These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
4. Conduction- and valence-band offsets at the hydrogenated amorphous silicon-carbon/crystalline silicon interface via capacitance techniques. Essick JM; Nobel Z; Li YM; Bennett MS Phys Rev B Condens Matter; 1996 Aug; 54(7):4885-4890. PubMed ID: 9986449 [No Abstract] [Full Text] [Related]
5. Light-induced change in defect-band photoluminescence of doped hydrogenated amorphous silicon. Qiu C; Pankove JI Phys Rev B Condens Matter; 1990 Jun; 41(18):12744-12749. PubMed ID: 9993751 [No Abstract] [Full Text] [Related]
6. Direct role of hydrogen in the Staebler-Wronski effect in hydrogenated amorphous silicon. Su T; Taylor PC; Ganguly G; Carlson DE Phys Rev Lett; 2002 Jul; 89(1):015502. PubMed ID: 12097051 [TBL] [Abstract][Full Text] [Related]
7. Light-induced defect densities in hydrogenated and deuterated amorphous silicon deposited at different substrate temperatures. Ganguly G; Matsuda A Phys Rev B Condens Matter; 1994 Apr; 49(16):10986-10990. PubMed ID: 10009941 [No Abstract] [Full Text] [Related]
8. Effect of non-Ohmic back contacts in capacitance transient measurements on hydrogenated amorphous silicon. Jackson WB; Johnson NM Phys Rev B Condens Matter; 1995 Jul; 52(4):R2233-R2236. PubMed ID: 9981379 [No Abstract] [Full Text] [Related]
9. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen. Jackson WB; Moyer MD Phys Rev B Condens Matter; 1987 Oct; 36(11):6217-6220. PubMed ID: 9942322 [No Abstract] [Full Text] [Related]
10. Photoconductive analysis of defect density of hydrogenated amorphous silicon during room-temperature plasma posthydrogenation, light soaking, and thermal annealing. Conde JP; Gonçalves M; Brogueira P; Schotten V; Chu V Phys Rev B Condens Matter; 1996 Jan; 53(4):1886-1890. PubMed ID: 9983647 [No Abstract] [Full Text] [Related]
11. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires. Yu L; O'Donnell B; Foldyna M; Roca i Cabarrocas P Nanotechnology; 2012 May; 23(19):194011. PubMed ID: 22539188 [TBL] [Abstract][Full Text] [Related]
12. Photoaddressed spatial light modulator using transmissive and highly photosensitive amorphous-silicon carbide film. Akiyama K; Takimoto A; Ogawa H Appl Opt; 1993 Nov; 32(32):6493-500. PubMed ID: 20856489 [TBL] [Abstract][Full Text] [Related]
13. 29Si nuclear magnetic resonance of amorphous hydrogenated silicon and amorphous microcrystalline mixed-phase hydrogenated silicon. Hayashi S; Hayamizu K; Yamasaki S; Matsuda A; Tanaka K Phys Rev B Condens Matter; 1987 Apr; 35(10):4581-4590. PubMed ID: 9940627 [No Abstract] [Full Text] [Related]
14. In situ thickness control during plasma deposition of hydrogenated amorphous silicon films by time-resolved microwave conductivity measurements. Neitzert HC; Hirsch W; Kunst M; Nell ME Appl Opt; 1995 Feb; 34(4):676-80. PubMed ID: 20963168 [TBL] [Abstract][Full Text] [Related]
15. Thermal relaxation of the deposition-induced nonequilibrium state and steady-state defect density in hydrogenated amorphous silicon. Yoon JH; Lee YZ; Park HR Phys Rev B Condens Matter; 1994 Apr; 49(15):10303-10306. PubMed ID: 10009850 [No Abstract] [Full Text] [Related]
16. Measured and calculated distributions of deep defect states in hydrogenated amorphous silicon: Verification of deep defect relaxation dynamics. Zhong F; Cohen JD Phys Rev Lett; 1993 Jul; 71(4):597-600. PubMed ID: 10055316 [No Abstract] [Full Text] [Related]