These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

181 related articles for article (PubMed ID: 38390365)

  • 1. New structure transistors for advanced technology node CMOS ICs.
    Zhang Q; Zhang Y; Luo Y; Yin H
    Natl Sci Rev; 2024 Mar; 11(3):nwae008. PubMed ID: 38390365
    [TBL] [Abstract][Full Text] [Related]  

  • 2. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.
    Radamson HH; Miao Y; Zhou Z; Wu Z; Kong Z; Gao J; Yang H; Ren Y; Zhang Y; Shi J; Xiang J; Cui H; Lu B; Li J; Liu J; Lin H; Xu H; Li M; Cao J; He C; Duan X; Zhao X; Su J; Du Y; Yu J; Wu Y; Jiang M; Liang D; Li B; Dong Y; Wang G
    Nanomaterials (Basel); 2024 May; 14(10):. PubMed ID: 38786792
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The future transistors.
    Cao W; Bu H; Vinet M; Cao M; Takagi S; Hwang S; Ghani T; Banerjee K
    Nature; 2023 Aug; 620(7974):501-515. PubMed ID: 37587295
    [TBL] [Abstract][Full Text] [Related]  

  • 4. On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node.
    Wong H; Kakushima K
    Nanomaterials (Basel); 2022 May; 12(10):. PubMed ID: 35630961
    [TBL] [Abstract][Full Text] [Related]  

  • 5. State of the Art and Future Perspectives in Advanced CMOS Technology.
    Radamson HH; Zhu H; Wu Z; He X; Lin H; Liu J; Xiang J; Kong Z; Xiong W; Li J; Cui H; Gao J; Yang H; Du Y; Xu B; Li B; Zhao X; Yu J; Dong Y; Wang G
    Nanomaterials (Basel); 2020 Aug; 10(8):. PubMed ID: 32784801
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.
    Rigante S; Scarbolo P; Wipf M; Stoop RL; Bedner K; Buitrago E; Bazigos A; Bouvet D; Calame M; Schönenberger C; Ionescu AM
    ACS Nano; 2015 May; 9(5):4872-81. PubMed ID: 25817336
    [TBL] [Abstract][Full Text] [Related]  

  • 7. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La
    Mah SK; Ker PJ; Ahmad I; Zainul Abidin NF; Ali Gamel MM
    Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34640118
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays.
    Liu C; Cao Y; Wang B; Zhang Z; Lin Y; Xu L; Yang Y; Jin C; Peng LM; Zhang Z
    ACS Nano; 2022 Dec; 16(12):21482-21490. PubMed ID: 36416375
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits.
    Liang M; Yan H; Wazir N; Zhou C; Ma Z
    Nanomaterials (Basel); 2024 Aug; 14(17):. PubMed ID: 39269071
    [TBL] [Abstract][Full Text] [Related]  

  • 10. A Novel Graphene Metal Semi-Insulator Semiconductor Transistor and Its New Super-Low Power Mechanism.
    Li P; Zeng RZ; Liao YB; Zhang QW; Zhou JH
    Sci Rep; 2019 Mar; 9(1):3642. PubMed ID: 30842466
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors.
    Luo M; Zhu M; Wei M; Shao S; Robin M; Wei C; Cui Z; Zhao J; Zhang Z
    ACS Appl Mater Interfaces; 2020 Nov; 12(44):49963-49970. PubMed ID: 33095560
    [TBL] [Abstract][Full Text] [Related]  

  • 12. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.
    Yang Y; Ding L; Han J; Zhang Z; Peng LM
    ACS Nano; 2017 Apr; 11(4):4124-4132. PubMed ID: 28333433
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Miniaturization of CMOS.
    Radamson HH; He X; Zhang Q; Liu J; Cui H; Xiang J; Kong Z; Xiong W; Li J; Gao J; Yang H; Gu S; Zhao X; Du Y; Yu J; Wang G
    Micromachines (Basel); 2019 Apr; 10(5):. PubMed ID: 31052223
    [TBL] [Abstract][Full Text] [Related]  

  • 14. 3D modeling of dual-gate FinFET.
    Mil'shtein S; Devarakonda L; Zanchi B; Palma J
    Nanoscale Res Lett; 2012 Nov; 7(1):625. PubMed ID: 23148493
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Three-dimensional monolithic integration in flexible printed organic transistors.
    Kwon J; Takeda Y; Shiwaku R; Tokito S; Cho K; Jung S
    Nat Commun; 2019 Jan; 10(1):54. PubMed ID: 30604747
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Nanoscale Channel Length MoS
    Jia X; Cheng Z; Song Y; Zhang Y; Ye Y; Li M; Cheng X; Xu W; Li Y; Dai L
    ACS Appl Mater Interfaces; 2024 Apr; 16(13):16544-16552. PubMed ID: 38513260
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Compact Potential Model for Si
    Kim S; Choi WY
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5953-5958. PubMed ID: 29677723
    [TBL] [Abstract][Full Text] [Related]  

  • 18. A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET).
    Pan Z; Liu T; Yang J; Chen K; Xu S; Wu C; Xu M; Zhang DW
    Micromachines (Basel); 2023 Sep; 14(9):. PubMed ID: 37763913
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays.
    Liu C; Cao Y; Lu H; Lin Y; Jin C; Zhang Z
    ACS Appl Mater Interfaces; 2024 Oct; ():. PubMed ID: 39356653
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System.
    Nanda S; Dhar RS; Awwad F; Hussein MI
    Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242078
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.