These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

383 related articles for article (PubMed ID: 9703504)

  • 1. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes.
    Nakamura S
    Science; 1998 Aug; 281(5379):955-61. PubMed ID: 9703504
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes.
    Park AH; Baek S; Kim YW; Chandramohan S; Suh EK; Seo TH
    PLoS One; 2022; 17(11):e0277667. PubMed ID: 36395163
    [TBL] [Abstract][Full Text] [Related]  

  • 3. GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.
    Sheu JK; Chen FB; Yen WY; Wang YC; Liu CN; Yeh YH; Lee ML
    Opt Express; 2015 Apr; 23(7):A371-81. PubMed ID: 25968802
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates.
    Li H; Khoury M; Bonef B; Alhassan AI; Mughal AJ; Azimah E; Samsudin MEA; De Mierry P; Nakamura S; Speck JS; DenBaars SP
    ACS Appl Mater Interfaces; 2017 Oct; 9(41):36417-36422. PubMed ID: 28960058
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN.
    Lee KJ; Oh S; Kim SJ; Yim SY; Myoung N; Lee K; Kim JS; Jung SH; Chung TH; Park SJ
    Nanotechnology; 2019 Oct; 30(41):415301. PubMed ID: 31300618
    [TBL] [Abstract][Full Text] [Related]  

  • 6. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.
    Zhou S; Liu X; Yan H; Gao Y; Xu H; Zhao J; Quan Z; Gui C; Liu S
    Sci Rep; 2018 Jul; 8(1):11053. PubMed ID: 30038360
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
    Jang J; Woo S; Min D; Nam O
    J Nanosci Nanotechnol; 2015 Mar; 15(3):1895-906. PubMed ID: 26413605
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes.
    Tawfik WZ; Bea SJ; Yang SB; Ryu SW; Lee JK
    J Nanosci Nanotechnol; 2015 Jul; 15(7):5140-3. PubMed ID: 26373092
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Composition fluctuation of in and well-width fluctuation in InGaN/GaN multiple quantum wells in light-emitting diode devices.
    Gu GH; Jang DH; Nam KB; Park CG
    Microsc Microanal; 2013 Aug; 19 Suppl 5():99-104. PubMed ID: 23920184
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes.
    Park AH; Seo TH; Chandramohan S; Lee GH; Min KH; Lee S; Kim MJ; Hwang YG; Suh EK
    Nanoscale; 2015 Oct; 7(37):15099-105. PubMed ID: 26351123
    [TBL] [Abstract][Full Text] [Related]  

  • 11. InGaN light emitting diodes with a laser-treated tapered GaN structure.
    Huang WC; Lin CF; Hsieh TH; Chen SH; Lin MS; Chen KT; Lin CM; Chen SH; Han P
    Opt Express; 2011 Sep; 19 Suppl 5():A1126-34. PubMed ID: 21935255
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes.
    Park AH; Chandramohan S; Seo TH; Lee GH; Min KH; Hong CH; Kim MJ; Suh EK
    Nanotechnology; 2016 Jul; 27(27):275602. PubMed ID: 27232210
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.
    Lee KJ; Chun J; Kim SJ; Oh S; Ha CS; Park JW; Lee SJ; Song JC; Baek JH; Park SJ
    Opt Express; 2016 Mar; 24(5):4391-4398. PubMed ID: 29092267
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates.
    Hwang SM; Song H; Seo YG; Son JS; Kim J; Baik KH
    Opt Express; 2011 Nov; 19(23):23036-41. PubMed ID: 22109183
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
    Jain B; Velpula RT; Thang Bui HQ; Nguyen HD; Lenka TR; Nguyen TK; Nguyen HPT
    Opt Express; 2020 Jan; 28(1):665-675. PubMed ID: 32118989
    [TBL] [Abstract][Full Text] [Related]  

  • 16. InGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer.
    Hsu WJ; Chen KT; Huang WC; Wu CJ; Dai JJ; Chen SH; Lin CF
    Opt Express; 2016 May; 24(11):11601-10. PubMed ID: 27410087
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes.
    Lee M; Lee HU; Song KM; Kim J
    Sci Rep; 2019 Jan; 9(1):970. PubMed ID: 30700809
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Semipolar (202̅1̅) GaN and InGaN Light-Emitting Diodes Grown on Sapphire.
    Song J; Choi J; Xiong K; Xie Y; Cha JJ; Han J
    ACS Appl Mater Interfaces; 2017 Apr; 9(16):14088-14092. PubMed ID: 28361536
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
    Zhao P; Zhao H
    Opt Express; 2012 Sep; 20 Suppl 5():A765-76. PubMed ID: 23037543
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Light-emitting-diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range.
    Bengoechea-Encabo A; Albert S; Lopez-Romero D; Lefebvre P; Barbagini F; Torres-Pardo A; Gonzalez-Calbet JM; Sanchez-Garcia MA; Calleja E
    Nanotechnology; 2014 Oct; 25(43):435203. PubMed ID: 25297338
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 20.