These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
127 related articles for article (PubMed ID: 38399096)
1. Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy. Liu L; Chen R; Kong C; Deng Z; Liu G; Yan J; Qin L; Du H; Song S; Zhang X; Wang W Materials (Basel); 2024 Feb; 17(4):. PubMed ID: 38399096 [TBL] [Abstract][Full Text] [Related]
2. Migration-Enhanced Epitaxial Growth of InAs/GaAs Short-Period Superlattices for THz Generation. Chen R; Li X; Du H; Yan J; Kong C; Liu G; Lu G; Zhang X; Song S; Zhang X; Liu L Nanomaterials (Basel); 2024 Jan; 14(3):. PubMed ID: 38334565 [TBL] [Abstract][Full Text] [Related]
3. Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection. Guo B; Liang B; Zheng J; Ahmed S; Krishna S; Ghosh A; Campbell J ACS Photonics; 2024 Apr; 11(4):1419-1427. PubMed ID: 38645992 [TBL] [Abstract][Full Text] [Related]
4. Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows. Shamakhov V; Nikolaev D; Slipchenko S; Fomin E; Smirnov A; Eliseyev I; Pikhtin N; Kop Ev P Nanomaterials (Basel); 2020 Dec; 11(1):. PubMed ID: 33374632 [TBL] [Abstract][Full Text] [Related]
5. Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures. Mamutin VV; Egorov AY; Kryzhanovskaya NV Nanotechnology; 2008 Nov; 19(44):445715. PubMed ID: 21832756 [TBL] [Abstract][Full Text] [Related]
7. Monolithic integration of InGaAs n-FETs and lasers on Ge substrate. Kumar A; Lee SY; Yadav S; Tan KH; Loke WK; Wicaksono S; Li D; Panah SM; Liang G; Yoon SF; Gong X; Antoniadis D; Yeo YC Opt Express; 2017 Mar; 25(5):5146-5155. PubMed ID: 28380779 [TBL] [Abstract][Full Text] [Related]
8. High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy. Luo S; Ji HM; Gao F; Xu F; Yang XG; Liang P; Yang T Opt Express; 2015 Apr; 23(7):8383-8. PubMed ID: 25968677 [TBL] [Abstract][Full Text] [Related]
9. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. Tang M; Chen S; Wu J; Jiang Q; Dorogan VG; Benamara M; Mazur YI; Salamo GJ; Seeds A; Liu H Opt Express; 2014 May; 22(10):11528-35. PubMed ID: 24921274 [TBL] [Abstract][Full Text] [Related]
10. Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency. Ezzedini M; Hidouri T; Alouane MHH; Sayari A; Shalaan E; Chauvin N; Sfaxi L; Saidi F; Al-Ghamdi A; Bru-Chevallier C; Maaref H Nanoscale Res Lett; 2017 Dec; 12(1):450. PubMed ID: 28697588 [TBL] [Abstract][Full Text] [Related]
11. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates. Bru-Chevallier C; El Akra A; Pelloux-Gervais D; Dumont H; Canut B; Chauvin N; Regreny P; Gendry M; Patriarche G; Jancu JM; Even J; Noe P; Calvo V; Salem B J Nanosci Nanotechnol; 2011 Oct; 11(10):9153-9. PubMed ID: 22400316 [TBL] [Abstract][Full Text] [Related]
12. InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy. He J; Yadavalli K; Zhao Z; Li N; Hao Z; Wang KL; Jacob AP Nanotechnology; 2008 Nov; 19(45):455607. PubMed ID: 21832784 [TBL] [Abstract][Full Text] [Related]
13. Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires. Stettner T; Thurn A; Döblinger M; Hill MO; Bissinger J; Schmiedeke P; Matich S; Kostenbader T; Ruhstorfer D; Riedl H; Kaniber M; Lauhon LJ; Finley JJ; Koblmüller G Nano Lett; 2018 Oct; 18(10):6292-6300. PubMed ID: 30185051 [TBL] [Abstract][Full Text] [Related]
14. Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale. Pan D; Wang JY; Zhang W; Zhu L; Su X; Fan F; Fu Y; Huang S; Wei D; Zhang L; Sui M; Yartsev A; Xu H; Zhao J Nano Lett; 2019 Mar; 19(3):1632-1642. PubMed ID: 30779588 [TBL] [Abstract][Full Text] [Related]
15. Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature. Iba S; Okamoto R; Obu K; Obata Y; Ohno Y Micromachines (Basel); 2021 Sep; 12(9):. PubMed ID: 34577755 [TBL] [Abstract][Full Text] [Related]
16. Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components. Li H; Tang J; Pang G; Wang D; Fang X; Chen R; Wei Z RSC Adv; 2019 Nov; 9(65):38114-38118. PubMed ID: 35541770 [TBL] [Abstract][Full Text] [Related]
17. Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates. Wang L; Li M; Xiong M; Wang W; Gao H; Zhao L J Nanosci Nanotechnol; 2010 Nov; 10(11):7359-61. PubMed ID: 21137934 [TBL] [Abstract][Full Text] [Related]
18. Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature. Benyoucef M; Zuerbig V; Reithmaier JP; Kroh T; Schell AW; Aichele T; Benson O Nanoscale Res Lett; 2012 Aug; 7(1):493. PubMed ID: 22937992 [TBL] [Abstract][Full Text] [Related]
19. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications. Li Z; Wu J; Wang ZM; Fan D; Guo A; Li S; Yu SQ; Manasreh O; Salamo GJ Nanoscale Res Lett; 2010 Apr; 5(6):1079-84. PubMed ID: 20672090 [TBL] [Abstract][Full Text] [Related]
20. Measurements of the Thermal Resistivity of InAlAs, InGaAs, and InAlAs/InGaAs Superlattices. Jaffe GR; Mei S; Boyle C; Kirch JD; Savage DE; Botez D; Mawst LJ; Knezevic I; Lagally MG; Eriksson MA ACS Appl Mater Interfaces; 2019 Mar; 11(12):11970-11975. PubMed ID: 30807087 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]