its New Super-Low Power Mechanism.
Li P; Zeng RZ; Liao YB; Zhang QW; Zhou JH
Sci Rep; 2019 Mar; 9(1):3642. PubMed ID: 30842466
[TBL] [Abstract][Full Text] [Related]
10. Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors.
Luo M; Zhu M; Wei M; Shao S; Robin M; Wei C; Cui Z; Zhao J; Zhang Z
ACS Appl Mater Interfaces; 2020 Nov; 12(44):49963-49970. PubMed ID: 33095560
[TBL] [Abstract][Full Text] [Related]
11. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.
Yang Y; Ding L; Han J; Zhang Z; Peng LM
ACS Nano; 2017 Apr; 11(4):4124-4132. PubMed ID: 28333433
[TBL] [Abstract][Full Text] [Related]
12. Miniaturization of CMOS.
Radamson HH; He X; Zhang Q; Liu J; Cui H; Xiang J; Kong Z; Xiong W; Li J; Gao J; Yang H; Gu S; Zhao X; Du Y; Yu J; Wang G
Micromachines (Basel); 2019 Apr; 10(5):. PubMed ID: 31052223
[TBL] [Abstract][Full Text] [Related]
13. 3D modeling of dual-gate FinFET.
Mil'shtein S; Devarakonda L; Zanchi B; Palma J
Nanoscale Res Lett; 2012 Nov; 7(1):625. PubMed ID: 23148493
[TBL] [Abstract][Full Text] [Related]
14. Three-dimensional monolithic integration in flexible printed organic transistors.
Kwon J; Takeda Y; Shiwaku R; Tokito S; Cho K; Jung S
Nat Commun; 2019 Jan; 10(1):54. PubMed ID: 30604747
[TBL] [Abstract][Full Text] [Related]
15. Nanoscale Channel Length MoS
Jia X; Cheng Z; Song Y; Zhang Y; Ye Y; Li M; Cheng X; Xu W; Li Y; Dai L
ACS Appl Mater Interfaces; 2024 Apr; 16(13):16544-16552. PubMed ID: 38513260
[TBL] [Abstract][Full Text] [Related]
16. Compact Potential Model for Si
Kim S; Choi WY
J Nanosci Nanotechnol; 2018 Sep; 18(9):5953-5958. PubMed ID: 29677723
[TBL] [Abstract][Full Text] [Related]
17. A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET).
Pan Z; Liu T; Yang J; Chen K; Xu S; Wu C; Xu M; Zhang DW
Micromachines (Basel); 2023 Sep; 14(9):. PubMed ID: 37763913
[TBL] [Abstract][Full Text] [Related]
18. Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System.
Nanda S; Dhar RS; Awwad F; Hussein MI
Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242078
[TBL] [Abstract][Full Text] [Related]
19. Three-Dimensional, Inkjet-Printed Organic Transistors and Integrated Circuits with 100% Yield, High Uniformity, and Long-Term Stability.
Kwon J; Takeda Y; Fukuda K; Cho K; Tokito S; Jung S
ACS Nano; 2016 Nov; 10(11):10324-10330. PubMed ID: 27786453
[TBL] [Abstract][Full Text] [Related]
20. Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials.
Knobloch T; Selberherr S; Grasser T
Nanomaterials (Basel); 2022 Oct; 12(20):. PubMed ID: 36296740
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
