These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
23. Epitaxial growth of Bi(110) and Bi Peng X; Liang H; Dong X; Yang H; Wang X; Qiao L; Li J; Wang C; Han J; Wang Q; Chen G; Xiao W J Phys Condens Matter; 2021 Aug; 33(41):. PubMed ID: 34271559 [TBL] [Abstract][Full Text] [Related]
24. Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering. Uemura S; Vantasin S; Kitahama Y; Tanaka YY; Suzuki T; Doujima D; Kaneko T; Ozaki Y Appl Spectrosc; 2020 Nov; 74(11):1384-1390. PubMed ID: 32627577 [TBL] [Abstract][Full Text] [Related]
25. Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC. Tiberj A; Camara N; Godignon P; Camassel J Nanoscale Res Lett; 2011 Jul; 6(1):478. PubMed ID: 21801347 [TBL] [Abstract][Full Text] [Related]
26. Thermal Conductivity of β-Phase Ga Song Y; Ranga P; Zhang Y; Feng Z; Huang HL; Santia MD; Badescu SC; Gonzalez-Valle CU; Perez C; Ferri K; Lavelle RM; Snyder DW; Klein BA; Deitz J; Baca AG; Maria JP; Ramos-Alvarado B; Hwang J; Zhao H; Wang X; Krishnamoorthy S; Foley BM; Choi S ACS Appl Mater Interfaces; 2021 Aug; 13(32):38477-38490. PubMed ID: 34370459 [TBL] [Abstract][Full Text] [Related]
27. In-plane x-ray diffraction for characterization of monolayer and few-layer transition metal dichalcogenide films. Chubarov M; Choudhury TH; Zhang X; Redwing JM Nanotechnology; 2018 Feb; 29(5):055706. PubMed ID: 29239306 [TBL] [Abstract][Full Text] [Related]
28. Ordered growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE. Jerng SK; Joo K; Kim Y; Yoon SM; Lee JH; Kim M; Kim JS; Yoon E; Chun SH; Kim YS Nanoscale; 2013 Nov; 5(21):10618-22. PubMed ID: 24056725 [TBL] [Abstract][Full Text] [Related]
29. Dynamically tunable coherent perfect absorption in topological insulators at oblique incidence. Lan G; Wei W; Luo P; Yi J; Shang Z; Xu T Opt Express; 2021 Aug; 29(18):28652-28663. PubMed ID: 34614991 [TBL] [Abstract][Full Text] [Related]
31. An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE. Poppitz D; Lotnyk A; Gerlach JW; Lenzner J; Grundmann M; Rauschenbach B Micron; 2015 Jun; 73():1-8. PubMed ID: 25846303 [TBL] [Abstract][Full Text] [Related]
32. Correlation between (in)commensurate domains of multilayer epitaxial graphene grown on SiC(0001) and single layer electronic behavior. Mendes-de-Sa TG; Goncalves AM; Matos MJ; Coelho PM; Magalhaes-Paniago R; Lacerda RG Nanotechnology; 2012 Nov; 23(47):475602. PubMed ID: 23111365 [TBL] [Abstract][Full Text] [Related]
33. Spectroscopic Signatures of Electronic Excitations in Raman Scattering in Thin Films of Rhombohedral Graphite. García-Ruiz A; Slizovskiy S; Mucha-Kruczyński M; Fal'ko VI Nano Lett; 2019 Sep; 19(9):6152-6156. PubMed ID: 31361497 [TBL] [Abstract][Full Text] [Related]
34. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD. Wang W; Wang H; Yang W; Zhu Y; Li G Sci Rep; 2016 Apr; 6():24448. PubMed ID: 27101930 [TBL] [Abstract][Full Text] [Related]
35. Patterned growth of graphene over epitaxial catalyst. Ago H; Tanaka I; Orofeo CM; Tsuji M; Ikeda K Small; 2010 Jun; 6(11):1226-33. PubMed ID: 20486221 [TBL] [Abstract][Full Text] [Related]
36. Modeling of the Lattice Dynamics in Strontium Titanate Films of Various Thicknesses: Raman Scattering Studies. Krasnenko V; Platonenko A; Liivand A; Rusevich LL; Mastrikov YA; Zvejnieks G; Sokolov M; Kotomin EA Materials (Basel); 2023 Sep; 16(18):. PubMed ID: 37763485 [TBL] [Abstract][Full Text] [Related]