These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
5. Synthesis of Ge Mahmodi H; Hashim MR; Soga T; Alrokayan S; Khan HA; Rusop M Materials (Basel); 2018 Nov; 11(11):. PubMed ID: 30424494 [TBL] [Abstract][Full Text] [Related]
6. Au-Sn Catalyzed Growth of Ge Sun YL; Matsumura R; Jevasuwan W; Fukata N Nano Lett; 2019 Sep; 19(9):6270-6277. PubMed ID: 31448621 [TBL] [Abstract][Full Text] [Related]
7. The growth of Ge and direct bandgap Ge Gunder C; Maia de Oliveira F; Wangila E; Stanchu H; Zamani-Alavijeh M; Ojo S; Acharya S; Said A; Li C; Mazur YI; Yu SQ; Salamo GJ RSC Adv; 2024 Jan; 14(2):1250-1257. PubMed ID: 38174282 [TBL] [Abstract][Full Text] [Related]
8. Microwave-assisted solution-liquid-solid growth of Ge1-xSnx nanowires with high tin content. Barth S; Seifner MS; Bernardi J Chem Commun (Camb); 2015 Aug; 51(61):12282-5. PubMed ID: 26138315 [TBL] [Abstract][Full Text] [Related]
9. Lattice dynamics of Ge Raha S; Biswas S; Doherty J; Mondal PK; Holmes JD; Singha A Nanoscale; 2022 May; 14(19):7211-7219. PubMed ID: 35510424 [TBL] [Abstract][Full Text] [Related]
10. Metastable Ge1-xCx alloy nanowires. Kim BS; Lee JH; Son K; Hwang SW; Choi BL; Lee EK; Kim JM; Whang D ACS Appl Mater Interfaces; 2012 Feb; 4(2):805-10. PubMed ID: 22201458 [TBL] [Abstract][Full Text] [Related]
11. Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge Groiss H; Glaser M; Schatzl M; Brehm M; Gerthsen D; Roth D; Bauer P; Schäffler F Sci Rep; 2017 Nov; 7(1):16114. PubMed ID: 29170483 [TBL] [Abstract][Full Text] [Related]
12. Synthesis of High Sn Content Ge Kouvetakis J; Wallace PM; Xu C; Ringwala DA; Mircovich M; Roldan MA; Webster PT; Grant PC; Menéndez J ACS Appl Mater Interfaces; 2023 Oct; 15(41):48382-48394. PubMed ID: 37801731 [TBL] [Abstract][Full Text] [Related]
13. Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range. Wang W; Dong Y; Lee SY; Loke WK; Lei D; Yoon SF; Liang G; Gong X; Yeo YC Opt Express; 2017 Aug; 25(16):18502-18507. PubMed ID: 29041050 [TBL] [Abstract][Full Text] [Related]
14. Microstructuring to Improve the Thermal Stability of GeSn Layers. Bonino V; Pauc N; Calvo V; Frauenrath M; Hartmann JM; Chelnokov A; Reboud V; Rosenthal M; Segura-Ruiz J ACS Appl Mater Interfaces; 2022 May; 14(19):22270-22277. PubMed ID: 35510890 [TBL] [Abstract][Full Text] [Related]
15. Phase-field investigation of the stages in radial growth of core-shell Ge/Ge Wang Y; Meng AC; McIntyre PC; Cai W Nanoscale; 2019 Nov; 11(45):21974-21980. PubMed ID: 31709446 [TBL] [Abstract][Full Text] [Related]
16. Characterization of a Ge Zheng J; Wang S; Cong H; Fenrich CS; Liu Z; Xue C; Li C; Zuo Y; Cheng B; Harris JS; Wang Q Opt Lett; 2017 Apr; 42(8):1608-1611. PubMed ID: 28409810 [TBL] [Abstract][Full Text] [Related]
17. Evolution of point defects in pulsed-laser-melted Ge Steuer O; Liedke MO; Butterling M; Schwarz D; Schulze J; Li Z; Wagner A; Fischer IA; Hübner R; Zhou S; Helm M; Cuniberti G; Georgiev YM; Prucnal S J Phys Condens Matter; 2023 Nov; 36(8):. PubMed ID: 37931296 [TBL] [Abstract][Full Text] [Related]
18. Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001). Wang JH; Wang T; Zhang JJ Nanomaterials (Basel); 2021 Mar; 11(3):. PubMed ID: 33808713 [TBL] [Abstract][Full Text] [Related]