These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

107 related articles for article (PubMed ID: 39013074)

  • 1. Simulations of Anisotropic Monolayer GaSCl for p-Type Sub-10 nm High-Performance and Low-Power FETs.
    Shi H; Yang S; Wang H; Ding D; Hu Y; Qu H; Chen C; Hu X; Zhang S
    ACS Appl Mater Interfaces; 2024 Jul; 16(30):39592-39599. PubMed ID: 39013074
    [TBL] [Abstract][Full Text] [Related]  

  • 2. High-Performance and Low-Power
    Guo X; Hu X; Zhang S; Yang J; Chen C; Zhang J; Qu H; Zhang S; Zhou W
    ACS Appl Mater Interfaces; 2023 Nov; 15(46):53644-53650. PubMed ID: 37936317
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Sub-5 nm Ultrathin In
    Xu L; Xu L; Lan J; Li Y; Li Q; Wang A; Guo Y; Ang YS; Quhe R; Lu J
    ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38676632
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Performance Limit of Monolayer WSe
    Sun X; Xu L; Zhang Y; Wang W; Liu S; Yang C; Zhang Z; Lu J
    ACS Appl Mater Interfaces; 2020 May; 12(18):20633-20644. PubMed ID: 32285659
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Anisotropic Transport Property of Antimonene MOSFETs.
    Yin Y; Shao C; Zhang C; Zhang Z; Zhang X; Robertson J; Guo Y
    ACS Appl Mater Interfaces; 2020 May; 12(19):22378-22386. PubMed ID: 32320208
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.
    Wang J; Cai Q; Lei J; Yang G; Xue J; Chen D; Liu B; Lu H; Zhang R; Zheng Y
    ACS Appl Mater Interfaces; 2019 Jun; 11(23):20956-20964. PubMed ID: 31046216
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation.
    Yang S; Shi H; Hu Y; Si J; Chen C; Yang J; Qu H; Hu X; Zhang F; Zhang S
    J Phys Chem Lett; 2024 May; 15(21):5721-5727. PubMed ID: 38770896
    [TBL] [Abstract][Full Text] [Related]  

  • 8. First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga
    Ma Y; Dong L; Li P; Hu L; Lu B; Miao Y; Peng B; Tian A; Liu W
    ACS Appl Mater Interfaces; 2022 Oct; 14(42):48220-48228. PubMed ID: 36251772
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Sub-5 nm Monolayer Arsenene and Antimonene Transistors.
    Sun X; Song Z; Liu S; Wang Y; Li Y; Wang W; Lu J
    ACS Appl Mater Interfaces; 2018 Jul; 10(26):22363-22371. PubMed ID: 29877077
    [TBL] [Abstract][Full Text] [Related]  

  • 10. The interfacial properties of 2D metal-monolayer blue phosphorene heterojunctions and transport properties of their field-effect transistors.
    Chen W; Lin X; Xu G; Zhong K; Zhang JM; Huang Z
    J Phys Condens Matter; 2023 Dec; 36(12):. PubMed ID: 38056009
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device.
    Guo Y; Pan F; Zhao G; Ren Y; Yao B; Li H; Lu J
    Nanoscale; 2020 Jul; 12(28):15443-15452. PubMed ID: 32662491
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications.
    Yin Y; Zhang Z; Zhong H; Shao C; Wan X; Zhang C; Robertson J; Guo Y
    ACS Appl Mater Interfaces; 2021 Jan; 13(2):3387-3396. PubMed ID: 33404208
    [TBL] [Abstract][Full Text] [Related]  

  • 13. The device performance limit of in-plane monolayer VTe
    Tan X; Li Q; Ren D; Fu HH
    Nanoscale; 2023 Dec; 15(48):19726-19734. PubMed ID: 38047474
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Sub-5 nm monolayer black phosphorene tunneling transistors.
    Li H; Shi B; Pan Y; Li J; Xu L; Xu L; Zhang Z; Pan F; Lu J
    Nanotechnology; 2018 Nov; 29(48):485202. PubMed ID: 30207546
    [TBL] [Abstract][Full Text] [Related]  

  • 15. One dimensional MOSFETs for sub-5 nm high-performance applications: a case of Sb
    Tan X; Li Q; Ren D
    Phys Chem Chem Phys; 2023 Jan; 25(3):2056-2062. PubMed ID: 36546566
    [TBL] [Abstract][Full Text] [Related]  

  • 16. SiX
    Yan S; Wang K; Guo Z; Wu YN; Chen S
    Nano Lett; 2024 May; 24(20):6158-6164. PubMed ID: 38723204
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Sub-9 nm high-performance and low-power transistors based on an in-plane NbSe
    Cao ZL; Guo XH; Yao KL; Zhu L
    Nanoscale; 2023 Nov; 15(42):17029-17035. PubMed ID: 37846516
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Performance Limit of Ultrathin GaAs Transistors.
    Li Q; Fang S; Liu S; Xu L; Xu L; Yang C; Yang J; Shi B; Ma J; Yang J; Quhe R; Lu J
    ACS Appl Mater Interfaces; 2022 May; ():. PubMed ID: 35575689
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Promising ultra-short channel transistors based on OM
    Li X; Yuan P; Li L; Liu T; Shen C; Jiang Y; Song X; Li J; Xia C
    Nanoscale; 2022 Dec; 15(1):356-364. PubMed ID: 36503932
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Scaling of MoS
    Tian J; Wang Q; Huang X; Tang J; Chu Y; Wang S; Shen C; Zhao Y; Li N; Liu J; Ji Y; Huang B; Peng Y; Yang R; Yang W; Watanabe K; Taniguchi T; Bai X; Shi D; Du L; Zhang G
    Nano Lett; 2023 Apr; 23(7):2764-2770. PubMed ID: 37010357
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.