These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

127 related articles for article (PubMed ID: 38869541)

  • 1. Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process.
    Zhu X; Cao L; Wang G; Yin H
    Nanomaterials (Basel); 2024 May; 14(11):. PubMed ID: 38869541
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications.
    Chu CL; Hsu SH; Chang WY; Luo GL; Chen SH
    Sci Rep; 2023 Jun; 13(1):9433. PubMed ID: 37296220
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs.
    Gu J; Zhang Q; Wu Z; Yao J; Zhang Z; Zhu X; Wang G; Li J; Zhang Y; Cai Y; Xu R; Xu G; Xu Q; Yin H; Luo J; Wang W; Ye T
    Nanomaterials (Basel); 2021 Jan; 11(2):. PubMed ID: 33530292
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.
    Dhungana KB; Jaishi M; Pati R
    Nano Lett; 2016 Jul; 16(7):3995-4000. PubMed ID: 27280769
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs.
    Zhang JH; Huang QA; Yu H; Lei SY
    Sensors (Basel); 2009; 9(4):2746-59. PubMed ID: 22574043
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.
    Rigante S; Scarbolo P; Wipf M; Stoop RL; Bedner K; Buitrago E; Bazigos A; Bouvet D; Calame M; Schönenberger C; Ionescu AM
    ACS Nano; 2015 May; 9(5):4872-81. PubMed ID: 25817336
    [TBL] [Abstract][Full Text] [Related]  

  • 7. A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors.
    Yang J; Huang Z; Wang D; Liu T; Sun X; Qian L; Pan Z; Xu S; Wang C; Wu C; Xu M; Zhang DW
    Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374692
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS
    McGuire FA; Lin YC; Price K; Rayner GB; Khandelwal S; Salahuddin S; Franklin AD
    Nano Lett; 2017 Aug; 17(8):4801-4806. PubMed ID: 28691824
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Issues of nanoelectronics: a possible roadmap.
    Wang KL
    J Nanosci Nanotechnol; 2002; 2(3-4):235-66. PubMed ID: 12908252
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.
    Min SW; Lee HS; Choi HJ; Park MK; Nam T; Kim H; Ryu S; Im S
    Nanoscale; 2013 Jan; 5(2):548-51. PubMed ID: 23233087
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed.
    Hu Y; Xiang J; Liang G; Yan H; Lieber CM
    Nano Lett; 2008 Mar; 8(3):925-30. PubMed ID: 18251518
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Dependences of the electrical properties on the diameter and the doping concentration of the Si nanowire field effect transistors with a Schottky metal-semiconductor contact.
    You JH; Lee SH; You CH; Yu YS; Kim TW
    J Nanosci Nanotechnol; 2010 May; 10(5):3609-13. PubMed ID: 20359010
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power.
    Lin JT; Kuo CY
    Discov Nano; 2024 Jul; 19(1):108. PubMed ID: 38954140
    [TBL] [Abstract][Full Text] [Related]  

  • 14. First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.
    Li C; Zhu H; Zhang Y; Wang Q; Yin X; Li J; Wang G; Kong Z; Ai X; Xie L; Liu Y; Li Y; Huang W; Yan Z; Xiao Z; Radamson HH; Li J; Wang W
    Nano Lett; 2021 Jun; 21(11):4730-4737. PubMed ID: 34038143
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
    Zhang Q; Gu J; Xu R; Cao L; Li J; Wu Z; Wang G; Yao J; Zhang Z; Xiang J; He X; Kong Z; Yang H; Tian J; Xu G; Mao S; Radamson HH; Yin H; Luo J
    Nanomaterials (Basel); 2021 Mar; 11(3):. PubMed ID: 33808024
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics.
    Ju S; Lee K; Janes DB; Yoon MH; Facchetti A; Marks TJ
    Nano Lett; 2005 Nov; 5(11):2281-6. PubMed ID: 16277468
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials.
    Knobloch T; Selberherr S; Grasser T
    Nanomaterials (Basel); 2022 Oct; 12(20):. PubMed ID: 36296740
    [TBL] [Abstract][Full Text] [Related]  

  • 18. On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node.
    Wong H; Kakushima K
    Nanomaterials (Basel); 2022 May; 12(10):. PubMed ID: 35630961
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
    Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK
    ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Core-insulator embedded nanosheet field-effect transistor for suppressing device-to-device variations.
    Son D; Lee H; Kim H; Ahn JH; Kim S
    Sci Rep; 2024 Mar; 14(1):7462. PubMed ID: 38553560
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.