139 related articles for article (PubMed ID: 38430571)
1. Enhancing ferroelectric performance in hafnia-based MFIS capacitor through interface passivation and bulk doping.
Yang J; Xie Y; Zhu C; Chen S; Wei J; Liu Y; Chen M; Cao D
Nanotechnology; 2024 Mar; 35(23):. PubMed ID: 38430571
[TBL] [Abstract][Full Text] [Related]
2. Reduced fatigue and leakage of ferroelectric TiN/Hf
Hsain HA; Lee Y; Lancaster S; Lomenzo PD; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
Nanotechnology; 2023 Jan; 34(12):. PubMed ID: 36538824
[TBL] [Abstract][Full Text] [Related]
3. Improved remnant polarization of Zr-doped HfO
Choi Y; Park H; Han C; Min J; Shin C
Sci Rep; 2022 Oct; 12(1):16750. PubMed ID: 36202954
[TBL] [Abstract][Full Text] [Related]
4. Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO
Peng Y; Wang Z; Wu Q; Zhang S; Ma W; Xiao W; Zhang C; Hao Y
Nanotechnology; 2024 Jun; 35(37):. PubMed ID: 38861971
[TBL] [Abstract][Full Text] [Related]
5. Enhanced Switching Reliability of Hf
Huang F; Saini B; Yu Z; Yoo C; Thampy V; He X; Baniecki JD; Tsai W; Meng AC; McIntyre PC; Wong S
ACS Appl Mater Interfaces; 2023 Nov; 15(43):50246-50253. PubMed ID: 37856882
[TBL] [Abstract][Full Text] [Related]
6. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films.
Hsain HA; Lee Y; Lancaster S; Materano M; Alcala R; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
ACS Appl Mater Interfaces; 2022 Sep; 14(37):42232-42244. PubMed ID: 36069477
[TBL] [Abstract][Full Text] [Related]
7. HfO
Kang M; Peng Y; Xiao W; Zhang Y; Wang Z; Du P; Jiang H; Liu F; Liu Y; Hao Y; Han G
ACS Appl Mater Interfaces; 2024 Jan; 16(2):2954-2963. PubMed ID: 38166401
[TBL] [Abstract][Full Text] [Related]
8. Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode.
Goh Y; Cho SH; Park SK; Jeon S
Nanoscale; 2020 Apr; 12(16):9024-9031. PubMed ID: 32270846
[TBL] [Abstract][Full Text] [Related]
9. Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability.
Kim IJ; Lee JS
Small; 2024 Mar; 20(13):e2306871. PubMed ID: 37967323
[TBL] [Abstract][Full Text] [Related]
10. Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing.
Joh H; Jung M; Hwang J; Goh Y; Jung T; Jeon S
ACS Appl Mater Interfaces; 2022 Jan; 14(1):1326-1333. PubMed ID: 34928573
[TBL] [Abstract][Full Text] [Related]
11. Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO
Wang SM; Liu CR; Chen YT; Lee SC; Tang YT
Nanotechnology; 2024 Feb; 35(20):. PubMed ID: 38316042
[TBL] [Abstract][Full Text] [Related]
12. A perspective on the physical scaling down of hafnia-based ferroelectrics.
Park JY; Lee DH; Park GH; Lee J; Lee Y; Park MH
Nanotechnology; 2023 Feb; 34(20):. PubMed ID: 36745914
[TBL] [Abstract][Full Text] [Related]
13. Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited
Kim HB; Jung M; Oh Y; Lee SW; Suh D; Ahn JH
Nanoscale; 2021 May; 13(18):8524-8530. PubMed ID: 33908540
[TBL] [Abstract][Full Text] [Related]
14. The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO
Goh Y; Jeon S
Nanotechnology; 2018 Aug; 29(33):335201. PubMed ID: 29786620
[TBL] [Abstract][Full Text] [Related]
15. Experimental study of endurance characteristics of Al-doped HfO
Choi Y; Shin J; Moon S; Min J; Han C; Shin C
Nanotechnology; 2023 Feb; 34(18):. PubMed ID: 36724507
[TBL] [Abstract][Full Text] [Related]
16. Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf
Oh Y; Lee SW; Choi JH; Ahn SE; Kim HB; Ahn JH
Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570505
[TBL] [Abstract][Full Text] [Related]
17. Improved Endurance of Ferroelectric Hf
Chen M; Lv S; Wang B; Jiang P; Chen Y; Ding Y; Wang Y; Chen Y; Wang Y
Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242025
[TBL] [Abstract][Full Text] [Related]
18. Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO
Zhang Y; Fan Z; Wang D; Wang J; Zou Z; Li Y; Li Q; Tao R; Chen D; Zeng M; Gao X; Dai J; Zhou G; Lu X; Liu JM
ACS Appl Mater Interfaces; 2020 Sep; 12(36):40510-40517. PubMed ID: 32805812
[TBL] [Abstract][Full Text] [Related]
19. Improving the ferroelectric properties of Lu doped Hf
Xiao Y; Yang L; Jiang Y; Liu S; Li G; Ouyang J; Tang M
Nanotechnology; 2024 Jul; 35(38):. PubMed ID: 38925105
[TBL] [Abstract][Full Text] [Related]
20. Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO
Xi Y; Liu L; Zhao J; Qin X; Zhang J; Zhang C; Liu W
Materials (Basel); 2023 Aug; 16(16):. PubMed ID: 37629850
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
