128 related articles for article (PubMed ID: 38770896)
1. High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation.
Yang S; Shi H; Hu Y; Si J; Chen C; Yang J; Qu H; Hu X; Zhang F; Zhang S
J Phys Chem Lett; 2024 May; 15(21):5721-5727. PubMed ID: 38770896
[TBL] [Abstract][Full Text] [Related]
2. Quantum transport of short-gate MOSFETs based on monolayer MoSi
Ye B; Jiang X; Gu Y; Yang G; Liu Y; Zhao H; Yang X; Wei C; Zhang X; Lu N
Phys Chem Chem Phys; 2022 Mar; 24(11):6616-6626. PubMed ID: 35234236
[TBL] [Abstract][Full Text] [Related]
3. Many-Body Effect and Device Performance Limit of Monolayer InSe.
Wang Y; Fei R; Quhe R; Li J; Zhang H; Zhang X; Shi B; Xiao L; Song Z; Yang J; Shi J; Pan F; Lu J
ACS Appl Mater Interfaces; 2018 Jul; 10(27):23344-23352. PubMed ID: 29916240
[TBL] [Abstract][Full Text] [Related]
4. Sub-5 nm Monolayer Arsenene and Antimonene Transistors.
Sun X; Song Z; Liu S; Wang Y; Li Y; Wang W; Lu J
ACS Appl Mater Interfaces; 2018 Jul; 10(26):22363-22371. PubMed ID: 29877077
[TBL] [Abstract][Full Text] [Related]
5. Performance Limit of Monolayer WSe
Sun X; Xu L; Zhang Y; Wang W; Liu S; Yang C; Zhang Z; Lu J
ACS Appl Mater Interfaces; 2020 May; 12(18):20633-20644. PubMed ID: 32285659
[TBL] [Abstract][Full Text] [Related]
6. Quantum transport of sub-5 nm InSe and In
Guo H; Yin Y; Yu W; Robertson J; Liu S; Zhang Z; Guo Y
Nanoscale; 2023 Feb; 15(7):3496-3503. PubMed ID: 36723054
[TBL] [Abstract][Full Text] [Related]
7. First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga
Ma Y; Dong L; Li P; Hu L; Lu B; Miao Y; Peng B; Tian A; Liu W
ACS Appl Mater Interfaces; 2022 Oct; 14(42):48220-48228. PubMed ID: 36251772
[TBL] [Abstract][Full Text] [Related]
8. Anisotropic Transport Property of Antimonene MOSFETs.
Yin Y; Shao C; Zhang C; Zhang Z; Zhang X; Robertson J; Guo Y
ACS Appl Mater Interfaces; 2020 May; 12(19):22378-22386. PubMed ID: 32320208
[TBL] [Abstract][Full Text] [Related]
9. Sub-9 nm high-performance and low-power transistors based on an in-plane NbSe
Cao ZL; Guo XH; Yao KL; Zhu L
Nanoscale; 2023 Nov; 15(42):17029-17035. PubMed ID: 37846516
[TBL] [Abstract][Full Text] [Related]
10. The interfacial properties of 2D metal-monolayer blue phosphorene heterojunctions and transport properties of their field-effect transistors.
Chen W; Lin X; Xu G; Zhong K; Zhang JM; Huang Z
J Phys Condens Matter; 2023 Dec; 36(12):. PubMed ID: 38056009
[TBL] [Abstract][Full Text] [Related]
11. Performance Limit of Ultrathin GaAs Transistors.
Li Q; Fang S; Liu S; Xu L; Xu L; Yang C; Yang J; Shi B; Ma J; Yang J; Quhe R; Lu J
ACS Appl Mater Interfaces; 2022 May; ():. PubMed ID: 35575689
[TBL] [Abstract][Full Text] [Related]
12. Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.
Wang J; Cai Q; Lei J; Yang G; Xue J; Chen D; Liu B; Lu H; Zhang R; Zheng Y
ACS Appl Mater Interfaces; 2019 Jun; 11(23):20956-20964. PubMed ID: 31046216
[TBL] [Abstract][Full Text] [Related]
13. Sub-5 nm Ultrathin In
Xu L; Xu L; Lan J; Li Y; Li Q; Wang A; Guo Y; Ang YS; Quhe R; Lu J
ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38676632
[TBL] [Abstract][Full Text] [Related]
14. Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device.
Guo Y; Pan F; Zhao G; Ren Y; Yao B; Li H; Lu J
Nanoscale; 2020 Jul; 12(28):15443-15452. PubMed ID: 32662491
[TBL] [Abstract][Full Text] [Related]
15. Sub-5 nm monolayer black phosphorene tunneling transistors.
Li H; Shi B; Pan Y; Li J; Xu L; Xu L; Zhang Z; Pan F; Lu J
Nanotechnology; 2018 Nov; 29(48):485202. PubMed ID: 30207546
[TBL] [Abstract][Full Text] [Related]
16. One dimensional MOSFETs for sub-5 nm high-performance applications: a case of Sb
Tan X; Li Q; Ren D
Phys Chem Chem Phys; 2023 Jan; 25(3):2056-2062. PubMed ID: 36546566
[TBL] [Abstract][Full Text] [Related]
17. High-performance sub-10 nm monolayer Bi
Quhe R; Liu J; Wu J; Yang J; Wang Y; Li Q; Li T; Guo Y; Yang J; Peng H; Lei M; Lu J
Nanoscale; 2019 Jan; 11(2):532-540. PubMed ID: 30543242
[TBL] [Abstract][Full Text] [Related]
18. Electronic structure and transport properties of 2D RhTeCl: a NEGF-DFT study.
Qu H; Guo S; Zhou W; Cai B; Zhang S; Huang Y; Li Z; Chen X; Zeng H
Nanoscale; 2019 Nov; 11(43):20461-20466. PubMed ID: 31638130
[TBL] [Abstract][Full Text] [Related]
19. Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications.
Yin Y; Zhang Z; Zhong H; Shao C; Wan X; Zhang C; Robertson J; Guo Y
ACS Appl Mater Interfaces; 2021 Jan; 13(2):3387-3396. PubMed ID: 33404208
[TBL] [Abstract][Full Text] [Related]
20. Quantum transport simulations of sub-5 nm bilayer Ga
Li P; Dong L; Peng B; Nan K; Liu W
J Phys Condens Matter; 2023 Oct; 36(3):. PubMed ID: 37802063
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
