These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

64 related articles for article (PubMed ID: 8518488)

  • 1. In-situ HVEM study of dopant dependent (113)-defect generation in silicon during 1-MeV electron irradiation.
    Romano-Rodriguez A; Vanhellemont J
    Microsc Res Tech; 1993 Jun; 25(2):181-2. PubMed ID: 8518488
    [No Abstract]   [Full Text] [Related]  

  • 2. Carrier relaxation and lattice heating dynamics in silicon revealed by femtosecond electron diffraction.
    Harb M; Ernstorfer R; Dartigalongue T; Hebeisen CT; Jordan RE; Miller RJ
    J Phys Chem B; 2006 Dec; 110(50):25308-13. PubMed ID: 17165976
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Depth-dependent imaging of individual dopant atoms in silicon.
    Voyles PM; Muller DA; Kirkland EJ
    Microsc Microanal; 2004 Apr; 10(2):291-300. PubMed ID: 15306055
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Formation of crystalline silicon in kaolinite by electron beam irradiation and in situ heating in the HVEM.
    Lee S; Kim YM; Kim YJ
    J Electron Microsc (Tokyo); 2007 Aug; 56(4):153-5. PubMed ID: 17951396
    [TBL] [Abstract][Full Text] [Related]  

  • 5. In situ reflection electron microscopy of Ge island nucleation on mesa structures.
    Ross FM; Kammler M; Walsh ME; Reuter MC
    Microsc Microanal; 2004 Feb; 10(1):105-11. PubMed ID: 15306072
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Patterning of DNA nanostructures on silicon surface by electron beam lithography of self-assembled monolayer.
    Zhang GJ; Tanii T; Funatsu T; Ohdomari I
    Chem Commun (Camb); 2004 Apr; (7):786-7. PubMed ID: 15045063
    [TBL] [Abstract][Full Text] [Related]  

  • 7. In situ growth and characterization of ultrahard thin films.
    Bengu E; Collazo-Davila C; Grozea D; Landree E; Widlow I; Guruz M; Marks LD
    Microsc Res Tech; 1998 Aug; 42(4):295-301. PubMed ID: 9779834
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Quantitative transmission electron microscopy analysis of the pressure of helium-filled cracks in implanted silicon.
    Tillmann K; Hging N; Trinkaus H; Luysberg M
    Microsc Microanal; 2004 Apr; 10(2):199-214. PubMed ID: 15306046
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Direct UHV-TEM observation of palladium clusters on a silicon surface.
    Takeguchi M; Mitsuishi K; Tanaka M; Furuya K
    Microsc Microanal; 2004 Feb; 10(1):134-8. PubMed ID: 15306077
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Structure analysis of defects in nanometer space inside a crystal: creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy.
    Takeda S
    Microsc Res Tech; 1998 Feb; 40(4):313-35. PubMed ID: 9523763
    [TBL] [Abstract][Full Text] [Related]  

  • 11. In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si.
    Ross FM; Tersoff J; Reuter M; Legoues FK; Tromp RM
    Microsc Res Tech; 1998 Aug; 42(4):281-94. PubMed ID: 9779833
    [TBL] [Abstract][Full Text] [Related]  

  • 12. An in situ nanoindentation specimen holder for a high voltage transmission electron microscope.
    Wall MA; Dahmen U
    Microsc Res Tech; 1998 Aug; 42(4):248-54. PubMed ID: 9779829
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Neutron spectrometry with a monolithic silicon telescope.
    Agosteo S; D'Angelo G; Fazzi A; Para AF; Pola A; Zotto P
    Radiat Prot Dosimetry; 2007; 126(1-4):210-7. PubMed ID: 17522037
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Realization of atomically controlled dopant devices in silicon.
    Ruess FJ; Pok W; Reusch TC; Butcher MJ; Goh KE; Oberbeck L; Scappucci G; Hamilton AR; Simmons MY
    Small; 2007 Apr; 3(4):563-7. PubMed ID: 17340667
    [No Abstract]   [Full Text] [Related]  

  • 15. A solid state microdosimeter based on a monolithic silicon telescope.
    Agosteo S; Colautti P; Fazzi A; Moro D; Pola A
    Radiat Prot Dosimetry; 2006; 122(1-4):382-6. PubMed ID: 17151010
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Thermoluminescence emission spectra for the LiF:Mg,Cu,Na,Si thermoluminescent materials with various concentrations of the dopants (3-D measurement).
    Lee JI; Lee D; Kim JL; Chang SY
    Radiat Prot Dosimetry; 2006; 119(1-4):293-9. PubMed ID: 16644972
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Limitations of silicon diodes for clinical electron dosimetry.
    Song H; Ahmad M; Deng J; Chen Z; Yue NJ; Nath R
    Radiat Prot Dosimetry; 2006; 120(1-4):56-9. PubMed ID: 16772305
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Heat- and electron-beam-induced transport of gold particles into silicon oxide and silicon studied by in situ high-resolution transmission electron microscopy.
    Biskupek J; Kaiser U; Falk F
    J Electron Microsc (Tokyo); 2008 Jun; 57(3):83-9. PubMed ID: 18504308
    [TBL] [Abstract][Full Text] [Related]  

  • 19. [Surface Ramam spectropscopy for in situ investigating silicon etching process].
    Liu F; Ren B; Tian Z
    Guang Pu Xue Yu Guang Pu Fen Xi; 2000 Dec; 20(6):833-5. PubMed ID: 12938485
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Active pixel sensor array as a detector for electron microscopy.
    Milazzo AC; Leblanc P; Duttweiler F; Jin L; Bouwer JC; Peltier S; Ellisman M; Bieser F; Matis HS; Wieman H; Denes P; Kleinfelder S; Xuong NH
    Ultramicroscopy; 2005 Sep; 104(2):152-9. PubMed ID: 15890445
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 4.