These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
3. Ferroelectric Transistors for Memory and Neuromorphic Device Applications. Kim IJ; Lee JS Adv Mater; 2023 Jun; 35(22):e2206864. PubMed ID: 36484488 [TBL] [Abstract][Full Text] [Related]
4. From Ferroelectric Material Optimization to Neuromorphic Devices. Mikolajick T; Park MH; Begon-Lours L; Slesazeck S Adv Mater; 2023 Sep; 35(37):e2206042. PubMed ID: 36017895 [TBL] [Abstract][Full Text] [Related]
5. Memristive and CMOS Devices for Neuromorphic Computing. Milo V; Malavena G; Monzio Compagnoni C; Ielmini D Materials (Basel); 2020 Jan; 13(1):. PubMed ID: 31906325 [TBL] [Abstract][Full Text] [Related]
6. Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices. Jayakrishnan AR; Kim JS; Hellenbrand M; Marques LS; MacManus-Driscoll JL; Silva JPB Mater Horiz; 2024 May; 11(10):2355-2371. PubMed ID: 38477152 [TBL] [Abstract][Full Text] [Related]
7. Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network. Seok H; Son S; Jathar SB; Lee J; Kim T Sensors (Basel); 2023 Mar; 23(6):. PubMed ID: 36991829 [TBL] [Abstract][Full Text] [Related]
8. In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory. Ou QF; Xiong BS; Yu L; Wen J; Wang L; Tong Y Materials (Basel); 2020 Aug; 13(16):. PubMed ID: 32785179 [TBL] [Abstract][Full Text] [Related]
9. Memristors for Neuromorphic Circuits and Artificial Intelligence Applications. Miranda E; Suñé J Materials (Basel); 2020 Feb; 13(4):. PubMed ID: 32093164 [TBL] [Abstract][Full Text] [Related]
10. Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence. Wang J; Zhuge X; Zhuge F Sci Technol Adv Mater; 2021 May; 22(1):326-344. PubMed ID: 34025215 [TBL] [Abstract][Full Text] [Related]
11. Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing. Liao J; Wen W; Wu J; Zhou Y; Hussain S; Hu H; Li J; Liaqat A; Zhu H; Jiao L; Zheng Q; Xie L ACS Nano; 2023 Mar; 17(6):6095-6102. PubMed ID: 36912657 [TBL] [Abstract][Full Text] [Related]
12. Effect of growth temperature on self-rectifying BaTiO Patil H; Rehman S; Kim H; Kadam KD; Khan MA; Khan K; Aziz J; Ismail M; Khan MF; Kim DK J Colloid Interface Sci; 2023 Dec; 652(Pt A):836-844. PubMed ID: 37625358 [TBL] [Abstract][Full Text] [Related]
13. Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application. Kho W; Park G; Kim J; Hwang H; Byun J; Kang Y; Kang M; Ahn SE Nanomaterials (Basel); 2022 Dec; 13(1):. PubMed ID: 36616024 [TBL] [Abstract][Full Text] [Related]
14. Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In-Memory Computing. Wang D; Wang P; Mondal S; Hu M; Wu Y; Ma T; Mi Z Adv Mater; 2023 May; 35(20):e2210628. PubMed ID: 36892539 [TBL] [Abstract][Full Text] [Related]
15. Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing. Kwak H; Kim N; Jeon S; Kim S; Woo J Nano Converg; 2024 Feb; 11(1):9. PubMed ID: 38416323 [TBL] [Abstract][Full Text] [Related]
16. Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing. Luo ZD; Zhang S; Liu Y; Zhang D; Gan X; Seidel J; Liu Y; Han G; Alexe M; Hao Y ACS Nano; 2022 Feb; 16(2):3362-3372. PubMed ID: 35147405 [TBL] [Abstract][Full Text] [Related]
17. Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics. Park JY; Choe DH; Lee DH; Yu GT; Yang K; Kim SH; Park GH; Nam SG; Lee HJ; Jo S; Kuh BJ; Ha D; Kim Y; Heo J; Park MH Adv Mater; 2023 Oct; 35(43):e2204904. PubMed ID: 35952355 [TBL] [Abstract][Full Text] [Related]
19. Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications. Byun J; Kho W; Hwang H; Kang Y; Kang M; Noh T; Kim H; Lee J; Kim HB; Ahn JH; Ahn SE Nanomaterials (Basel); 2023 Oct; 13(19):. PubMed ID: 37836345 [TBL] [Abstract][Full Text] [Related]
20. Polarization Pruning: Reliability Enhancement of Hafnia-Based Ferroelectric Devices for Memory and Neuromorphic Computing. Koo RH; Shin W; Kim J; Yim J; Ko J; Jung G; Im J; Park SH; Kim JJ; Cheema SS; Kwon D; Lee JH Adv Sci (Weinh); 2024 Nov; 11(43):e2407729. PubMed ID: 39324607 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]