These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

125 related articles for article (PubMed ID: 38708910)

  • 1. Theoretical Insight into the Band Alignment at High-κ Oxide XO
    Cheng C; Sun X; Gui Q; Wu G; Shen W; Dong F; Liu Y; Robertson J; Zhang Z; Guo Y; Liu S
    ACS Appl Mater Interfaces; 2024 May; 16(19):25581-25588. PubMed ID: 38708910
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Interfacial, Electrical, and Band Alignment Characteristics of HfO
    Cao YQ; Wu B; Wu D; Li AD
    Nanoscale Res Lett; 2017 Dec; 12(1):370. PubMed ID: 28549375
    [TBL] [Abstract][Full Text] [Related]  

  • 3. An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface charge model for advanced normally-off MOSFET devices.
    Alhasani R; Yabe T; Iyama Y; Oi N; Imanishi S; Nguyen QN; Kawarada H
    Sci Rep; 2022 Mar; 12(1):4203. PubMed ID: 35273177
    [TBL] [Abstract][Full Text] [Related]  

  • 4. High-Quality
    Cañas J; Reyes DF; Zakhtser A; Dussarrat C; Teramoto T; Gutiérrez M; Gheeraert E
    Nanomaterials (Basel); 2022 Nov; 12(23):. PubMed ID: 36500747
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Incorporation of Si and Zr into Pure HfO₂ and Its Effects on Dielectric Integrity.
    Kim H; Choi P; Lee N; Kim S; Koo K; Lee J; Choi B
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5899-5903. PubMed ID: 29677713
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain.
    Qu Y; Xu H; Hu J; Wang F; Liu Y
    Sci Rep; 2024 Apr; 14(1):9414. PubMed ID: 38658733
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Bonding, energies, and band offsets of Si-ZrO2 and HfO2 gate oxide interfaces.
    Peacock PW; Robertson J
    Phys Rev Lett; 2004 Feb; 92(5):057601. PubMed ID: 14995342
    [TBL] [Abstract][Full Text] [Related]  

  • 8. InN/XS
    Dai ZN; Xu Y; Zou DF; Yin WJ; Wang JN
    Phys Chem Chem Phys; 2023 Mar; 25(11):8144-8152. PubMed ID: 36877127
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Investigation of Nitridation on the Band Alignment at MoS
    Huan YW; Liu WJ; Tang XB; Xue XY; Wang XL; Sun QQ; Ding SJ
    Nanoscale Res Lett; 2019 May; 14(1):181. PubMed ID: 31144185
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Intriguing electronic, optical and photocatalytic performance of BSe, M
    Munawar M; Idrees M; Ahmad I; Din HU; Amin B
    RSC Adv; 2021 Dec; 12(1):42-52. PubMed ID: 35424496
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Band Offsets at κ-([Al,In]
    Schultz T; Kneiß M; Storm P; Splith D; von Wenckstern H; Grundmann M; Koch N
    ACS Appl Mater Interfaces; 2020 Feb; 12(7):8879-8885. PubMed ID: 31977187
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation.
    Chagarov EA; Porter L; Kummel AC
    J Chem Phys; 2016 Feb; 144(8):084704. PubMed ID: 26931715
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Tl
    He Z; Ma Y; Lei C; Peng R; Huang B; Dai Y
    J Chem Phys; 2020 Feb; 152(7):074703. PubMed ID: 32087644
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Ultrathin ferroic HfO
    Cheema SS; Shanker N; Wang LC; Hsu CH; Hsu SL; Liao YH; San Jose M; Gomez J; Chakraborty W; Li W; Bae JH; Volkman SK; Kwon D; Rho Y; Pinelli G; Rastogi R; Pipitone D; Stull C; Cook M; Tyrrell B; Stoica VA; Zhang Z; Freeland JW; Tassone CJ; Mehta A; Saheli G; Thompson D; Suh DI; Koo WT; Nam KJ; Jung DJ; Song WB; Lin CH; Nam S; Heo J; Parihar N; Grigoropoulos CP; Shafer P; Fay P; Ramesh R; Mahapatra S; Ciston J; Datta S; Mohamed M; Hu C; Salahuddin S
    Nature; 2022 Apr; 604(7904):65-71. PubMed ID: 35388197
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Interface Chemistry and Dielectric Optimization of TMA-Passivated high-
    Wang D; He G; Hao L; Qiao L; Fang Z; Liu J
    ACS Appl Mater Interfaces; 2020 Jun; 12(22):25390-25399. PubMed ID: 32383855
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.
    Yang L; Wang T; Zou Y; Lu HL
    Nanoscale Res Lett; 2017 Dec; 12(1):339. PubMed ID: 28486796
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Investigation of the Energy Band at the Molybdenum Disulfide and ZrO
    Liu X; Hu C; Li K; Wang W; Li Z; Ao J; Wu J; He W; Mao W; Liu Q; Yu W; Chung RJ
    Nanoscale Res Lett; 2018 Dec; 13(1):405. PubMed ID: 30560382
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Interface Optimization and Transport Modulation of Sm
    Lu J; He G; Yan J; Dai Z; Zheng G; Jiang S; Qiao L; Gao Q; Fang Z
    Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947792
    [TBL] [Abstract][Full Text] [Related]  

  • 19. An Overview of High-
    Liu J; Koide Y
    Sensors (Basel); 2018 Jun; 18(6):. PubMed ID: 29867032
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor with High-κ/Metal Gate Using Oxygen Scavenging Process.
    Lee J; Kim JH; Kwon DW; Park E; Park T; Kim HW; Park BG
    J Nanosci Nanotechnol; 2016 May; 16(5):4897-900. PubMed ID: 27483842
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.