128 related articles for article (PubMed ID: 38805008)
1. Mechanisms of acid generation from ionic photoacid generators for extreme ultraviolet and electron beam lithography.
Fu C; Du K; Xue J; Xin H; Zhang J; Li H
Phys Chem Chem Phys; 2024 May; ():. PubMed ID: 38805008
[TBL] [Abstract][Full Text] [Related]
2. Exceptional Lithography Sensitivity Boosted by Hexafluoroisopropanols in Photoresists.
Liu J; Wang D; Li Y; Wang H; Chen H; Wang Q; Kang W
Polymers (Basel); 2024 Mar; 16(6):. PubMed ID: 38543430
[TBL] [Abstract][Full Text] [Related]
3. Synthesis of novel photoacid generator containing resist polymer for electron beam lithography.
Lee KE; Kim MJ; Yool JB; Mondkar HS; Sohn K; Lee H
J Nanosci Nanotechnol; 2012 Jan; 12(1):725-9. PubMed ID: 22524047
[TBL] [Abstract][Full Text] [Related]
4. Synthesis of End-Cap Enabled Self-Immolative Photoresists For Extreme Ultraviolet Lithography.
Deng J; Bailey S; Ai R; Delmonico A; Denbeaux G; Jiang S; Ober CK
ACS Macro Lett; 2022 Sep; 11(9):1049-1054. PubMed ID: 35948019
[TBL] [Abstract][Full Text] [Related]
5. Beyond EUV lithography: a comparative study of efficient photoresists' performance.
Mojarad N; Gobrecht J; Ekinci Y
Sci Rep; 2015 Mar; 5():9235. PubMed ID: 25783209
[TBL] [Abstract][Full Text] [Related]
6. Enhanced Acid Diffusion Control by Using Photoacid Generator Bound Polymer Resist.
Jung JH; Kim MJ; Sohn KH; Kang HN; Kang MK; Lee H
J Nanosci Nanotechnol; 2015 Feb; 15(2):1764-6. PubMed ID: 26353729
[TBL] [Abstract][Full Text] [Related]
7. Modular Synthesis of Phthalaldehyde Derivatives Enabling Access to Photoacid Generator-Bound Self-Immolative Polymer Resists with Next-Generation Photolithographic Properties.
Deng J; Bailey S; Jiang S; Ober CK
J Am Chem Soc; 2022 Oct; 144(42):19508-19520. PubMed ID: 36208192
[TBL] [Abstract][Full Text] [Related]
8. Design and performance of EUV resist containing photoacid generator for sub-100 nm lithography.
Thiyagarajan M; Gonsalves KE; Dean K; Sykes CH
J Nanosci Nanotechnol; 2005 Jul; 5(7):1181-3. PubMed ID: 16108447
[TBL] [Abstract][Full Text] [Related]
9. Mean Free Path of Electrons in Organic Photoresists for Extreme Ultraviolet Lithography in the Kinetic Energy Range 20-450 eV.
Fallica R; Mahne N; Conard T; Vanleenhove A; de Simone D; Nannarone S
ACS Appl Mater Interfaces; 2023 Jul; 15(29):35483-35494. PubMed ID: 37449783
[TBL] [Abstract][Full Text] [Related]
10. Novel Mechanism-Based Descriptors for Extreme Ultraviolet-Induced Photoacid Generation: Key Factors Affecting Extreme Ultraviolet Sensitivity.
Park JY; Song HJ; Nguyen TC; Son WJ; Kim D; Song G; Hong SK; Go H; Park C; Jang I; Kim DS
Molecules; 2023 Aug; 28(17):. PubMed ID: 37687074
[TBL] [Abstract][Full Text] [Related]
11. The effect of hydrophilic photoacid generator on acid diffusion in chemical amplification resists.
Kang HN; Jung JH; Joo HS; Seo DC; Lee H
J Nanosci Nanotechnol; 2014 Dec; 14(12):9662-4. PubMed ID: 25971116
[TBL] [Abstract][Full Text] [Related]
12. Theoretical Insights into the Solubility Polarity Switch of Metal-Organic Nanoclusters for Nanoscale Patterning.
Wang Q; Vockenhuber M; Cui H; Wang X; Tao P; Hu Z; Zhao J; Wang J; Ekinci Y; Xu H; He X
Small Methods; 2023 Oct; 7(10):e2300309. PubMed ID: 37337380
[TBL] [Abstract][Full Text] [Related]
13. Dissociative photoionization of phenyl triflate, a photoacid generator for photolithography, at 92 eV.
Laffert V; Sajjadian FS; Richter R; van Setten MJ; Holzmeier F
J Chem Phys; 2024 Apr; 160(13):. PubMed ID: 38557851
[TBL] [Abstract][Full Text] [Related]
14. On-wafer spectrofluorometric method for determination of relative quantum yields of photoacid generation in chemically amplified resists.
Feke GD; Grober RD; Pohlers G; Moore K; Cameron JF
Anal Chem; 2001 Jul; 73(14):3472-80. PubMed ID: 11476250
[TBL] [Abstract][Full Text] [Related]
15. Fluorine-Rich Zinc Oxoclusters as Extreme Ultraviolet Photoresists: Chemical Reactions and Lithography Performance.
Thakur N; Vockenhuber M; Ekinci Y; Watts B; Giglia A; Mahne N; Nannarone S; Castellanos S; Brouwer AM
ACS Mater Au; 2022 May; 2(3):343-355. PubMed ID: 36855383
[TBL] [Abstract][Full Text] [Related]
16. Recent Advances in Positive Photoresists: Mechanisms and Fabrication.
Hassaan M; Saleem U; Singh A; Haque AJ; Wang K
Materials (Basel); 2024 May; 17(11):. PubMed ID: 38893815
[TBL] [Abstract][Full Text] [Related]
17. Resistless EUV lithography: Photon-induced oxide patterning on silicon.
Tseng LT; Karadan P; Kazazis D; Constantinou PC; Stock TJZ; Curson NJ; Schofield SR; Muntwiler M; Aeppli G; Ekinci Y
Sci Adv; 2023 Apr; 9(16):eadf5997. PubMed ID: 37075116
[TBL] [Abstract][Full Text] [Related]
18. Fundamental understanding of chemical processes in extreme ultraviolet resist materials.
Kostko O; Xu B; Ahmed M; Slaughter DS; Ogletree DF; Closser KD; Prendergast DG; Naulleau P; Olynick DL; Ashby PD; Liu Y; Hinsberg WD; Wallraff GM
J Chem Phys; 2018 Oct; 149(15):154305. PubMed ID: 30342450
[TBL] [Abstract][Full Text] [Related]
19. Chemically Amplified Molecular Glass Photoresist Regulated by 2-Aminoanthracene Additive for Electron Beam Lithography and Extreme Ultraviolet Lithography.
Zhang S; Chen L; Gao J; Cui X; Cong X; Guo X; Hu R; Wang S; Chen J; Li Y; Yang G
ACS Omega; 2023 Aug; 8(30):26739-26748. PubMed ID: 37546582
[TBL] [Abstract][Full Text] [Related]
20. Line edge roughness of a latent image in post-optical lithography.
Saeki A; Kozawa T; Tagawa S; Cao HB
Nanotechnology; 2006 Mar; 17(6):1543-6. PubMed ID: 26558555
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
