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9. Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells. Arnaud G; Allègre J; Lefebvre P; Mathieu H; Howard LK; Dunstan DJ Phys Rev B Condens Matter; 1992 Dec; 46(23):15290-15301. PubMed ID: 10003646 [No Abstract] [Full Text] [Related]
10. Concentration-dependent band offset in InxGa1-xAs/GaAs strained quantum wells. Joyce MJ; Johnson MJ; Gal M; Usher BF Phys Rev B Condens Matter; 1988 Nov; 38(15):10978-10980. PubMed ID: 9945972 [No Abstract] [Full Text] [Related]
11. Hydrostatic pressure coefficients of the photoluminescence of InxGa1-xAs/GaAs strained-layer quantum wells. Wilkinson VA; Prins AD; Lambkin JD; O'Reilly EP; Dunstan DJ; Howard LK; Emeny MT Phys Rev B Condens Matter; 1990 Aug; 42(5):3113-3119. PubMed ID: 9995808 [No Abstract] [Full Text] [Related]
12. Photoluminescence studies of InxGa1-xAs/GaAs strained quantum wells under hydrostatic pressure. Li GH; Zheng BZ; Han HX; Wang ZP; Andersson TG; Chen ZG Phys Rev B Condens Matter; 1992 Feb; 45(7):3489-3493. PubMed ID: 10001925 [No Abstract] [Full Text] [Related]
13. Influence of barrier height on carrier dynamics in strained InxGa1-xAs/GaAs quantum wells. Bacher G; Schweizer H; Kovac J; Forchel A; Nickel H; Schlapp W; Lösch R Phys Rev B Condens Matter; 1991 Apr; 43(11):9312-9315. PubMed ID: 9996615 [No Abstract] [Full Text] [Related]
14. Theoretical and experimental investigations of the electronic structure for selectively delta -doped strained InxGa1-xAs/GaAs quantum wells. Ke Ml; Westwood D; Williams RH; Godfrey MJ Phys Rev B Condens Matter; 1995 Feb; 51(8):5038-5042. PubMed ID: 9979377 [No Abstract] [Full Text] [Related]
15. Magnetoluminescence study of many-body effects in a dense electron-hole plasma of strained InxGa1-xAs/GaAs quantum wells. Butov LV; Egorov VD; Kulakovskii VD; Andersson TG Phys Rev B Condens Matter; 1992 Dec; 46(23):15156-15162. PubMed ID: 10003630 [No Abstract] [Full Text] [Related]
16. Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells. Reynolds DC; Evans KR; Stutz CE; Yu PW Phys Rev B Condens Matter; 1991 Feb; 43(5):4244-4248. PubMed ID: 9997775 [No Abstract] [Full Text] [Related]
17. Influence of the kinetic energy of electrons on the formation of excitons in a shallow InxGa1-xAs/GaAs quantum well. Kovac J; Schweizer H; Pilkuhn MH; Nickel H Phys Rev B Condens Matter; 1996 Nov; 54(19):13440-13443. PubMed ID: 9985242 [No Abstract] [Full Text] [Related]
18. Effects of an electric field on the continuum energy levels in InxGa1-xAs/GaAs quantum wells terminated with thin cap layers. Fafard S; Fortin E; Roth AP Phys Rev B Condens Matter; 1993 Apr; 47(16):10588-10595. PubMed ID: 10005172 [No Abstract] [Full Text] [Related]
19. Direct coupling of heavy-hole free excitons in InxGa1-xAs/GaAs quantum wells with free excitons in the GaAs barrier. Reynolds DC; Evans KR; Bajaj KK; Jogai B; Stutz CE; Yu PW Phys Rev B Condens Matter; 1991 Jan; 43(2):1871-1874. PubMed ID: 9997454 [No Abstract] [Full Text] [Related]
20. Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wells. Holtz PO; Zhao QX; Ferreira AC; Monemar B; Sundaram M; Merz JL; Gossard AC Phys Rev B Condens Matter; 1993 Sep; 48(12):8872-8877. PubMed ID: 10007105 [No Abstract] [Full Text] [Related] [Next] [New Search]