125 related articles for article (PubMed ID: 38451027)
1. Effect of Fe Doping Profile on Current Collapse in GaN-based RF HEMTs.
Xu L; Guo H; Tao J; Zavabeti A; Zhou Y; Zheng Y; Zhang R; Chen D
Chemistry; 2024 May; 30(27):e202304100. PubMed ID: 38451027
[TBL] [Abstract][Full Text] [Related]
2. Donor-like surface traps on two-dimensional electron gas and current collapse of AlGaN/GaN HEMTs.
Yu CH; Luo QZ; Luo XD; Liu PS
ScientificWorldJournal; 2013; 2013():931980. PubMed ID: 24348195
[TBL] [Abstract][Full Text] [Related]
3. Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications.
Zagni N; Verzellesi G; Chini A
Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557543
[TBL] [Abstract][Full Text] [Related]
4. Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs.
Ma M; Cao Y; Lv H; Wang Z; Zhang X; Chen C; Wu L; Lv L; Zheng X; Tian W; Ma X; Hao Y
Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677140
[TBL] [Abstract][Full Text] [Related]
5. On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs.
Zagni N; Chini A; Puglisi FM; Pavan P; Verzellesi G
Micromachines (Basel); 2021 Jun; 12(6):. PubMed ID: 34208780
[TBL] [Abstract][Full Text] [Related]
6. Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination.
Chen KM; Lin CJ; Chuang CW; Pai HC; Chang EY; Huang GW
Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241634
[TBL] [Abstract][Full Text] [Related]
7. Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review.
Zou X; Yang J; Qiao Q; Zou X; Chen J; Shi Y; Ren K
Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004901
[TBL] [Abstract][Full Text] [Related]
8. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.
Lee MW; Chuang CW; Gamiz F; Chang EY; Lin YC
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258200
[TBL] [Abstract][Full Text] [Related]
9. Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs.
Kaushik PK; Singh SK; Gupta A; Basu A; Chang EY
Nanoscale Res Lett; 2021 Oct; 16(1):159. PubMed ID: 34669088
[TBL] [Abstract][Full Text] [Related]
10. Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure.
Liu AC; Huang YW; Chen HC; Kuo HC
Micromachines (Basel); 2024 Apr; 15(4):. PubMed ID: 38675328
[TBL] [Abstract][Full Text] [Related]
11. Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode.
Zhang H; Kang X; Zheng Y; Wu H; Wei K; Liu X; Ye T; Jin Z
Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832708
[TBL] [Abstract][Full Text] [Related]
12. Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect.
Chen X; Dong J; He C; He L; Chen Z; Li S; Zhang K; Wang X; Wang ZL
Nanomicro Lett; 2021 Feb; 13(1):67. PubMed ID: 34138301
[TBL] [Abstract][Full Text] [Related]
13. Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN
Gao X; Guo H; Wang R; Pan D; Chen P; Chen D; Lu H; Zhang R; Zheng Y
Micromachines (Basel); 2022 Aug; 13(9):. PubMed ID: 36144019
[TBL] [Abstract][Full Text] [Related]
14. Ti
Wang C; Xu X; Tyagi S; Rout PC; Schwingenschlögl U; Sarkar B; Khandelwal V; Liu X; Gao L; Hedhili MN; Alshareef HN; Li X
Adv Mater; 2023 Jun; 35(22):e2211738. PubMed ID: 36942383
[TBL] [Abstract][Full Text] [Related]
15. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs.
Paz-Martínez G; Íñiguez-de-la-Torre I; Sánchez-Martín H; Novoa-López JA; Hoel V; Cordier Y; Mateos J; González T
Sensors (Basel); 2022 Feb; 22(4):. PubMed ID: 35214416
[TBL] [Abstract][Full Text] [Related]
16. Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT.
Liu C; Wang J; Chen Z; Liu J; Su J
Micromachines (Basel); 2023 Jan; 14(2):. PubMed ID: 36838005
[TBL] [Abstract][Full Text] [Related]
17. Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors.
Im KS; Reddy MSP; Choi J; Hwang Y; Roh JS; An SJ; Lee JH
J Nanosci Nanotechnol; 2020 Jul; 20(7):4282-4286. PubMed ID: 31968458
[TBL] [Abstract][Full Text] [Related]
18. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
[TBL] [Abstract][Full Text] [Related]
19. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
Hong S; Rana Au; Heo JW; Kim HS
J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
[TBL] [Abstract][Full Text] [Related]
20. Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study.
Lee JH; Choi JH; Kang WS; Kim D; Min BG; Kang DM; Choi JH; Kim HS
Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36422387
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
