These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

134 related articles for article (PubMed ID: 38456534)

  • 1. Reducing contact resistance of MoS2-based field effect transistors through uniform interlayer insertion via atomic layer deposition.
    Woo WJ; Seo S; Yoon H; Lee S; Kim D; Park S; Kim Y; Sohn I; Park J; Chung SM; Kim H
    J Chem Phys; 2024 Mar; 160(10):. PubMed ID: 38456534
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS
    Jang J; Kim Y; Chee SS; Kim H; Whang D; Kim GH; Yun SJ
    ACS Appl Mater Interfaces; 2020 Jan; 12(4):5031-5039. PubMed ID: 31891246
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS
    Cho H; Kang D; Lee Y; Bae H; Hong S; Cho Y; Kim K; Yi Y; Park JH; Im S
    Nano Lett; 2021 Apr; 21(8):3503-3510. PubMed ID: 33856222
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Three-Dimensional Surface Treatment of MoS
    Lee H; Kim H; Kim K; Jeong K; Leem M; Park S; Kang J; Yeom G; Kim H
    ACS Appl Mater Interfaces; 2023 Oct; 15(39):46513-46519. PubMed ID: 37729007
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS
    Price KM; Schauble KE; McGuire FA; Farmer DB; Franklin AD
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):23072-23080. PubMed ID: 28653822
    [TBL] [Abstract][Full Text] [Related]  

  • 6. ALD-grown two-dimensional TiS
    Mahlouji R; Kessels WMME; Sagade AA; Bol AA
    Nanoscale Adv; 2023 Sep; 5(18):4718-4727. PubMed ID: 37705798
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High rectification ratio metal-insulator-semiconductor tunnel diode based on single-layer MoS
    Li Z; Yuan K; Ye Y
    Nanotechnology; 2020 Feb; 31(7):075202. PubMed ID: 31675749
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials.
    Bark H; Choi Y; Jung J; Kim JH; Kwon H; Lee J; Lee Z; Cho JH; Lee C
    Nanoscale; 2018 Jan; 10(3):1056-1062. PubMed ID: 29266157
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Interface Electrical Properties of Al
    Fisichella G; Schilirò E; Di Franco S; Fiorenza P; Lo Nigro R; Roccaforte F; Ravesi S; Giannazzo F
    ACS Appl Mater Interfaces; 2017 Mar; 9(8):7761-7771. PubMed ID: 28135063
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effect of Al
    Song JG; Kim SJ; Woo WJ; Kim Y; Oh IK; Ryu GH; Lee Z; Lim JH; Park J; Kim H
    ACS Appl Mater Interfaces; 2016 Oct; 8(41):28130-28135. PubMed ID: 27681666
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.
    Shi ML; Chen L; Zhang TB; Xu J; Zhu H; Sun QQ; Zhang DW
    Small; 2017 Sep; 13(35):. PubMed ID: 28639331
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Atomic Layer Deposition of Ultrathin La
    Fan J; Shi Y; Liu H; Wang S; Luan L; Duan L; Zhang Y; Wei X
    Materials (Basel); 2022 Feb; 15(5):. PubMed ID: 35269024
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Contact Resistance Engineering in WS
    Giza M; Świniarski M; Gertych AP; Czerniak-Łosiewicz K; Rogala M; Kowalczyk PJ; Zdrojek M
    ACS Appl Mater Interfaces; 2024 Sep; 16(36):48556-48564. PubMed ID: 39186441
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Layer-controlled precise fabrication of ultrathin MoS
    Liu L; Huang Y; Sha J; Chen Y
    Nanotechnology; 2017 May; 28(19):195605. PubMed ID: 28323252
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Field-Effect Transistor Based on 2D Microcrystalline MoS
    Zabrosaev IV; Kozodaev MG; Romanov RI; Chernikova AG; Mishra P; Doroshina NV; Arsenin AV; Volkov VS; Koroleva AA; Markeev AM
    Nanomaterials (Basel); 2022 Sep; 12(19):. PubMed ID: 36234390
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS
    Kim GS; Kim SH; Park J; Han KH; Kim J; Yu HY
    ACS Nano; 2018 Jun; 12(6):6292-6300. PubMed ID: 29851473
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Effect of Al
    Pham T; Chen Y; Lopez J; Yang M; Tran TT; Mulchandani A
    Biosensors (Basel); 2021 Dec; 11(12):. PubMed ID: 34940270
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Highly Uniform Atomic Layer-Deposited MoS
    Nandi DK; Sahoo S; Sinha S; Yeo S; Kim H; Bulakhe RN; Heo J; Shim JJ; Kim SH
    ACS Appl Mater Interfaces; 2017 Nov; 9(46):40252-40264. PubMed ID: 29099166
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS
    Chee SS; Seo D; Kim H; Jang H; Lee S; Moon SP; Lee KH; Kim SW; Choi H; Ham MH
    Adv Mater; 2019 Jan; 31(2):e1804422. PubMed ID: 30411825
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Enhanced Performance of MoS
    Pak Y; Park W; Mitra S; Sasikala Devi AA; Loganathan K; Kumaresan Y; Kim Y; Cho B; Jung GY; Hussain MM; Roqan IS
    Small; 2018 Feb; 14(5):. PubMed ID: 29205838
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.