130 related articles for article (PubMed ID: 38743018)
1. Symmetry Engineering of Epitaxial Hf
De A; Jung MH; Kim YH; Bae SB; Jeong SG; Oh JY; Choi Y; Lee H; Kim Y; Choi T; Kim YM; Yang SM; Jeong HY; Choi WS
ACS Appl Mater Interfaces; 2024 May; 16(21):27532-27540. PubMed ID: 38743018
[TBL] [Abstract][Full Text] [Related]
2. Improved polarization and endurance in ferroelectric Hf
Song T; Tan H; Estandía S; Gàzquez J; Gich M; Dix N; Fina I; Sánchez F
Nanoscale; 2022 Feb; 14(6):2337-2343. PubMed ID: 35088065
[TBL] [Abstract][Full Text] [Related]
3. Interface-engineered ferroelectricity of epitaxial Hf
Shi S; Xi H; Cao T; Lin W; Liu Z; Niu J; Lan D; Zhou C; Cao J; Su H; Zhao T; Yang P; Zhu Y; Yan X; Tsymbal EY; Tian H; Chen J
Nat Commun; 2023 Mar; 14(1):1780. PubMed ID: 36997572
[TBL] [Abstract][Full Text] [Related]
4. Wake-Up Free Ultrathin Ferroelectric Hf
Chouprik A; Mikheev V; Korostylev E; Kozodaev M; Zarubin S; Vinnik D; Gudkova S; Negrov D
Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947671
[TBL] [Abstract][Full Text] [Related]
5. Epitaxial Integration on Si(001) of Ferroelectric Hf
Lyu J; Fina I; Fontcuberta J; Sánchez F
ACS Appl Mater Interfaces; 2019 Feb; 11(6):6224-6229. PubMed ID: 30657323
[TBL] [Abstract][Full Text] [Related]
6. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.
Chernikova A; Kozodaev M; Markeev A; Negrov D; Spiridonov M; Zarubin S; Bak O; Buragohain P; Lu H; Suvorova E; Gruverman A; Zenkevich A
ACS Appl Mater Interfaces; 2016 Mar; 8(11):7232-7. PubMed ID: 26931409
[TBL] [Abstract][Full Text] [Related]
7. A rhombohedral ferroelectric phase in epitaxially strained Hf
Wei Y; Nukala P; Salverda M; Matzen S; Zhao HJ; Momand J; Everhardt AS; Agnus G; Blake GR; Lecoeur P; Kooi BJ; Íñiguez J; Dkhil B; Noheda B
Nat Mater; 2018 Dec; 17(12):1095-1100. PubMed ID: 30349031
[TBL] [Abstract][Full Text] [Related]
8. Quantification of Crystalline Phases in Hf
Cervasio R; Amzallag E; Verseils M; Hemme P; Brubach JB; Infante IC; Segantini G; Rojo Romeo P; Coati A; Vlad A; Garreau Y; Resta A; Vilquin B; Creuze J; Roy P
ACS Appl Mater Interfaces; 2024 Jan; 16(3):3829-3840. PubMed ID: 38214484
[TBL] [Abstract][Full Text] [Related]
9. High-Speed Switching and Giant Electroresistance in an Epitaxial Hf
Du X; Sun H; Wang H; Li J; Yin Y; Li X
ACS Appl Mater Interfaces; 2022 Jan; 14(1):1355-1361. PubMed ID: 34958206
[TBL] [Abstract][Full Text] [Related]
10. Ferroelectricity in Hf
Chouprik A; Zakharchenko S; Spiridonov M; Zarubin S; Chernikova A; Kirtaev R; Buragohain P; Gruverman A; Zenkevich A; Negrov D
ACS Appl Mater Interfaces; 2018 Mar; 10(10):8818-8826. PubMed ID: 29464951
[TBL] [Abstract][Full Text] [Related]
11. Ferroelectric Hf
Song T; Bachelet R; Saint-Girons G; Fina I; Sánchez F
Nanoscale; 2023 Mar; 15(11):5293-5299. PubMed ID: 36810904
[TBL] [Abstract][Full Text] [Related]
12. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf
Kim SJ; Mohan J; Kim HS; Hwang SM; Kim N; Jung YC; Sahota A; Kim K; Yu HY; Cha PR; Young CD; Choi R; Ahn J; Kim J
Materials (Basel); 2020 Jul; 13(13):. PubMed ID: 32630791
[TBL] [Abstract][Full Text] [Related]
13. Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf
Wang X; Wen Y; Wu M; Cui B; Wu YS; Li Y; Li X; Ye S; Ren P; Ji ZG; Lu HL; Wang R; Zhang DW; Huang R
ACS Appl Mater Interfaces; 2023 Mar; 15(12):15657-15667. PubMed ID: 36926843
[TBL] [Abstract][Full Text] [Related]
14. Improved Ferroelectric Properties in Hf
Zhao B; Yan Y; Bi J; Xu G; Xu Y; Yang X; Fan L; Liu M
Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080036
[TBL] [Abstract][Full Text] [Related]
15. Reversible fatigue-rejuvenation procedure and its mechanism in Hf
Liu Z; Zhong H; Xie D; He M; Wang C; Lyu H; Yang G; Jin K; Ge C
J Phys Condens Matter; 2023 Mar; 35(20):. PubMed ID: 36881920
[TBL] [Abstract][Full Text] [Related]
16. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films.
Hsain HA; Lee Y; Lancaster S; Materano M; Alcala R; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
ACS Appl Mater Interfaces; 2022 Sep; 14(37):42232-42244. PubMed ID: 36069477
[TBL] [Abstract][Full Text] [Related]
17. Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf
Zou Z; Tian G; Wang D; Zhang Y; Wang J; Li Y; Tao R; Fan Z; Chen D; Zeng M; Gao X; Dai JY; Lu X; Liu JM
Nanotechnology; 2021 May; 32(33):. PubMed ID: 33910189
[TBL] [Abstract][Full Text] [Related]
18. Enhanced Switching Reliability of Hf
Huang F; Saini B; Yu Z; Yoo C; Thampy V; He X; Baniecki JD; Tsai W; Meng AC; McIntyre PC; Wong S
ACS Appl Mater Interfaces; 2023 Nov; 15(43):50246-50253. PubMed ID: 37856882
[TBL] [Abstract][Full Text] [Related]
19. High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide.
Kim JY; Choi MJ; Lee YJ; Park SH; Choi S; Baek JH; Im IH; Kim SJ; Jang HW
ACS Appl Mater Interfaces; 2024 Apr; 16(15):19057-19067. PubMed ID: 38564293
[TBL] [Abstract][Full Text] [Related]
20. Improved Ferroelectric Switching Endurance of La-Doped Hf
Chernikova AG; Kozodaev MG; Negrov DV; Korostylev EV; Park MH; Schroeder U; Hwang CS; Markeev AM
ACS Appl Mater Interfaces; 2018 Jan; 10(3):2701-2708. PubMed ID: 29282976
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
