These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

113 related articles for article (PubMed ID: 38921882)

  • 21. Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets.
    Chen K; Yang J; Liu T; Wang D; Xu M; Wu C; Wang C; Xu S; Zhang DW; Liu W
    Micromachines (Basel); 2022 Jul; 13(7):. PubMed ID: 35888897
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.
    Min SW; Lee HS; Choi HJ; Park MK; Nam T; Kim H; Ryu S; Im S
    Nanoscale; 2013 Jan; 5(2):548-51. PubMed ID: 23233087
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node.
    Hong J; Park J; Lee J; Ham J; Park K; Jeon J
    Micromachines (Basel); 2019 Dec; 10(12):. PubMed ID: 31817178
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process.
    Zhu X; Cao L; Wang G; Yin H
    Nanomaterials (Basel); 2024 May; 14(11):. PubMed ID: 38869541
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network.
    Zhao Y; Xu Z; Tang H; Zhao Y; Tang P; Ding R; Zhu X; Zhang DW; Yu S
    Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398948
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example.
    Wei Z; Fu H; Yan X; Li S; Zhang L; Wei J; Liu S; Sun W; Wu W; Bai S
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057175
    [TBL] [Abstract][Full Text] [Related]  

  • 27. 2D Materials-Based Static Random-Access Memory.
    Liu CJ; Wan Y; Li LJ; Lin CP; Hou TH; Huang ZY; Hu VP
    Adv Mater; 2022 Dec; 34(48):e2107894. PubMed ID: 34932857
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors.
    Li X; Shao Y; Wang Y; Liu F; Kuang F; Zhuang Y; Li C
    Micromachines (Basel); 2024 Mar; 15(3):. PubMed ID: 38542667
    [TBL] [Abstract][Full Text] [Related]  

  • 29. First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.
    Li C; Zhu H; Zhang Y; Wang Q; Yin X; Li J; Wang G; Kong Z; Ai X; Xie L; Liu Y; Li Y; Huang W; Yan Z; Xiao Z; Radamson HH; Li J; Wang W
    Nano Lett; 2021 Jun; 21(11):4730-4737. PubMed ID: 34038143
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Stability evaluation of ZnO nanosheet based source-gated transistors.
    Dahiya AS; Sporea RA; Poulin-Vittrant G; Alquier D
    Sci Rep; 2019 Feb; 9(1):2979. PubMed ID: 30814622
    [TBL] [Abstract][Full Text] [Related]  

  • 31. A Review of Reliability in Gate-All-Around Nanosheet Devices.
    Wang M
    Micromachines (Basel); 2024 Feb; 15(2):. PubMed ID: 38398997
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?
    Xu L; Yang J; Qiu C; Liu S; Zhou W; Li Q; Shi B; Ma J; Yang C; Lu J; Zhang Z
    ACS Appl Mater Interfaces; 2021 Jul; 13(27):31957-31967. PubMed ID: 34210135
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Voltage-Controlled Ring Oscillators Based on Inkjet Printed Carbon Nanotubes and Zinc Tin Oxide.
    Kim B; Park J; Geier ML; Hersam MC; Dodabalapur A
    ACS Appl Mater Interfaces; 2015 Jun; 7(22):12009-14. PubMed ID: 25966019
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Gate Spacer Investigation for Improving the Speed of High-Frequency Carbon Nanotube-Based Field-Effect Transistors.
    Hartmann M; Tittmann-Otto J; Böttger S; Heldt G; Claus M; Schulz SE; Schröter M; Hermann S
    ACS Appl Mater Interfaces; 2020 Jun; 12(24):27461-27466. PubMed ID: 32436374
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Origins and characteristics of the threshold voltage variability of quasiballistic single-walled carbon nanotube field-effect transistors.
    Cao Q; Han SJ; Penumatcha AV; Frank MM; Tulevski GS; Tersoff J; Haensch WE
    ACS Nano; 2015 Feb; 9(2):1936-44. PubMed ID: 25652208
    [TBL] [Abstract][Full Text] [Related]  

  • 36. The Impacts of Contact Etch Stop Layer Thickness and Gate Height on Channel Stress in Strained N-Metal Oxide Semiconductor Field Effect Transistors.
    Lin KC; Twu MJ; Deng RH; Liu CH
    J Nanosci Nanotechnol; 2015 Apr; 15(4):2673-9. PubMed ID: 26353480
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
    Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
    Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Electro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode.
    Ramesh P; Itkis ME; Bekyarova E; Wang F; Niyogi S; Chi X; Berger C; de Heer W; Haddon RC
    J Am Chem Soc; 2010 Oct; 132(41):14429-36. PubMed ID: 20873843
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Comparing solution-gate and bottom-gate nanowire field-effect transistors on pH sensing with different salt concentrations and surface modifications.
    Hu WP; Yang YQ; Lee CH; Vu CA; Chen WY
    Talanta; 2024 May; 271():125731. PubMed ID: 38309116
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs.
    Kim MK; Choi YK; Park JY
    Micromachines (Basel); 2022 Jan; 13(1):. PubMed ID: 35056288
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 6.