156 related articles for article (PubMed ID: 38668226)
1. Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS
Susanto I; Liu HS; Ho YT; Yu IS
Nanomaterials (Basel); 2024 Apr; 14(8):. PubMed ID: 38668226
[TBL] [Abstract][Full Text] [Related]
2. Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS
Susanto I; Tsai CY; Ho YT; Tsai PY; Yu IS
Nanomaterials (Basel); 2021 May; 11(6):. PubMed ID: 34073367
[TBL] [Abstract][Full Text] [Related]
3. Interface Properties of MoS
Panasci SE; Deretzis I; Schilirò E; La Magna A; Roccaforte F; Koos A; Nemeth M; Pécz B; Cannas M; Agnello S; Giannazzo F
Nanomaterials (Basel); 2024 Jan; 14(2):. PubMed ID: 38251098
[TBL] [Abstract][Full Text] [Related]
4. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.
Samad L; Bladow SM; Ding Q; Zhuo J; Jacobberger RM; Arnold MS; Jin S
ACS Nano; 2016 Jul; 10(7):7039-46. PubMed ID: 27373305
[TBL] [Abstract][Full Text] [Related]
5. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.
Ruzmetov D; Zhang K; Stan G; Kalanyan B; Bhimanapati GR; Eichfeld SM; Burke RA; Shah PB; O'Regan TP; Crowne FJ; Birdwell AG; Robinson JA; Davydov AV; Ivanov TG
ACS Nano; 2016 Mar; 10(3):3580-8. PubMed ID: 26866442
[TBL] [Abstract][Full Text] [Related]
6. Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy.
Feng ZC; Liu J; Xie D; Nafisa MT; Zhang C; Wan L; Jiang B; Lin HH; Qiu ZR; Lu W; Klein B; Ferguson IT; Liu S
Materials (Basel); 2024 Jun; 17(12):. PubMed ID: 38930290
[TBL] [Abstract][Full Text] [Related]
7. Epitaxial Growth of Wafer-Scale Molybdenum Disulfide/Graphene Heterostructures by Metal-Organic Vapor-Phase Epitaxy and Their Application in Photodetectors.
Hoang AT; Katiyar AK; Shin H; Mishra N; Forti S; Coletti C; Ahn JH
ACS Appl Mater Interfaces; 2020 Sep; 12(39):44335-44344. PubMed ID: 32877158
[TBL] [Abstract][Full Text] [Related]
8. Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer
Ruzmetov D; Neupane MR; Herzing A; O'Regan TP; Mazzoni A; Chin ML; Burke RA; Crowne FJ; Birdwell AG; Taylor DE; Kolmakov A; Zhang K; Robinson JA; Davydov AV; Ivanov TG
2d Mater; 2018; 5(4):. PubMed ID: 38616955
[TBL] [Abstract][Full Text] [Related]
9. Structural and surface characterizations of 2D β-In
Nallasani UR; Wu SK; Diep NQ; Lin YY; Wen HC; Chou WC; Chia CH
Sci Rep; 2024 Mar; 14(1):5146. PubMed ID: 38429525
[TBL] [Abstract][Full Text] [Related]
10. Epitaxial growth and interfacial property of monolayer MoS
Yan P; Tian Q; Yang G; Weng Y; Zhang Y; Wang J; Xie F; Lu N
RSC Adv; 2018 Sep; 8(58):33193-33197. PubMed ID: 35548113
[TBL] [Abstract][Full Text] [Related]
11. Eight In. Wafer-Scale Epitaxial Monolayer MoS
Yu H; Huang L; Zhou L; Peng Y; Li X; Yin P; Zhao J; Zhu M; Wang S; Liu J; Du H; Tang J; Zhang S; Zhou Y; Lu N; Liu K; Li N; Zhang G
Adv Mater; 2024 Apr; ():e2402855. PubMed ID: 38683952
[TBL] [Abstract][Full Text] [Related]
12. Layer-by-Layer Epitaxial Growth of Scalable WSe
Nakano M; Wang Y; Kashiwabara Y; Matsuoka H; Iwasa Y
Nano Lett; 2017 Sep; 17(9):5595-5599. PubMed ID: 28849935
[TBL] [Abstract][Full Text] [Related]
13. 2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy.
Kwak HM; Kim J; Lee JS; Kim J; Baik J; Choi SY; Shin S; Kim JS; Mun SH; Kim KP; Oh SH; Lee DS
ACS Appl Mater Interfaces; 2023 Dec; 15(50):59025-59036. PubMed ID: 38084630
[TBL] [Abstract][Full Text] [Related]
14. Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC.
Ben Jabra Z; Abel M; Fabbri F; Aqua JN; Koudia M; Michon A; Castrucci P; Ronda A; Vach H; De Crescenzi M; Berbezier I
ACS Nano; 2022 Apr; 16(4):5920-5931. PubMed ID: 35294163
[TBL] [Abstract][Full Text] [Related]
15. Characterization of nitride thin films by electron backscatter diffraction.
Trager-Cowan C; Sweeney F; Hastie J; Manson-Smith SK; Cowan DA; McColl D; Mohammed A; O'Donnell KP; Zubia D; Hersee SD; Foxon CT; Harrison I; Novikov SV
J Microsc; 2002 Mar; 205(Pt 3):226-30. PubMed ID: 11996185
[TBL] [Abstract][Full Text] [Related]
16. Large-Area MoS
Španková M; Chromik Š; Dobročka E; Pribusová Slušná L; Talacko M; Gregor M; Pécz B; Koos A; Greco G; Panasci SE; Fiorenza P; Roccaforte F; Cordier Y; Frayssinet E; Giannazzo F
Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947682
[TBL] [Abstract][Full Text] [Related]
17. Controlled van der Waals epitaxy of monolayer MoS2 triangular domains on graphene.
Ago H; Endo H; Solís-Fernández P; Takizawa R; Ohta Y; Fujita Y; Yamamoto K; Tsuji M
ACS Appl Mater Interfaces; 2015 Mar; 7(9):5265-73. PubMed ID: 25695865
[TBL] [Abstract][Full Text] [Related]
18. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.
Yu IS; Chang CP; Yang CP; Lin CT; Ma YR; Chen CC
Nanoscale Res Lett; 2014; 9(1):682. PubMed ID: 25593560
[TBL] [Abstract][Full Text] [Related]
19. Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum.
Miwa JA; Dendzik M; Grønborg SS; Bianchi M; Lauritsen JV; Hofmann P; Ulstrup S
ACS Nano; 2015 Jun; 9(6):6502-10. PubMed ID: 26039108
[TBL] [Abstract][Full Text] [Related]
20. Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer.
Ren F; Liu B; Chen Z; Yin Y; Sun J; Zhang S; Jiang B; Liu B; Liu Z; Wang J; Liang M; Yuan G; Yan J; Wei T; Yi X; Wang J; Zhang Y; Li J; Gao P; Liu Z; Liu Z
Sci Adv; 2021 Jul; 7(31):. PubMed ID: 34330700
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]