These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

131 related articles for article (PubMed ID: 38970535)

  • 1. Optically Mediated Nonvolatile Resistive Memory Device Based on Metal-Organic Frameworks.
    Yang X; Huang J; Li J; Zhao Y; Li H; Yu Z; Gao S; Cao R
    Adv Mater; 2024 Jul; ():e2313608. PubMed ID: 38970535
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Metal-Organic Frameworks-Based Memristors: Materials, Devices, and Applications.
    Shu F; Chen X; Yu Z; Gao P; Liu G
    Molecules; 2022 Dec; 27(24):. PubMed ID: 36558025
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Resistive Memory Devices Based on Reticular Materials for Electrical Information Storage.
    Oh J; Yoon SM
    ACS Appl Mater Interfaces; 2021 Dec; 13(48):56777-56792. PubMed ID: 34842430
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Resistive Switching Memory Devices Based on Body Fluid of
    Wang L; Wen D
    Micromachines (Basel); 2019 Aug; 10(8):. PubMed ID: 31426438
    [TBL] [Abstract][Full Text] [Related]  

  • 5. A Robust Nonvolatile Resistive Memory Device Based on a Freestanding Ultrathin 2D Imine Polymer Film.
    Liu J; Yang F; Cao L; Li B; Yuan K; Lei S; Hu W
    Adv Mater; 2019 Jul; 31(28):e1902264. PubMed ID: 31099076
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.
    Qian K; Cai G; Nguyen VC; Chen T; Lee PS
    ACS Appl Mater Interfaces; 2016 Oct; 8(41):27885-27891. PubMed ID: 27704752
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Metal Ions Redox Induced Repeatable Nonvolatile Resistive Switching Memory Behavior in Biomaterials.
    Zheng L; Sun B; Mao S; Zhu S; Zheng P; Zhang Y; Lei M; Zhao Y
    ACS Appl Bio Mater; 2018 Aug; 1(2):496-501. PubMed ID: 35016395
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Solution-Processed Hydrogen-Bonded Organic Framework Nanofilms for High-Performance Resistive Memory Devices.
    Yang X; Huang J; Gao S; Zhao Y; Huang T; Li H; Liu T; Yu Z; Cao R
    Adv Mater; 2023 Nov; 35(47):e2305344. PubMed ID: 37540191
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Optoelectronic bio-synaptic plasticity on neotype kesterite memristor with switching ratio >104.
    Yang F; Wei W; Dong X; Zhao Y; Chen J; Chen J; Zhang X; Li Y
    J Chem Phys; 2023 Sep; 159(11):. PubMed ID: 37712793
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Statistical Analysis of Uniform Switching Characteristics of Ta
    Jin S; Kwon JD; Kim Y
    Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34771802
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Versatile Cu2ZnSnS4-based synaptic memristor for multi-field-regulated neuromorphic applications.
    Dong X; Sun H; Li S; Zhang X; Chen J; Zhang X; Zhao Y; Li Y
    J Chem Phys; 2024 Apr; 160(15):. PubMed ID: 38619459
    [TBL] [Abstract][Full Text] [Related]  

  • 12. High-Density, Nonvolatile, Flexible Multilevel Organic Memristor Using Multilayered Polymer Semiconductors.
    Sharma S; Pandey M; Nagamatsu S; Tanaka H; Takashima K; Nakamura M; Pandey SS
    ACS Appl Mater Interfaces; 2024 May; 16(17):22282-22293. PubMed ID: 38644562
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Room-Temperature Fabricated Multilevel Nonvolatile Lead-Free Cesium Halide Memristors for Reconfigurable In-Memory Computing.
    Su TK; Cheng WK; Chen CY; Wang WC; Chuang YT; Tan GH; Lin HC; Hou CH; Liu CM; Chang YC; Shyue JJ; Wu KC; Lin HW
    ACS Nano; 2022 Aug; 16(8):12979-12990. PubMed ID: 35815946
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications.
    Liao K; Lei P; Tu M; Luo S; Jiang T; Jie W; Hao J
    ACS Appl Mater Interfaces; 2021 Jul; 13(28):32606-32623. PubMed ID: 34253011
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Three-Dimensional Reconstruction of Conductive Filaments in HfO
    Wei T; Lu Y; Zhang F; Tang J; Gao B; Yu P; Qian H; Wu H
    Adv Mater; 2023 Mar; 35(10):e2209925. PubMed ID: 36517930
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Stable Resistive Switching in ZnO/PVA:MoS
    Sun T; Shi H; Gao S; Zhou Z; Yu Z; Guo W; Li H; Zhang F; Xu Z; Zhang X
    Nanomaterials (Basel); 2022 Jun; 12(12):. PubMed ID: 35745316
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications.
    Zhang X; Zhao X; Wang Z
    Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570491
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Ferroelectric tunnel memristor.
    Kim DJ; Lu H; Ryu S; Bark CW; Eom CB; Tsymbal EY; Gruverman A
    Nano Lett; 2012 Nov; 12(11):5697-702. PubMed ID: 23039785
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.
    Simanjuntak FM; Panda D; Wei KH; Tseng TY
    Nanoscale Res Lett; 2016 Dec; 11(1):368. PubMed ID: 27541816
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Air-Stable Lead-Free Perovskite Thin Film Based on CsBi
    Xiong Z; Hu W; She Y; Lin Q; Hu L; Tang X; Sun K
    ACS Appl Mater Interfaces; 2019 Aug; 11(33):30037-30044. PubMed ID: 31342747
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.