These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

114 related articles for article (PubMed ID: 38930729)

  • 21. Online Recognition of Fallen-Off Bond Wires in IGBT Modules.
    Hu Z; Cui M; Shi T
    Micromachines (Basel); 2024 Mar; 15(3):. PubMed ID: 38542651
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Thermal Performance Optimization of Integrated Microchannel Cooling Plate for IGBT Power Module.
    Xu H; Huang J; Tian W; Li Z
    Micromachines (Basel); 2023 Jul; 14(8):. PubMed ID: 37630033
    [TBL] [Abstract][Full Text] [Related]  

  • 23. A Study on Real Time IGBT Junction Temperature Estimation Using the NTC and Calculation of Power Losses in the Automotive Inverter System.
    Lim H; Hwang J; Kwon S; Baek H; Uhm J; Lee G
    Sensors (Basel); 2021 Apr; 21(7):. PubMed ID: 33918142
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Integrated Rogowski Coil Sensor for Press-Pack Insulated Gate Bipolar Transistor Chips.
    Jiao C; Zhang Z; Zhao Z; Zhang X
    Sensors (Basel); 2020 Jul; 20(15):. PubMed ID: 32707875
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data.
    Liu Z; Mei W; Zeng X; Yang C; Zhou X
    Sensors (Basel); 2017 Nov; 17(11):. PubMed ID: 29099811
    [TBL] [Abstract][Full Text] [Related]  

  • 26. A compact 1200 V, 700 A, IGBT-based pulse generator for repetitive transcranial magnetic stimulation in vivo laboratory experiments on small animals.
    Senda D; Strong H; Hines D; Hines R; Baker RJ
    Rev Sci Instrum; 2021 Aug; 92(8):084710. PubMed ID: 34470408
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Digital-Twin-Driven Intelligent Insulated-Gate Bipolar Transistor Production Lines.
    Zhang X; Liu X; Song Y; Li X; Huang W; Zhou Y; Liu S
    Sensors (Basel); 2024 Jan; 24(2):. PubMed ID: 38257704
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Prediction of IGBT Gate Oxide Layer's Performance Degradation Based on MultiScaleFormer Network.
    He S; Yu M; Chen Y; Zhou Z; Yu L; Zhang C; Ni Y
    Micromachines (Basel); 2024 Jul; 15(8):. PubMed ID: 39203636
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Performance Degradation Modeling and Its Prediction Algorithm of an IGBT Gate Oxide Layer Based on a CNN-LSTM Network.
    Wang X; Zhou Z; He S; Liu J; Cui W
    Micromachines (Basel); 2023 Apr; 14(5):. PubMed ID: 37241583
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation.
    Sheu G; Song YL; Mogarala R; Susmitha D; Issac K
    Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208294
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Achieving High Current Stability of Gated Carbon Nanotube Cold Cathode Electron Source Using IGBT Modulation for X-ray Source Application.
    Guo Y; Wang J; Li B; Zhang Y; Deng S; Chen J
    Nanomaterials (Basel); 2022 May; 12(11):. PubMed ID: 35683737
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Normally-off β-Ga
    Jang CH; Atmaca G; Cha HY
    Micromachines (Basel); 2022 Jul; 13(8):. PubMed ID: 36014107
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Macro-Mesoscale Modeling of the Evolution of the Surface Roughness of the Al Metallization Layer of an IGBT Module during Power Cycling.
    An T; Zheng X; Qin F; Dai Y; Gong Y; Chen P
    Materials (Basel); 2023 Feb; 16(5):. PubMed ID: 36903051
    [TBL] [Abstract][Full Text] [Related]  

  • 34. A Novel Asymmetric Trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance.
    Yu Y; Cheng Z; Hu Y; Lv R; Hu S
    Micromachines (Basel); 2024 Mar; 15(4):. PubMed ID: 38675272
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Potential Fault Diagnosis Method and Classification Accuracy Detection of IGBT Device Based on Improved Single Hidden Layer Feedforward Neural Network.
    Wu J; Chen X; Zhang Z
    Comput Intell Neurosci; 2021; 2021():6036118. PubMed ID: 34630549
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Novel Spiral Silicon Drift Detector with Equal Cathode Ring Gap and Given Surface Electric Fields.
    Sun J; Li Z; Li X; Li X; Cai X; Tan Z; Liu M; Wang H
    Micromachines (Basel); 2022 Oct; 13(10):. PubMed ID: 36296035
    [TBL] [Abstract][Full Text] [Related]  

  • 37. A Novel AlGaN/Si
    Guo J; Hu S; Li P; Jiang J; Wang R; Wang Y; Wu H
    Micromachines (Basel); 2022 Mar; 13(3):. PubMed ID: 35334756
    [TBL] [Abstract][Full Text] [Related]  

  • 38. A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness.
    Qian Z; Cui W; Feng T; Xu H; Yang Y; Sun Q; Zhang DW
    Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930650
    [TBL] [Abstract][Full Text] [Related]  

  • 39. A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system.
    Jiang J; Ma GM; Luo DP; Li CR; Li QM; Wang W
    Rev Sci Instrum; 2014 Feb; 85(2):024706. PubMed ID: 24593382
    [TBL] [Abstract][Full Text] [Related]  

  • 40. A simulation based case study for control of DSTATCOM.
    Kumar P; Kumar N; Akella AK
    ISA Trans; 2014 May; 53(3):767-75. PubMed ID: 24656282
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 6.