These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

122 related articles for article (PubMed ID: 38930672)

  • 1. Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs.
    Wei H; Liu H; Wang S; Chen S; Yin C; Chen Y; Gao T
    Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930672
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET.
    Yang Y; Liu H; Yang K; Gao Z; Liu Z
    Micromachines (Basel); 2022 May; 13(5):. PubMed ID: 35630275
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit.
    Gao T; Yin C; Chen Y; Chen R; Yan C; Liu H
    Micromachines (Basel); 2023 Jul; 14(7):. PubMed ID: 37512749
    [TBL] [Abstract][Full Text] [Related]  

  • 4. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La
    Mah SK; Ker PJ; Ahmad I; Zainul Abidin NF; Ali Gamel MM
    Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34640118
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effects of gate stack structural and process defectivity on high-k dielectric dependence of NBTI reliability in 32 nm technology node PMOSFETs.
    Hussin H; Soin N; Bukhori MF; Hatta SW; Wahab YA
    ScientificWorldJournal; 2014; 2014():490829. PubMed ID: 25221784
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
    Chang SJ; Kim DS; Kim TW; Bae Y; Jung HW; Choi IG; Noh YS; Lee SH; Kim SI; Ahn HK; Kang DM; Lim JW
    Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903774
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices.
    Yang J; Liu H; Yang K
    Micromachines (Basel); 2022 Aug; 13(9):. PubMed ID: 36144057
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor.
    Yoon C; Moon S; Shin C
    Nano Converg; 2020 Jun; 7(1):19. PubMed ID: 32483648
    [TBL] [Abstract][Full Text] [Related]  

  • 9. The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation.
    Kim C; Yoon H; Park Y; Kim S; Kang G; Kim DS; Seok O
    Micromachines (Basel); 2024 Apr; 15(4):. PubMed ID: 38675307
    [TBL] [Abstract][Full Text] [Related]  

  • 10. An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices.
    Lu Y; Liu H
    Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241707
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures.
    Ma Y; Bi J; Wang H; Fan L; Zhao B; Shen L; Liu M
    Nanomaterials (Basel); 2022 Dec; 12(23):. PubMed ID: 36500968
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors.
    Li X; Shao Y; Wang Y; Liu F; Kuang F; Zhuang Y; Li C
    Micromachines (Basel); 2024 Mar; 15(3):. PubMed ID: 38542667
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress.
    Kim SS; Choi PH; Baek DH; Lee JH; Choi BD
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7555-8. PubMed ID: 26726370
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Combined Effect of TID Radiation and Electrical Stress on NMOSFETs.
    Cao Y; Wang M; Zheng X; Zhang E; Lv L; Wang L; Ma M; Lv H; Wang Z; Wang Y; Tian W; Ma X; Hao Y
    Micromachines (Basel); 2022 Oct; 13(11):. PubMed ID: 36363882
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Prediction of electrical properties of FDSOI devices based on deep learning.
    Zhao R; Wang S; Duan X; Liu C; Ma L; Chen S; Liu H
    Nanotechnology; 2022 May; 33(33):. PubMed ID: 35508081
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET.
    Chong C; Liu H; Wang S; Wu X
    Micromachines (Basel); 2021 Oct; 12(10):. PubMed ID: 34683283
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Prediction of Single-Event Effects in FDSOI Devices Based on Deep Learning.
    Zhao R; Wang S; Du S; Pan J; Ma L; Chen S; Liu H; Chen Y
    Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984911
    [TBL] [Abstract][Full Text] [Related]  

  • 18. 4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses.
    Anoldo L; Zanetti E; Coco W; Russo A; Fiorenza P; Roccaforte F
    Materials (Basel); 2024 Apr; 17(8):. PubMed ID: 38673265
    [TBL] [Abstract][Full Text] [Related]  

  • 19. An ionizing radiation sensor using a pre-programmed MAHAOS device.
    Hsieh WC; Lee HT; Jong FC
    Sensors (Basel); 2014 Aug; 14(8):14553-66. PubMed ID: 25116901
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Evaluation on Temperature-Dependent Transient
    Wang R; Guo H; Hou Q; Lei J; Wang J; Xue J; Liu B; Chen D; Lu H; Zhang R; Zheng Y
    Micromachines (Basel); 2022 Jul; 13(7):. PubMed ID: 35888913
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.