These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

117 related articles for article (PubMed ID: 38438537)

  • 1. Band-offsets scaling of low-index Ge/native-oxide heterostructures.
    Ong BL; Tok ES
    Sci Rep; 2024 Mar; 14(1):5377. PubMed ID: 38438537
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Visualization of band offsets at few-layer MoS
    Goel N; Kumar R; Kumar M
    Nanotechnology; 2021 Jun; 32(37):. PubMed ID: 34102621
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Band Alignment of the CdS/Cu
    Nagai T; Shimamura T; Tanigawa K; Iwamoto Y; Hamada H; Ohta N; Kim S; Tampo H; Shibata H; Matsubara K; Niki S; Terada N
    ACS Appl Mater Interfaces; 2019 Jan; 11(4):4637-4648. PubMed ID: 30623638
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium.
    Hudait MK; Clavel M; Liu JS; Ghosh A; Jain N; Bodnar RJ
    ACS Appl Mater Interfaces; 2017 Dec; 9(49):43315-43324. PubMed ID: 29144722
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.
    Shi K; Li DB; Song HP; Guo Y; Wang J; Xu XQ; Liu JM; Yang AL; Wei HY; Zhang B; Yang SY; Liu XL; Zhu QS; Wang ZG
    Nanoscale Res Lett; 2011 Dec; 6(1):50. PubMed ID: 27502672
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.
    Liu J; Liu X; Xu X; Wang J; Li C; Wei H; Yang S; Zhu Q; Fan Y; Zhang X; Wang Z
    Nanoscale Res Lett; 2010 Jun; 5(8):1340-3. PubMed ID: 20676206
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Band offsets engineering in asymmetric Janus bilayer transition-metal dichalcogenides.
    Liu H; Huang Z; Wu P; Xue W; He C; Qi X; Zhong J
    J Phys Condens Matter; 2020 Jan; 32(3):035502. PubMed ID: 31553961
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Surface dangling-bond States and band lineups in hydrogen-terminated Si, Ge, and Ge/si nanowires.
    Kagimura R; Nunes RW; Chacham H
    Phys Rev Lett; 2007 Jan; 98(2):026801. PubMed ID: 17358629
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Infrared analysis of catalytic CO
    de Vrijer T; Smets AHM
    Phys Chem Chem Phys; 2022 May; 24(17):10241-10248. PubMed ID: 35421890
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy.
    Li Z; Zhang B; Wang J; Liu J; Liu X; Yang S; Zhu Q; Wang Z
    Nanoscale Res Lett; 2011 Mar; 6(1):193. PubMed ID: 21711731
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Impacts of the Oxygen Precursor on the Interfacial Properties of La
    Zhao L; Liu H; Wang X; Wang Y; Wang S
    Materials (Basel); 2017 Jul; 10(8):. PubMed ID: 28773213
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs(1-y)Sb(y) with Tunable Antimony Composition.
    Liu JS; Clavel M; Hudait MK
    ACS Appl Mater Interfaces; 2015 Dec; 7(51):28624-31. PubMed ID: 26642121
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS
    Zhang T; Voshell A; Zhou D; Ward ZD; Yu Z; Liu M; Díaz Aponte KO; Granzier-Nakajima T; Lei Y; Liu H; Terrones H; Elías AL; Rana M; Terrones M
    Nanoscale; 2023 Jul; 15(29):12348-12357. PubMed ID: 37449871
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Evidence of trigonal dangling bonds at the Ge(111)/oxide interface by electrically detected magnetic resonance.
    Paleari S; Baldovino S; Molle A; Fanciulli M
    Phys Rev Lett; 2013 May; 110(20):206101. PubMed ID: 25167431
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys.
    Chèze C; Righi Riva F; Di Bella G; Placidi E; Prili S; Bertelli M; Diaz Fattorini A; Longo M; Calarco R; Bernasconi M; Abou El Kheir O; Arciprete F
    Nanomaterials (Basel); 2022 Mar; 12(6):. PubMed ID: 35335820
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Impact of oxidation and reduction annealing on the electrical properties of Ge/La
    Henkel C; Hellström PE; Ostling M; Stöger-Pollach M; Bethge O; Bertagnolli E
    Solid State Electron; 2012 Aug; 74(5):7-12. PubMed ID: 23483756
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.
    Jia C; Chen Y; Guo Y; Liu X; Yang S; Zhang W; Wang Z
    Nanoscale Res Lett; 2011 Apr; 6(1):316. PubMed ID: 21711842
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots.
    Kondratenko SV; Nikolenko AS; Vakulenko OV; Valakh MY; Yukhymchuk VO; Dvurechenskii AV; Nikiforov AI
    Nanotechnology; 2008 Apr; 19(14):145703. PubMed ID: 21817769
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Universal electronic structure of polar oxide hetero-interfaces.
    Treske U; Heming N; Knupfer M; Büchner B; Di Gennaro E; Khare A; Di Uccio US; Granozio FM; Krause S; Koitzsch A
    Sci Rep; 2015 Sep; 5():14506. PubMed ID: 26411304
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Interfacial, Electrical, and Band Alignment Characteristics of HfO
    Cao YQ; Wu B; Wu D; Li AD
    Nanoscale Res Lett; 2017 Dec; 12(1):370. PubMed ID: 28549375
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.