134 related articles for article (PubMed ID: 38398997)
21. A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core-Insulator.
Zhang Y; Han K; Li AJ
Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32098218
[TBL] [Abstract][Full Text] [Related]
22. Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit.
Han K; Qiao G; Deng Z; Zhang Y
Micromachines (Basel); 2017 Nov; 8(11):. PubMed ID: 30400520
[TBL] [Abstract][Full Text] [Related]
23. Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs.
Kim MK; Choi YK; Park JY
Micromachines (Basel); 2022 Jan; 13(1):. PubMed ID: 35056288
[TBL] [Abstract][Full Text] [Related]
24. Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance.
Xie L; Zhu H; Zhang Y; Ai X; Li J; Wang G; Liu J; Du A; Yang H; Yin X; Huang W; Li C; Li Y; Wang Q; Lu S; Kong Z; Xiang J; Du Y; Luo J; Li J; Radamson HH; Wang W; Ye T
ACS Nano; 2023 Nov; 17(22):22259-22267. PubMed ID: 37823534
[TBL] [Abstract][Full Text] [Related]
25. Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET.
Lee K; Kim Y; Lee H; Park S; Lee Y; Joo MK; Ji H; Lee J; Chun J; Sung M; Cho YH; Kim D; Choi J; Lee JW; Jeon DY; Choi SJ; Kim GT
Nanotechnology; 2021 Apr; 32(16):165202. PubMed ID: 33302263
[TBL] [Abstract][Full Text] [Related]
26. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors.
Keum D; Kim H
Micromachines (Basel); 2019 Oct; 10(11):. PubMed ID: 31717725
[TBL] [Abstract][Full Text] [Related]
27. Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor.
Takase K; Ashikawa Y; Zhang G; Tateno K; Sasaki S
Sci Rep; 2017 Apr; 7(1):930. PubMed ID: 28424473
[TBL] [Abstract][Full Text] [Related]
28. 2D Materials-Based Static Random-Access Memory.
Liu CJ; Wan Y; Li LJ; Lin CP; Hou TH; Huang ZY; Hu VP
Adv Mater; 2022 Dec; 34(48):e2107894. PubMed ID: 34932857
[TBL] [Abstract][Full Text] [Related]
29. Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials.
Knobloch T; Selberherr S; Grasser T
Nanomaterials (Basel); 2022 Oct; 12(20):. PubMed ID: 36296740
[TBL] [Abstract][Full Text] [Related]
30. High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale.
Chen Z; Zhu H; Wang G; Wang Q; Xiao Z; Zhang Y; Liu J; Lu S; Du Y; Yu J; Xiong W; Kong Z; Du A; Yan Z; Zheng Y
Nanomaterials (Basel); 2023 Jun; 13(12):. PubMed ID: 37368297
[TBL] [Abstract][Full Text] [Related]
31. Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node.
Hong J; Park J; Lee J; Ham J; Park K; Jeon J
Micromachines (Basel); 2019 Dec; 10(12):. PubMed ID: 31817178
[TBL] [Abstract][Full Text] [Related]
32. Variability-Aware Simulation Strategy for Gate-All-Around Vertical Field Effect Transistor.
Ko K; Kang M; Jeon J; Shin H
J Nanosci Nanotechnol; 2019 Oct; 19(10):6715-6721. PubMed ID: 31027016
[TBL] [Abstract][Full Text] [Related]
33. Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.
Min SW; Lee HS; Choi HJ; Park MK; Nam T; Kim H; Ryu S; Im S
Nanoscale; 2013 Jan; 5(2):548-51. PubMed ID: 23233087
[TBL] [Abstract][Full Text] [Related]
34. An explicit continuous analytical model for Gate All Around (GAA) MOSFETs including the hot-carrier degradation effects.
Abdi MA; Djeffal F; Bentrcia T; Arar D
J Nanosci Nanotechnol; 2011 Oct; 11(10):9316-20. PubMed ID: 22400343
[TBL] [Abstract][Full Text] [Related]
35. Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization.
Li X; Wang M; Zhang J; Gao R; Wang H; Yang W; Yuan J; You S; Chang J; Liu Z; Hao Y
Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241665
[TBL] [Abstract][Full Text] [Related]
36. Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress - a modeling approach.
Tan CM; Chen X
Nano Converg; 2014; 1(1):11. PubMed ID: 28191394
[TBL] [Abstract][Full Text] [Related]
37. Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors.
Lee S; Jeong J; Yoon JS; Lee S; Lee J; Lim J; Baek RH
Nanomaterials (Basel); 2022 Sep; 12(19):. PubMed ID: 36234478
[TBL] [Abstract][Full Text] [Related]
38. RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling.
Otero-Carrascal A; Chaparro-Ortiz D; Srinivasan P; Huerta O; Gutiérrez-Domínguez E; Torres-Torres R
Micromachines (Basel); 2024 Feb; 15(2):. PubMed ID: 38398980
[TBL] [Abstract][Full Text] [Related]
39. Accurate Evaluation of Electro-Thermal Performance in Silicon Nanosheet Field-Effect Transistors with Schemes for Controlling Parasitic Bottom Transistors.
Jeong J; Lee S; Baek RH
Nanomaterials (Basel); 2024 Jun; 14(12):. PubMed ID: 38921882
[TBL] [Abstract][Full Text] [Related]
40. Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate Device.
Park J; Jang W; Shin C
Micromachines (Basel); 2021 Jul; 12(8):. PubMed ID: 34442508
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
