These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

106 related articles for article (PubMed ID: 9945080)

  • 1. Strain-induced conduction-band nonparabolicity of GaAs-GaAs1-xPx superlattices.
    Brown LD; Jaros M
    Phys Rev B Condens Matter; 1988 Mar; 37(8):4306-4309. PubMed ID: 9945080
    [No Abstract]   [Full Text] [Related]  

  • 2. Quantum-well structures of direct-band-gap GaAs1-xPx/GaAs studied by photoluminescence and Raman spectroscopy.
    Pistol M; Liu X
    Phys Rev B Condens Matter; 1992 Feb; 45(8):4312-4319. PubMed ID: 10002048
    [No Abstract]   [Full Text] [Related]  

  • 3. Momentum-mixing-induced enhancement of band nonparabolicity in GaAs-Ga1-xAlxAs superlattices.
    Brown LD; Jaros M; Ninno D
    Phys Rev B Condens Matter; 1987 Aug; 36(5):2935-2937. PubMed ID: 9943193
    [No Abstract]   [Full Text] [Related]  

  • 4. Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors.
    Takeda K; Matsumoto N; Taguchi A; Taki H; Ohta E; Sakata M
    Phys Rev B Condens Matter; 1985 Jul; 32(2):1101-1111. PubMed ID: 9937122
    [No Abstract]   [Full Text] [Related]  

  • 5. Electron-spin polarization in photoemission from strained GaAs grown on GaAs1-xPx.
    Maruyama T; Garwin EL; Prepost R; Zapalac GH
    Phys Rev B Condens Matter; 1992 Aug; 46(7):4261-4264. PubMed ID: 10004161
    [No Abstract]   [Full Text] [Related]  

  • 6. High-pressure photoluminescence study of GaAs/GaAs1-xPx strained multiple quantum wells.
    Shan W; Hwang SJ; Song JJ; Hou HQ; Tu CW
    Phys Rev B Condens Matter; 1993 Feb; 47(7):3765-3770. PubMed ID: 10006480
    [No Abstract]   [Full Text] [Related]  

  • 7. Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs(1-y)Sb(y) with Tunable Antimony Composition.
    Liu JS; Clavel M; Hudait MK
    ACS Appl Mater Interfaces; 2015 Dec; 7(51):28624-31. PubMed ID: 26642121
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Photoluminescence study of localization effects induced by the fluctuating random alloy potential in indirect band-gap GaAs1-xPx.
    Oueslati M; Zouaghi M; Pistol ME; Samuelson L; Grimmeiss HG; Balkanski M
    Phys Rev B Condens Matter; 1985 Dec; 32(12):8220-8227. PubMed ID: 9937002
    [No Abstract]   [Full Text] [Related]  

  • 9. Electron effective mass in direct-band-gap GaAs1-xPx alloys.
    Wetzel C; Meyer BK; Omling P
    Phys Rev B Condens Matter; 1993 Jun; 47(23):15588-15592. PubMed ID: 10005950
    [No Abstract]   [Full Text] [Related]  

  • 10. Nonparabolicity of the conduction band in GaAs.
    Ruf T; Cardona M
    Phys Rev B Condens Matter; 1990 May; 41(15):10747-10753. PubMed ID: 9993485
    [No Abstract]   [Full Text] [Related]  

  • 11. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures.
    Mazur YI; Dorogan VG; de Souza LD; Fan D; Benamara M; Schmidbauer M; Ware ME; Tarasov GG; Yu SQ; Marques GE; Salamo GJ
    Nanotechnology; 2014 Jan; 25(3):035702. PubMed ID: 24346504
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Identity of the conduction-band minimum in (AlAs)1/(GaAs)1 (001) superlattices: Intermixing-induced reversal of states.
    Laks DB; Zunger A
    Phys Rev B Condens Matter; 1992 May; 45(19):11411-11414. PubMed ID: 10001083
    [No Abstract]   [Full Text] [Related]  

  • 13. Resonant Raman scattering in mixed GaAs1-xPx crystals.
    Jain KP; Soni RK; Abbi SC
    Phys Rev B Condens Matter; 1985 May; 31(10):6820-6823. PubMed ID: 9935575
    [No Abstract]   [Full Text] [Related]  

  • 14. Random-Alloy splitting of Cu levels in GaAs1-xPx.
    Mariette H; Mbaye AA
    Phys Rev Lett; 1985 Feb; 54(8):848. PubMed ID: 10031633
    [No Abstract]   [Full Text] [Related]  

  • 15. Effect of alloy disorder on the deep levels produced by the anion vacancy in GaAs1-xPx.
    Tang SA; Myles CW; Ford WC
    Phys Rev B Condens Matter; 1989 Dec; 40(17):11947-11950. PubMed ID: 9991807
    [No Abstract]   [Full Text] [Related]  

  • 16. Resonant Raman scattering on localized states due to disorder in GaAs1-xPx alloys.
    Oueslati M; Benoit C; Zouaghi M
    Phys Rev B Condens Matter; 1988 Feb; 37(6):3037-3041. PubMed ID: 9944881
    [No Abstract]   [Full Text] [Related]  

  • 17. Properties of the EL2 level in GaAs1-xPx.
    Samuelson L; Omling P
    Phys Rev B Condens Matter; 1986 Oct; 34(8):5603-5609. PubMed ID: 9940395
    [No Abstract]   [Full Text] [Related]  

  • 18. Hot-electron luminescence and polarization in GaAs1-xPx alloys.
    Charfi FF; Zouaghi M; Planel R; Benoit C; Guillaume l
    Phys Rev B Condens Matter; 1986 Apr; 33(8):5623-5632. PubMed ID: 9939072
    [No Abstract]   [Full Text] [Related]  

  • 19. Thermally activated exciton transfer in GaAs1-xPx.
    Kash JA; Mariette H; Wolford DJ
    Phys Rev B Condens Matter; 1985 Sep; 32(6):3753-3757. PubMed ID: 9937524
    [No Abstract]   [Full Text] [Related]  

  • 20. Exciton transfer at low temperature in GaxIn1-xP:N and GaAs1-xPx:N.
    Mariette H; Kash JA; Wolford DJ; Marbeuf A
    Phys Rev B Condens Matter; 1985 Apr; 31(8):5217-5222. PubMed ID: 9936483
    [No Abstract]   [Full Text] [Related]  

    [Next]    [New Search]
    of 6.