These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
117 related articles for article (PubMed ID: 38695758)
1. Designing barrier-free metal/MoS Rafiee Diznab M; Rumson AF; Maassen J; Johnson ER Phys Chem Chem Phys; 2024 Jun; 26(24):16947-16954. PubMed ID: 38695758 [TBL] [Abstract][Full Text] [Related]
2. Ohmic contacts of the two-dimensional Ca Wang X; Yu S; Xu Y; Huang B; Dai Y; Wei W Phys Chem Chem Phys; 2023 Jun; 25(22):15433-15440. PubMed ID: 37254579 [TBL] [Abstract][Full Text] [Related]
3. Non-invasively improving the Schottky barrier of MoS Fang Q; Zhao X; Yuan L; Wang B; Xia C; Ma F Phys Chem Chem Phys; 2021 Jul; 23(27):14796-14802. PubMed ID: 34198313 [TBL] [Abstract][Full Text] [Related]
4. A new insight for ohmic contacts to MoS Wang Q; Deng B; Shi X Phys Chem Chem Phys; 2017 Oct; 19(38):26151-26157. PubMed ID: 28930321 [TBL] [Abstract][Full Text] [Related]
5. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures. Su J; Feng L; Zhang Y; Liu Z Phys Chem Chem Phys; 2016 Jun; 18(25):16882-9. PubMed ID: 27282959 [TBL] [Abstract][Full Text] [Related]
6. Periodic trends in the structural, electronic, and transport properties of electrenes. Rafiee Diznab M; Johnson ER; Maassen J Nanoscale; 2023 Jul; 15(28):12038-12047. PubMed ID: 37403819 [TBL] [Abstract][Full Text] [Related]
7. Defect Dominated Charge Transport and Fermi Level Pinning in MoS Bampoulis P; van Bremen R; Yao Q; Poelsema B; Zandvliet HJW; Sotthewes K ACS Appl Mater Interfaces; 2017 Jun; 9(22):19278-19286. PubMed ID: 28508628 [TBL] [Abstract][Full Text] [Related]
9. Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides. Kim C; Moon I; Lee D; Choi MS; Ahmed F; Nam S; Cho Y; Shin HJ; Park S; Yoo WJ ACS Nano; 2017 Feb; 11(2):1588-1596. PubMed ID: 28088846 [TBL] [Abstract][Full Text] [Related]
10. Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS Jang J; Kim Y; Chee SS; Kim H; Whang D; Kim GH; Yun SJ ACS Appl Mater Interfaces; 2020 Jan; 12(4):5031-5039. PubMed ID: 31891246 [TBL] [Abstract][Full Text] [Related]
11. Impact of S-Vacancies on the Charge Injection Barrier at the Electrical Contact with the MoS Bussolotti F; Yang J; Kawai H; Wong CPY; Goh KEJ ACS Nano; 2021 Feb; 15(2):2686-2697. PubMed ID: 33502172 [TBL] [Abstract][Full Text] [Related]
12. Indirect Band Gap Emission by Hot Electron Injection in Metal/MoS₂ and Metal/WSe₂ Heterojunctions. Li Z; Ezhilarasu G; Chatzakis I; Dhall R; Chen CC; Cronin SB Nano Lett; 2015 Jun; 15(6):3977-82. PubMed ID: 25993397 [TBL] [Abstract][Full Text] [Related]
13. Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS Kim GS; Kim SH; Park J; Han KH; Kim J; Yu HY ACS Nano; 2018 Jun; 12(6):6292-6300. PubMed ID: 29851473 [TBL] [Abstract][Full Text] [Related]
14. Defect-Assisted Contact Property Enhancement in a Molybdenum Disulfide Monolayer. Chee SS; Lee JH; Lee K; Ham MH ACS Appl Mater Interfaces; 2020 Jan; 12(3):4129-4134. PubMed ID: 31880145 [TBL] [Abstract][Full Text] [Related]
15. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS Chee SS; Seo D; Kim H; Jang H; Lee S; Moon SP; Lee KH; Kim SW; Choi H; Ham MH Adv Mater; 2019 Jan; 31(2):e1804422. PubMed ID: 30411825 [TBL] [Abstract][Full Text] [Related]
16. Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors. Li HM; Lee DY; Choi MS; Qu D; Liu X; Ra CH; Yoo WJ Sci Rep; 2014 Feb; 4():4041. PubMed ID: 24509565 [TBL] [Abstract][Full Text] [Related]
18. Modulation of the transport properties of metal/MoS Guo R; Su J; Zhang P; He F; Lin Z; Zhang J; Chang J; Hao Y Nanotechnology; 2020 Nov; 31(48):485204. PubMed ID: 32931467 [TBL] [Abstract][Full Text] [Related]
19. The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces. Gong C; Colombo L; Wallace RM; Cho K Nano Lett; 2014; 14(4):1714-20. PubMed ID: 24660782 [TBL] [Abstract][Full Text] [Related]
20. Surface functional group modification induced partial Fermi level pinning and ohmic contact at borophene-MoS Zou D; Zhao W; Xie W; Xu Y; Li X; Yang C Phys Chem Chem Phys; 2020 Sep; 22(34):19202-19212. PubMed ID: 32812593 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]