These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

132 related articles for article (PubMed ID: 38899561)

  • 1. Exploring Disturb Characteristics in 2D and 3D Ferroelectric NAND Memory Arrays for Next-Generation Memory Technology.
    Kim IJ; Choi J; Lee JS
    ACS Appl Mater Interfaces; 2024 Jul; 16(26):33763-33770. PubMed ID: 38899561
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Ferroelectric Transistors for Memory and Neuromorphic Device Applications.
    Kim IJ; Lee JS
    Adv Mater; 2023 Jun; 35(22):e2206864. PubMed ID: 36484488
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry.
    Choi H; Cho YH; Kim SH; Yang K; Park MH
    J Phys Chem Lett; 2024 Feb; 15(4):983-997. PubMed ID: 38252652
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability.
    Kim IJ; Lee JS
    Small; 2024 Mar; 20(13):e2306871. PubMed ID: 37967323
    [TBL] [Abstract][Full Text] [Related]  

  • 5. CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory.
    Kim MK; Kim IJ; Lee JS
    Sci Adv; 2021 Jan; 7(3):. PubMed ID: 33523886
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing.
    Zhao Z; Kang J; Tunga A; Ryu H; Shukla A; Rakheja S; Zhu W
    ACS Nano; 2024 Jan; 18(4):2763-2771. PubMed ID: 38232763
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories.
    Chen F; Chen B; Lin H; Kong Y; Liu X; Zhan X; Chen J
    Micromachines (Basel); 2021 Sep; 12(10):. PubMed ID: 34683203
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors.
    Kim IJ; Lee JS
    Sci Adv; 2024 Jun; 10(23):eadn1345. PubMed ID: 38848373
    [TBL] [Abstract][Full Text] [Related]  

  • 9. A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory.
    You K; Jin L; Jia J; Huo Z
    Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398952
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors.
    Fan H; Tian X; Peng H; Shen Y; Li L; Li M; Gao L
    Sensors (Basel); 2023 Mar; 23(6):. PubMed ID: 36991921
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Channel Modeling and Quantization Design for 3D NAND Flash Memory.
    Wang C; Mei Z; Li J; Shu F; He X; Kong L
    Entropy (Basel); 2023 Jun; 25(7):. PubMed ID: 37509912
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Impact of Program-Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability.
    Zheng X; Wu Y; Dong H; Liu Y; Sang P; Xiao L; Zhan X
    Micromachines (Basel); 2024 Aug; 15(9):. PubMed ID: 39337720
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Enhancement of the Electrical Characteristics for 3D NAND Flash Memory Devices Due to a Modified Cell Structure in the Gate Region.
    Lee YG; Jung HS; Kim TW
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6148-6151. PubMed ID: 31026926
    [TBL] [Abstract][Full Text] [Related]  

  • 14. A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory.
    Jia J; Jin L; Jia X; You K
    Micromachines (Basel); 2023 Apr; 14(4):. PubMed ID: 37421129
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read.
    Mulaosmanovic H; Kleimaier D; Dünkel S; Beyer S; Mikolajick T; Slesazeck S
    Nanoscale; 2021 Oct; 13(38):16258-16266. PubMed ID: 34549741
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory.
    Jung WJ; Park JY
    Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832709
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate.
    Zhao Z; Woo S; Aabrar KA; Kirtania SG; Jiang Z; Deng S; Xiao Y; Mulaosmanovic H; Duenkel S; Kleimaier D; Soss S; Beyer S; Joshi R; Meninger S; Mohamed M; Kim K; Woo J; Lim S; Kim K; Kim W; Ha D; Narayanan V; Datta S; Yu S; Ni K
    ACS Appl Mater Interfaces; 2024 Oct; ():. PubMed ID: 39374172
    [TBL] [Abstract][Full Text] [Related]  

  • 18. A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories.
    Favalli M; Zambelli C; Marelli A; Micheloni R; Olivo P
    Micromachines (Basel); 2021 Jun; 12(7):. PubMed ID: 34199140
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory.
    Go D; Yoon G; Park J; Kim D; Kim J; Kim J; Lee JS
    Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004865
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Review of neuromorphic computing based on NAND flash memory.
    Lee ST; Lee JH
    Nanoscale Horiz; 2024 Aug; 9(9):1475-1492. PubMed ID: 39015048
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.