These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

124 related articles for article (PubMed ID: 38467062)

  • 1. Research progress of out-of-plane GeSn nanowires.
    Shen Y; Chen W; Sun B
    Nanotechnology; 2024 Mar; 35(24):. PubMed ID: 38467062
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Controlling solid-liquid-solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO
    Gong R; Azrak E; Castro C; Duguay S; Pareige P; Roca I Cabarrocas P; Chen W
    Nanotechnology; 2021 Jun; 32(34):. PubMed ID: 33910185
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Enhancing the incorporation of Sn in vapor-liquid-solid GeSn nanowires by modulation of the droplet composition.
    Zeghouane M; Hijazi H; Bassani F; Lefevre G; Martinez E; Luciani T; Gentile P; Dubrovskii VG; Salem B
    Nanotechnology; 2022 Mar; 33(24):. PubMed ID: 35263731
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires.
    Hijazi H; Zeghouane M; Bassani F; Gentile P; Salem B; Dubrovskii VG
    Nanotechnology; 2020 Oct; 31(40):405602. PubMed ID: 32503017
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Stretching the Equilibrium Limit of Sn in Ge
    Biswas S; Doherty J; Galluccio E; Manning HG; Conroy M; Duffy R; Bangert U; Boland JJ; Holmes JD
    ACS Appl Nano Mater; 2021 Feb; 4(2):1048-1056. PubMed ID: 34056558
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Review of Si-Based GeSn CVD Growth and Optoelectronic Applications.
    Miao Y; Wang G; Kong Z; Xu B; Zhao X; Luo X; Lin H; Dong Y; Lu B; Dong L; Zhou J; Liu J; Radamson HH
    Nanomaterials (Basel); 2021 Sep; 11(10):. PubMed ID: 34684996
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications.
    Lin G; An Y; Ding H; Zhao H; Wang J; Chen S; Li C; Hickey R; Kolodzey J; Zeng Y
    Nanophotonics; 2023 Jan; 12(2):219-228. PubMed ID: 36776470
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires.
    Meng AC; Wang Y; Braun MR; Lentz JZ; Peng S; Cheng H; Marshall AF; Cai W; McIntyre PC
    Nanoscale; 2021 Oct; 13(41):17547-17555. PubMed ID: 34652350
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications.
    Lin PH; Ghosh S; Chang GE
    Sensors (Basel); 2024 Feb; 24(4):. PubMed ID: 38400421
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys.
    Schulte-Braucks C; von den Driesch N; Glass S; Tiedemann AT; Breuer U; Besmehn A; Hartmann JM; Ikonic Z; Zhao QT; Mantl S; Buca D
    ACS Appl Mater Interfaces; 2016 May; 8(20):13133-9. PubMed ID: 27149260
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires.
    Assali S; Bergamaschini R; Scalise E; Verheijen MA; Albani M; Dijkstra A; Li A; Koelling S; Bakkers EPAM; Montalenti F; Miglio L
    ACS Nano; 2020 Feb; 14(2):2445-2455. PubMed ID: 31972083
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Theoretical study of the bandgap regulation of a two-dimensional GeSn alloy under biaxial strain and uniaxial strain along the armchair direction.
    Huang W; Yang H; Cheng B; Xue C
    Phys Chem Chem Phys; 2018 Sep; 20(36):23344-23351. PubMed ID: 30175833
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Investigating the mechanical properties of GeSn nanowires.
    Kosmaca J; Meija R; Antsov M; Kunakova G; Sondors R; Iatsunskyi I; Coy E; Doherty J; Biswas S; Holmes JD; Erts D
    Nanoscale; 2019 Jul; 11(28):13612-13619. PubMed ID: 31290891
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Tunable 1D van der Waals Nanostructures by Vapor-Liquid-Solid Growth.
    Sutter P; Sutter E
    Acc Chem Res; 2023 Nov; 56(22):3235-3245. PubMed ID: 37938893
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications.
    Ghosh S; Lin KC; Tsai CH; Kumar H; Chen Q; Zhang L; Son B; Tan CS; Kim M; Mukhopadhyay B; Chang GE
    Micromachines (Basel); 2020 Aug; 11(9):. PubMed ID: 32839407
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications.
    Tai YC; Yeh PL; An S; Cheng HH; Kim M; Chang GE
    Nanotechnology; 2020 Oct; 31(44):445301. PubMed ID: 32674093
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices.
    Nawwar MA; Abo Ghazala MS; Sharaf El-Deen LM; Kashyout AEB
    RSC Adv; 2022 Aug; 12(38):24518-24554. PubMed ID: 36128382
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Short-wave infrared cavity resonances in a single GeSn nanowire.
    Kim Y; Assali S; Joo HJ; Koelling S; Chen M; Luo L; Shi X; Burt D; Ikonic Z; Nam D; Moutanabbir O
    Nat Commun; 2023 Jul; 14(1):4393. PubMed ID: 37474549
    [TBL] [Abstract][Full Text] [Related]  

  • 19. 3D Nanoscale Mapping of Short-Range Order in GeSn Alloys.
    Liu S; Covian AC; Wang X; Cline CT; Akey A; Dong W; Yu SQ; Liu J
    Small Methods; 2022 May; 6(5):e2200029. PubMed ID: 35373530
    [TBL] [Abstract][Full Text] [Related]  

  • 20. The growth of Ge and direct bandgap Ge
    Gunder C; Maia de Oliveira F; Wangila E; Stanchu H; Zamani-Alavijeh M; Ojo S; Acharya S; Said A; Li C; Mazur YI; Yu SQ; Salamo GJ
    RSC Adv; 2024 Jan; 14(2):1250-1257. PubMed ID: 38174282
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.