These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

136 related articles for article (PubMed ID: 38675307)

  • 1. The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation.
    Kim C; Yoon H; Park Y; Kim S; Kang G; Kim DS; Seok O
    Micromachines (Basel); 2024 Apr; 15(4):. PubMed ID: 38675307
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Radiation Response of Negative Gate Biased SiC MOSFETs.
    Takeyama A; Makino T; Okubo S; Tanaka Y; Yoshie T; Hijikata Y; Ohshima T
    Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31461860
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example.
    Wei Z; Fu H; Yan X; Li S; Zhang L; Wei J; Liu S; Sun W; Wu W; Bai S
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057175
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs.
    Qian J; Shi L; Jin M; Bhattacharya M; Shimbori A; Yu H; Houshmand S; White MH; Agarwal AK
    Materials (Basel); 2024 Mar; 17(7):. PubMed ID: 38611969
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.
    Zhu S; Liu T; Fan J; Maddi HLR; White MH; Agarwal AK
    Materials (Basel); 2022 Aug; 15(17):. PubMed ID: 36079378
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis.
    Das S; Zheng Y; Ahyi A; Kuroda MA; Dhar S
    Materials (Basel); 2022 Sep; 15(19):. PubMed ID: 36234077
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors.
    Lee G; Ha J; Kim K; Bae H; Kim CE; Kim J
    Micromachines (Basel); 2022 Jun; 13(6):. PubMed ID: 35744515
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests.
    Principato F; Allegra G; Cappello C; Crepel O; Nicosia N; D Arrigo S; Cantarella V; Di Mauro A; Abbene L; Mirabello M; Pintacuda F
    Sensors (Basel); 2021 Aug; 21(16):. PubMed ID: 34451067
    [TBL] [Abstract][Full Text] [Related]  

  • 9. A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures.
    Liu L; Guo J; Shi Y; Zeng K; Li G
    Micromachines (Basel); 2024 Jun; 15(6):. PubMed ID: 38930742
    [TBL] [Abstract][Full Text] [Related]  

  • 10. A 5-kV pulse generator with a 100-kV/µs slew rate based on series-connected 1700-V SiC MOSFETs for electrical insulation tests.
    Okuda T; Nishimura Y; Nishioka K; Kishimoto S; Kikuchi Y; Nakamura T
    Rev Sci Instrum; 2021 Nov; 92(11):114705. PubMed ID: 34852512
    [TBL] [Abstract][Full Text] [Related]  

  • 11. P-channel MOSFET as ionizing radiation detector.
    Pejović MM; Pejović SM
    Appl Radiat Isot; 2023 Jun; 196():110730. PubMed ID: 36871494
    [TBL] [Abstract][Full Text] [Related]  

  • 12. An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures.
    Qian J; Shi L; Jin M; Bhattacharya M; Shimbori A; Yu H; Houshmand S; White MH; Agarwal AK
    Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398907
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET.
    Li H; Yu R; Zhong Y; Yao R; Liao X; Chen X
    Micromachines (Basel); 2019 May; 10(5):. PubMed ID: 31083371
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Positive Bias Temperature Instability in SiC-Based Power MOSFETs.
    Volosov V; Bevilacqua S; Anoldo L; Tosto G; Fontana E; Russo AL; Fiegna C; Sangiorgi E; Tallarico AN
    Micromachines (Basel); 2024 Jun; 15(7):. PubMed ID: 39064382
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions.
    Zou Y; Wang J; Xu H; Wang H
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057316
    [TBL] [Abstract][Full Text] [Related]  

  • 16. A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance.
    Ma R; Wang R; Fang H; Li P; Zhao L; Wu H; Huang Z; Tao J; Hu S
    Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930654
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Energy and integrated dose dependence of MOSFET dosimeter sensitivity for irradiation energies between 30 kV and 60Co.
    Lavallée MC; Gingras L; Beaulieu L
    Med Phys; 2006 Oct; 33(10):3683-9. PubMed ID: 17089834
    [TBL] [Abstract][Full Text] [Related]  

  • 18. 4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses.
    Anoldo L; Zanetti E; Coco W; Russo A; Fiorenza P; Roccaforte F
    Materials (Basel); 2024 Apr; 17(8):. PubMed ID: 38673265
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Remaining Useful Lifetime Prediction Based on Extended Kalman Particle Filter for Power SiC MOSFETs.
    Wu W; Gu Y; Yu M; Gao C; Chen Y
    Micromachines (Basel); 2023 Apr; 14(4):. PubMed ID: 37421069
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Effects of 5 MeV Proton Irradiation on Nitrided SiO
    Li D; Zhang Y; Tang X; He Y; Yuan H; Jia Y; Song Q; Zhang M; Zhang Y
    Nanomaterials (Basel); 2020 Jul; 10(7):. PubMed ID: 32650592
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.