139 related articles for article (PubMed ID: 38687246)
1. Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor.
Ju D; Kim S; Park K; Lee J; Koo M; Kim S
ACS Appl Mater Interfaces; 2024 May; 16(19):24929-24942. PubMed ID: 38687246
[TBL] [Abstract][Full Text] [Related]
2. Tunable Resistive Switching in 2D MXene Ti
Zhang X; Chen H; Cheng S; Guo F; Jie W; Hao J
ACS Appl Mater Interfaces; 2022 Oct; 14(39):44614-44621. PubMed ID: 36136123
[TBL] [Abstract][Full Text] [Related]
3. Graphene oxide based synaptic memristor device for neuromorphic computing.
Sahu DP; Jetty P; Jammalamadaka SN
Nanotechnology; 2021 Apr; 32(15):155701. PubMed ID: 33412536
[TBL] [Abstract][Full Text] [Related]
4. Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO
Cho Y; Kim J; Kang M; Kim S
Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837316
[TBL] [Abstract][Full Text] [Related]
5. Programmable Retention Characteristics in MoS
Lee Y; Huang Y; Chang YF; Yang SJ; Ignacio ND; Kutagulla S; Mohan S; Kim S; Lee J; Akinwande D; Kim S
ACS Nano; 2024 Jun; 18(22):14327-14338. PubMed ID: 38767980
[TBL] [Abstract][Full Text] [Related]
6. Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network.
Seok H; Son S; Jathar SB; Lee J; Kim T
Sensors (Basel); 2023 Mar; 23(6):. PubMed ID: 36991829
[TBL] [Abstract][Full Text] [Related]
7. Implementation of Artificial Synapse Using IGZO-Based Resistive Switching Device.
Kim S; Ju D; Kim S
Materials (Basel); 2024 Jan; 17(2):. PubMed ID: 38276419
[TBL] [Abstract][Full Text] [Related]
8. Bipolar Resistive Switching in TiO
Jena AK; Sahu MC; Mohanan KU; Mallik SK; Sahoo S; Pradhan GK; Sahoo S
ACS Appl Mater Interfaces; 2023 Jan; 15(2):3574-3585. PubMed ID: 36595219
[TBL] [Abstract][Full Text] [Related]
9. Diverse long-term potentiation and depression based on multilevel LiSiO
Wu Z; Li Z; Lin X; Shan X; Chen G; Yang C; Zhao X; Sun Z; Hu K; Wang F; Ren T; Song Z; Zhang K
Nanotechnology; 2023 Sep; 34(47):. PubMed ID: 37586343
[TBL] [Abstract][Full Text] [Related]
10. Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO
Ju D; Koo M; Kim S
Materials (Basel); 2023 Nov; 16(23):. PubMed ID: 38068068
[TBL] [Abstract][Full Text] [Related]
11. Improved analog switching characteristics of Ta
Lee TS; Choi C
Nanotechnology; 2022 Mar; 33(24):. PubMed ID: 35226891
[TBL] [Abstract][Full Text] [Related]
12. Synaptic Plasticity and Metaplasticity of Biological Synapse Realized in a KNbO
Lee TH; Hwang HG; Woo JU; Kim DH; Kim TW; Nahm S
ACS Appl Mater Interfaces; 2018 Aug; 10(30):25673-25682. PubMed ID: 29985576
[TBL] [Abstract][Full Text] [Related]
13. The coexistence of threshold and memory switching characteristics of ALD HfO
Abbas H; Abbas Y; Hassan G; Sokolov AS; Jeon YR; Ku B; Kang CJ; Choi C
Nanoscale; 2020 Jul; 12(26):14120-14134. PubMed ID: 32597451
[TBL] [Abstract][Full Text] [Related]
14. Ultrafast and Low-Power 2D Bi
Dong Z; Hua Q; Xi J; Shi Y; Huang T; Dai X; Niu J; Wang B; Wang ZL; Hu W
Nano Lett; 2023 May; 23(9):3842-3850. PubMed ID: 37093653
[TBL] [Abstract][Full Text] [Related]
15. Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing.
Ju D; Lee J; Kim S; Cho S
J Chem Phys; 2024 Jul; 161(1):. PubMed ID: 38953444
[TBL] [Abstract][Full Text] [Related]
16. Superlow Power Consumption Memristor Based on Borphyrin-Deoxyribonucleic Acid Composite Films as Artificial Synapse for Neuromorphic Computing.
Wang Z; Zhu W; Li J; Shao Y; Li X; Shi H; Zhao J; Zhou Z; Wang Y; Yan X
ACS Appl Mater Interfaces; 2023 Oct; 15(42):49390-49401. PubMed ID: 37815786
[TBL] [Abstract][Full Text] [Related]
17. Control-Etched Ti
Gosai J; Patel M; Liu L; Lokhandwala A; Thakkar P; Chee MY; Jain M; Lew WS; Chaudhari N; Solanki A
ACS Appl Mater Interfaces; 2024 Apr; 16(14):17821-17831. PubMed ID: 38536948
[TBL] [Abstract][Full Text] [Related]
18. Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.
Wang R; Shi T; Zhang X; Wang W; Wei J; Lu J; Zhao X; Wu Z; Cao R; Long S; Liu Q; Liu M
Materials (Basel); 2018 Oct; 11(11):. PubMed ID: 30373122
[TBL] [Abstract][Full Text] [Related]
19. Controllable digital and analog resistive switching behavior of 2D layered WSe
Cheng S; Zhong L; Yin J; Duan H; Xie Q; Luo W; Jie W
Nanoscale; 2023 Mar; 15(10):4801-4808. PubMed ID: 36779310
[TBL] [Abstract][Full Text] [Related]
20. GeTe/MoTe
Khot AC; Nirmal KA; Dongale TD; Kim TG
Small; 2024 Jun; ():e2400791. PubMed ID: 38874088
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]