These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

120 related articles for article (PubMed ID: 38506727)

  • 1. Oxygen tracer diffusion in amorphous hafnia films for resistive memory.
    Shin D; Ievlev AV; Beckmann K; Li J; Ren P; Cady N; Li Y
    Mater Horiz; 2024 May; 11(10):2372-2381. PubMed ID: 38506727
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Preparation of Remote Plasma Atomic Layer-Deposited HfO
    Yoo JH; Park WJ; Kim SW; Lee GR; Kim JH; Lee JH; Uhm SH; Lee HC
    Nanomaterials (Basel); 2023 Jun; 13(11):. PubMed ID: 37299688
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films.
    Hsain HA; Lee Y; Lancaster S; Materano M; Alcala R; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
    ACS Appl Mater Interfaces; 2022 Sep; 14(37):42232-42244. PubMed ID: 36069477
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Atomic Layer Deposition of HfO
    Gieraltowska S; Wachnicki L; Dluzewski P; Witkowski BS; Godlewski M; Guziewicz E
    Materials (Basel); 2023 May; 16(11):. PubMed ID: 37297215
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition.
    Kukli K; Aarik L; Vinuesa G; Dueñas S; Castán H; García H; Kasikov A; Ritslaid P; Piirsoo HM; Aarik J
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160824
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Plasma-Enhanced Atomic Layer Deposition of HfO
    Beladiya V; Faraz T; Schmitt P; Munser AS; Schröder S; Riese S; Mühlig C; Schachtler D; Steger F; Botha R; Otto F; Fritz T; van Helvoirt C; Kessels WMM; Gargouri H; Szeghalmi A
    ACS Appl Mater Interfaces; 2022 Mar; 14(12):14677-14692. PubMed ID: 35311275
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Bipolar Resistive Switching Characteristics of HfO
    Zhang W; Kong JZ; Cao ZY; Li AD; Wang LG; Zhu L; Li X; Cao YQ; Wu D
    Nanoscale Res Lett; 2017 Dec; 12(1):393. PubMed ID: 28599512
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Resistive Switching Characteristics of HfO
    Liu CF; Tang XG; Wang LQ; Tang H; Jiang YP; Liu QX; Li WH; Tang ZH
    Nanomaterials (Basel); 2019 Aug; 9(8):. PubMed ID: 31382660
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.
    Wang LG; Qian X; Cao YQ; Cao ZY; Fang GY; Li AD; Wu D
    Nanoscale Res Lett; 2015; 10():135. PubMed ID: 25852426
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.
    Kang YS; Kim DK; Jeong KS; Cho MH; Kim CY; Chung KB; Kim H; Kim DC
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):1982-9. PubMed ID: 23438318
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Structural, Optical and Electrical Properties of HfO
    Kim KM; Jang JS; Yoon SG; Yun JY; Chung NK
    Materials (Basel); 2020 Apr; 13(9):. PubMed ID: 32344793
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO
    Xi Y; Liu L; Zhao J; Qin X; Zhang J; Zhang C; Liu W
    Materials (Basel); 2023 Aug; 16(16):. PubMed ID: 37629850
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Low-Power Resistive Switching Characteristic in HfO
    Ding X; Feng Y; Huang P; Liu L; Kang J
    Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys.
    Yu Z; Saini B; Liu Y; Huang F; Mehta A; Baniecki JD; Wong HP; Tsai W; McIntyre PC
    ACS Appl Mater Interfaces; 2022 Nov; 14(47):53057-53064. PubMed ID: 36384298
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition.
    Zheng L; Cheng X; Yu Y; Xie Y; Li X; Wang Z
    Phys Chem Chem Phys; 2015 Feb; 17(5):3179-85. PubMed ID: 25519447
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Surface Passivation of Silicon Using HfO
    Zhang XY; Hsu CH; Lien SY; Chen SY; Huang W; Yang CH; Kung CY; Zhu WZ; Xiong FB; Meng XG
    Nanoscale Res Lett; 2017 Dec; 12(1):324. PubMed ID: 28476082
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide.
    Lee J; Yang K; Kwon JY; Kim JE; Han DI; Lee DH; Yoon JH; Park MH
    Nano Converg; 2023 Dec; 10(1):55. PubMed ID: 38038784
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Engineering synaptic characteristics of TaO
    Kim S; Abbas Y; Jeon YR; Sokolov AS; Ku B; Choi C
    Nanotechnology; 2018 Oct; 29(41):415204. PubMed ID: 30051887
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.
    Kang YS; Kim DK; Kang HK; Jeong KS; Cho MH; Ko DH; Kim H; Seo JH; Kim DC
    ACS Appl Mater Interfaces; 2014 Mar; 6(6):3896-906. PubMed ID: 24467437
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Microstructure dependent filament forming kinetics in HfO2 programmable metallization cells.
    Clarke H; Brown T; Hu J; Ganguli R; Reed A; Voevodin A; Shamberger PJ
    Nanotechnology; 2016 Oct; 27(42):425709. PubMed ID: 27632249
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.