189 related articles for article (PubMed ID: 38470809)
21. Fermi-Level Pinning-Free WSe
Jang J; Ra HS; Ahn J; Kim TW; Song SH; Park S; Taniguch T; Watanabe K; Lee K; Hwang DK
Adv Mater; 2022 May; 34(19):e2109899. PubMed ID: 35306686
[TBL] [Abstract][Full Text] [Related]
22. Molecule-Upgraded van der Waals Contacts for Schottky-Barrier-Free Electronics.
Zhang X; Kang Z; Gao L; Liu B; Yu H; Liao Q; Zhang Z; Zhang Y
Adv Mater; 2021 Nov; 33(45):e2104935. PubMed ID: 34569109
[TBL] [Abstract][Full Text] [Related]
23. Dose-dependent effect of proton irradiation on electrical properties of WSe
Shin J; Cho K; Kim TY; Pak J; Kim JK; Lee W; Kim J; Chung S; Hong WK; Lee T
Nanoscale; 2019 Aug; 11(29):13961-13967. PubMed ID: 31305825
[TBL] [Abstract][Full Text] [Related]
24. Controlled p-type substitutional doping in large-area monolayer WSe
Pandey SK; Alsalman H; Azadani JG; Izquierdo N; Low T; Campbell SA
Nanoscale; 2018 Dec; 10(45):21374-21385. PubMed ID: 30427027
[TBL] [Abstract][Full Text] [Related]
25. Chemically Tuned p- and n-Type WSe
Ji HG; Solís-Fernández P; Yoshimura D; Maruyama M; Endo T; Miyata Y; Okada S; Ago H
Adv Mater; 2019 Oct; 31(42):e1903613. PubMed ID: 31475400
[TBL] [Abstract][Full Text] [Related]
26. Versatile Electronic Devices Based on WSe
Li W; Xiao X; Xu H
ACS Appl Mater Interfaces; 2019 Aug; 11(33):30045-30052. PubMed ID: 31342743
[TBL] [Abstract][Full Text] [Related]
27. Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures.
Zhang YW; Li JY; Wu CH; Chang CY; Chang SW; Shih MH; Lin SY
Sci Rep; 2020 Apr; 10(1):5967. PubMed ID: 32249852
[TBL] [Abstract][Full Text] [Related]
28. Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits.
Shim J; Jang SW; Lim JH; Kim H; Kang DH; Kim KH; Seo S; Heo K; Shin C; Yu HY; Lee S; Ko DH; Park JH
Nanoscale; 2019 Jul; 11(27):12871-12877. PubMed ID: 31243409
[TBL] [Abstract][Full Text] [Related]
29. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors.
Liu W; Kang J; Sarkar D; Khatami Y; Jena D; Banerjee K
Nano Lett; 2013 May; 13(5):1983-90. PubMed ID: 23527483
[TBL] [Abstract][Full Text] [Related]
30. P-type electrical contacts for 2D transition-metal dichalcogenides.
Wang Y; Kim JC; Li Y; Ma KY; Hong S; Kim M; Shin HS; Jeong HY; Chhowalla M
Nature; 2022 Oct; 610(7930):61-66. PubMed ID: 35914677
[TBL] [Abstract][Full Text] [Related]
31. Epitaxial van der Waals contacts of 2D TaSe
Qiao P; Xia J; Li X; Li Y; Cao J; Zhang Z; Lu H; Meng Q; Li J; Meng XM
Nanoscale; 2023 Nov; 15(42):17036-17044. PubMed ID: 37846513
[TBL] [Abstract][Full Text] [Related]
32. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.
Movva HC; Rai A; Kang S; Kim K; Fallahazad B; Taniguchi T; Watanabe K; Tutuc E; Banerjee SK
ACS Nano; 2015 Oct; 9(10):10402-10. PubMed ID: 26343531
[TBL] [Abstract][Full Text] [Related]
33. Modulation Doping of Single-Layer Semiconductors for Improved Contact at Metal Interfaces.
Cho Y; Schleder GR; Larson DT; Brutschea E; Byun KE; Park H; Kim P; Kaxiras E
Nano Lett; 2022 Dec; 22(23):9700-9706. PubMed ID: 36441915
[TBL] [Abstract][Full Text] [Related]
34. Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane.
Kang DH; Shim J; Jang SK; Jeon J; Jeon MH; Yeom GY; Jung WS; Jang YH; Lee S; Park JH
ACS Nano; 2015 Feb; 9(2):1099-107. PubMed ID: 25629805
[TBL] [Abstract][Full Text] [Related]
35. Reconfigurable Diodes Based on Vertical WSe
Avsar A; Marinov K; Marin EG; Iannaccone G; Watanabe K; Taniguchi T; Fiori G; Kis A
Adv Mater; 2018 May; 30(18):e1707200. PubMed ID: 29569298
[TBL] [Abstract][Full Text] [Related]
36. Low-Temperature 2D/2D Ohmic Contacts in WSe
Stanley LJ; Chuang HJ; Zhou Z; Koehler MR; Yan J; Mandrus DG; Popović D
ACS Appl Mater Interfaces; 2021 Mar; 13(8):10594-10602. PubMed ID: 33617715
[TBL] [Abstract][Full Text] [Related]
37. Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors.
Arnold AJ; Schulman DS; Das S
ACS Nano; 2020 Oct; 14(10):13557-13568. PubMed ID: 33026795
[TBL] [Abstract][Full Text] [Related]
38. Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices.
Ma Y; Liu B; Zhang A; Chen L; Fathi M; Shen C; Abbas AN; Ge M; Mecklenburg M; Zhou C
ACS Nano; 2015 Jul; 9(7):7383-91. PubMed ID: 26125321
[TBL] [Abstract][Full Text] [Related]
39. Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide.
Yao Z; Liu J; Xu K; Chow EKC; Zhu W
Sci Rep; 2018 Mar; 8(1):5221. PubMed ID: 29588469
[TBL] [Abstract][Full Text] [Related]
40. Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition.
Eichfeld SM; Hossain L; Lin YC; Piasecki AF; Kupp B; Birdwell AG; Burke RA; Lu N; Peng X; Li J; Azcatl A; McDonnell S; Wallace RM; Kim MJ; Mayer TS; Redwing JM; Robinson JA
ACS Nano; 2015 Feb; 9(2):2080-7. PubMed ID: 25625184
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]