These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
144 related articles for article (PubMed ID: 38933762)
1. HfO Liao J; Dai S; Peng RC; Yang J; Zeng B; Liao M; Zhou Y Fundam Res; 2023 May; 3(3):332-345. PubMed ID: 38933762 [TBL] [Abstract][Full Text] [Related]
2. A perspective on the physical scaling down of hafnia-based ferroelectrics. Park JY; Lee DH; Park GH; Lee J; Lee Y; Park MH Nanotechnology; 2023 Feb; 34(20):. PubMed ID: 36745914 [TBL] [Abstract][Full Text] [Related]
3. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Park MH; Lee YH; Kim HJ; Kim YJ; Moon T; Kim KD; Müller J; Kersch A; Schroeder U; Mikolajick T; Hwang CS Adv Mater; 2015 Mar; 27(11):1811-31. PubMed ID: 25677113 [TBL] [Abstract][Full Text] [Related]
4. Ferroelectric Transistors for Memory and Neuromorphic Device Applications. Kim IJ; Lee JS Adv Mater; 2023 Jun; 35(22):e2206864. PubMed ID: 36484488 [TBL] [Abstract][Full Text] [Related]
6. Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures. Kho W; Hwang H; Kim J; Park G; Ahn SE Nanomaterials (Basel); 2023 Jan; 13(3):. PubMed ID: 36770400 [TBL] [Abstract][Full Text] [Related]
7. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications. Kundu S; Maurya D; Clavel M; Zhou Y; Halder NN; Hudait MK; Banerji P; Priya S Sci Rep; 2015 Feb; 5():8494. PubMed ID: 25683062 [TBL] [Abstract][Full Text] [Related]
8. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide. Lee J; Yang K; Kwon JY; Kim JE; Han DI; Lee DH; Yoon JH; Park MH Nano Converg; 2023 Dec; 10(1):55. PubMed ID: 38038784 [TBL] [Abstract][Full Text] [Related]
9. Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics. Park JY; Choe DH; Lee DH; Yu GT; Yang K; Kim SH; Park GH; Nam SG; Lee HJ; Jo S; Kuh BJ; Ha D; Kim Y; Heo J; Park MH Adv Mater; 2023 Oct; 35(43):e2204904. PubMed ID: 35952355 [TBL] [Abstract][Full Text] [Related]
10. Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO Dai S; Yang Q; Zeng B; Zheng S; Zhong X; Xiang J; Gao J; Zhao J; Liao J; Liao M; Zhou Y ACS Appl Mater Interfaces; 2022 Nov; 14(45):51459-51467. PubMed ID: 36318591 [TBL] [Abstract][Full Text] [Related]
11. Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices. Jayakrishnan AR; Kim JS; Hellenbrand M; Marques LS; MacManus-Driscoll JL; Silva JPB Mater Horiz; 2024 May; 11(10):2355-2371. PubMed ID: 38477152 [TBL] [Abstract][Full Text] [Related]
12. A review of ultra-thin ferroelectric films. Yuan ZL; Sun Y; Wang D; Chen KQ; Tang LM J Phys Condens Matter; 2021 Jul; 33(40):. PubMed ID: 34261050 [TBL] [Abstract][Full Text] [Related]
13. Highly enhanced ferroelectricity in HfO Kang S; Jang WS; Morozovska AN; Kwon O; Jin Y; Kim YH; Bae H; Wang C; Yang SH; Belianinov A; Randolph S; Eliseev EA; Collins L; Park Y; Jo S; Jung MH; Go KJ; Cho HW; Choi SY; Jang JH; Kim S; Jeong HY; Lee J; Ovchinnikova OS; Heo J; Kalinin SV; Kim YM; Kim Y Science; 2022 May; 376(6594):731-738. PubMed ID: 35549417 [TBL] [Abstract][Full Text] [Related]
14. Si-Doped HfO Lee Y; Song S; Ham W; Ahn SE Materials (Basel); 2022 Mar; 15(6):. PubMed ID: 35329702 [TBL] [Abstract][Full Text] [Related]
15. Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited Kim HB; Jung M; Oh Y; Lee SW; Suh D; Ahn JH Nanoscale; 2021 May; 13(18):8524-8530. PubMed ID: 33908540 [TBL] [Abstract][Full Text] [Related]
16. Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO Lee TY; Lee K; Lim HH; Song MS; Yang SM; Yoo HK; Suh DI; Zhu Z; Yoon A; MacDonald MR; Lei X; Jeong HY; Lee D; Park K; Park J; Chae SC ACS Appl Mater Interfaces; 2019 Jan; 11(3):3142-3149. PubMed ID: 30592198 [TBL] [Abstract][Full Text] [Related]
17. Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges. Celano U; Gomez A; Piedimonte P; Neumayer S; Collins L; Popovici M; Florent K; McMitchell SRC; Favia P; Drijbooms C; Bender H; Paredis K; Di Piazza L; Jesse S; Van Houdt J; van der Heide P Nanomaterials (Basel); 2020 Aug; 10(8):. PubMed ID: 32796703 [TBL] [Abstract][Full Text] [Related]
18. Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO Xu B; Ganser R; Holsgrove KM; Wang X; Vishnumurthy P; Mikolajick T; Schroeder U; Kersch A; Lomenzo PD ACS Appl Mater Interfaces; 2024 Jun; 16(25):32533-32542. PubMed ID: 38873965 [TBL] [Abstract][Full Text] [Related]
19. Ferroelectric field-effect transistors based on HfO Mulaosmanovic H; Breyer ET; Dünkel S; Beyer S; Mikolajick T; Slesazeck S Nanotechnology; 2021 Sep; 32(50):. PubMed ID: 34320479 [TBL] [Abstract][Full Text] [Related]
20. Deterministic Orientation Control of Ferroelectric HfO Lee K; Park K; Choi IH; Cho JW; Song MS; Kim CH; Lee JH; Lee JS; Park J; Chae SC ACS Nano; 2024 May; 18(20):12707-12715. PubMed ID: 38733336 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]